Stefano Gariglio

Electric field control of the LaAlO3/SrTiO3 interface ground state

Interfaces between complex oxides are emerging as one of the most interesting systems in condensed matter physics. In this special setting, in which translational symmetry is artificially broken, a variety of new and unusual electronic phases can be promoted. Theoretical studies predict complex phase diagrams and suggest the key role of the charge carrier density in determining the systems’ ground states. A particularly fascinating system is the conducting interface between the band insulators LaAlO3 and SrTiO3 (ref. 3). Recently two possible ground states have been experimentally identified: a magnetic state and a two-dimensional superconducting condensate. Here we use the electric field effect to explore the phase diagram of the system. The electrostatic tuning of the carrier density allows an on/off switching of superconductivity and drives a quantum phase transition between a two-dimensional superconducting state and an insulating state. Analyses of the magnetotransport properties in the insulating state are consistent with weak localization and do not provide evidence for magnetism. The electric field control of superconductivity demonstrated here opens the way to the development of new mesoscopic superconducting circuits.

Improper ferroelectricity in perovskite oxide artificial superlattices

Ferroelectric thin films and superlattices are currently the subject of intensive research because of the interest they raise for technological applications and also because their properties are of fundamental scientific importance. Ferroelectric superlattices allow the tuning of the ferroelectric properties while maintaining perfect crystal structure and a coherent strain, even throughout relatively thick samples. This tuning is achieved in practice by adjusting both the strain, to enhance the polarization, and the composition, to interpolate between the properties of the combined compounds. Here we show that superlattices with very short periods possess a new form of interface coupling, based on rotational distortions, which gives rise to ‘improper’ ferroelectricity. These observations suggest an approach, based on interface engineering, to produce artificial materials with unique properties. By considering ferroelectric/paraelectric PbTiO3/SrTiO3 multilayers, we first show from first principles that the ground-state of the system is not purely ferroelectric but also primarily involves antiferrodistortive rotations of the oxygen atoms in a way compatible with improper ferroelectricity. We then demonstrate experimentally that, in contrast to pure PbTiO3 and SrTiO3 compounds, the multilayer system indeed behaves like a prototypical improper ferroelectric and exhibits a very large dielectric constant of εr ≈ 600, which is also fairly temperature-independent. This behaviour, of practical interest for technological applications, is distinct from that of normal ferroelectrics, for which the dielectric constant is typically large but strongly evolves around the phase transition temperature and also differs from that of previously known improper ferroelectrics that exhibit a temperature-independent but small dielectric constant only.

Tunable Rashba spin-orbit interaction at oxide interfaces.

The quasi-two-dimensional electron gas found at the LaAlO{3}/SrTiO{3} interface offers exciting new functionalities, such as tunable superconductivity, and has been proposed as a new nanoelectronics fabrication platform. Here we lay out a new example of an electronic property arising from the interfacial breaking of inversion symmetry, namely, a large Rashba spin-orbit interaction, whose magnitude can be modulated by the application of an external electric field. By means of magnetotransport experiments we explore the evolution of the spin-orbit coupling across the phase diagram of the system. We uncover a steep rise in Rashba interaction occurring around the doping level where a quantum critical point separates the insulating and superconducting ground states of the system.

Conduction at Domain Walls in Insulating Pb(Zr0.2Ti0.8)O3 Thin Films

Domain wall conduction in insulating Pb(Zr(0.2) Ti(0.8))O(3) thin films is demonstrated. The observed electrical conduction currents can be clearly differentiated from displacement currents associated with ferroelectric polarization switching. The domain wall conduction, nonlinear and highly asymmetric due to the specific local probe measurement geometry, shows thermal activation at high temperatures, and high stability over time.

Metal-insulator transition in ultrathin LaNiO3 films.

Transport in ultrathin films of LaNiO(3) evolves from a metallic to a strongly localized character as the films thickness is reduced and the sheet resistance reaches a value close to h/e(2), the quantum of resistance in two dimensions. In the intermediate regime, quantum corrections to the Drude low-temperature conductivity are observed; they are accurately described by weak localization theory. Remarkably, the negative magnetoresistance in this regime is isotropic, which points to magnetic scattering associated with the proximity of the system to either a spin-glass state or the charge ordered antiferromagnetic state observed in other rare earth nickelates.

Two-dimensional quantum oscillations of the conductance at LaAlO3/SrTiO3 interfaces.

We report on a study of magnetotransport in LaAlO3 /SrTiO3 interfaces characterized by mobilities of the order of several thousands cm2/V s. We observe Shubnikov-de Haas oscillations whose period depends only on the perpendicular component of the magnetic field. This observation directly indicates the formation of a two-dimensional electron gas originating from quantum confinement at the interface. From the temperature dependence of the oscillation amplitude we extract an effective carrier mass m* ≃ 1.45 m(e). An electric field applied in the back-gate geometry increases the mobility, the carrier density, and the oscillation frequency.

Origin of Interface Magnetism in BiMnO_{3}/SrTiO_{3} and LaAlO_{3}/SrTiO_{3} Heterostructures

Possible ferromagnetism induced in otherwise nonmagnetic materials has been motivating intense research in complex oxide heterostructures. Here we show that a confined magnetism is realized at the interface between SrTiO3 and two insulating polar oxides, BiMnO3 and LaAlO3. By using polarization dependent x-ray absorption spectroscopy, we find that in both cases the magnetism can be stabilized by a negative exchange interaction between the electrons transferred to the interface and local magnetic moments. These local magnetic moments are associated with magnetic Ti3+ ions at the interface itself for LaAlO3/SrTiO3 and to Mn3+ ions in the overlayer for BiMnO3/SrTiO3. In LaAlO3/SrTiO3 the induced magnetism is quenched by annealing in oxygen, suggesting a decisive role of oxygen vacancies in this phenomenon.

Influence of the growth conditions on the LaAIO3/SrTiO3 interface electronic properties

The effects of oxygen pressure during the growth of LaAlO3 on (001) SrTiO3, and of post-deposition annealing were investigated. While little influence on the structure was observed, the transport properties were found to depend on both growth pressure and annealing. For LaAlO3 layer thicknesses between 5 and 10 unit cells and growth pressures between 10− 4 and 10−2 mbar, the LaAlO3/SrTiO3 interfaces displayed similar metallic behavior with a sharp transition to a superconducting state. At an oxygen pressure of 10− 6 mbar oxygen vacancies were clearly introduced and extended deep into the SrTiO3 crystal. These vacancies could be removed by post-deposition annealing in 0.2 bar of O2 at ~530 °C. At a growth pressure of 10− 4 mbar, the electronic properties of samples with ultra-thin LaAlO3 layers (2 to 3 unit cells thick) were found to depend markedly on the post-annealing step.

The realization and performance of vibration energy harvesting MEMS devices based on an epitaxial piezoelectric thin film

This paper focuses on the fabrication and evaluation of vibration energy harvesting devices by utilizing an epitaxial Pb(Zr0.2Ti0.8)O3 (PZT) thin film. The high quality of the c-axis oriented PZT layer results in a high piezoelectric coefficient and a low dielectric constant, which are key parameters for realizing high performance piezoelectric energy harvesters. Different cantilever structures, with and without a Si proof mass, are realized using micro-patterning techniques optimized for the epitaxial oxide layers, to maintain the piezoelectric properties throughout the process. The characteristics and the energy harvesting performances of the fabricated devices are experimentally investigated and compared against analytical calculations. The optimized device based on a 0.5 µm thick epitaxial PZT film, a cantilever beam of 1 mm × 2.5 mm × 0.015 mm, with a Si proof mass of 1 mm × 0.5 mm × 0.23 mm, generates an output power, current and voltage of, respectively, 13 µW g − 2, 48 µA g − 1 and 0.27 V g − 1 (g = 9.81 m s − 2) at the resonant frequency of 2.3 kHz for an optimal resistive load of 5.6 kΩ. The epitaxial PZT harvester exhibits higher power and current with usable voltage, while maintaining lower optimal resistive load as compared with other examples present in the literature. These results indicate the potential of epitaxial PZT thin films for the improvement of the performances of energy harvesting devices.

Tunable conductivity threshold at polar oxide interfaces

The physical mechanisms responsible for the formation of a two-dimensional electron gas at the interface between insulating SrTiO(3) and LaAlO(3) have remained a contentious subject since its discovery in 2004. Opinion is divided between an intrinsic mechanism involving the build-up of an internal electric potential due to the polar discontinuity at the interface between SrTiO(3) and LaAlO(3), and extrinsic mechanisms attributed to structural imperfections. Here we show that interface conductivity is also exhibited when the LaAlO(3) layer is diluted with SrTiO(3), and that the threshold thickness required to show conductivity scales inversely with the fraction of LaAlO(3) in this solid solution, and thereby also with the layers formal polarization. These results can be best described in terms of the intrinsic polar-catastrophe model, hence providing the most compelling evidence, to date, in favour of this mechanism.