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Dive into the research topics where Pini Shekhter is active.

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Featured researches published by Pini Shekhter.


Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena | 2013

Epitaxial NiInGaAs formed by solid state reaction on In0.53Ga0.47As: Structural and chemical study

Pini Shekhter; Shlomo Mehari; Dan Ritter; M. Eizenberg

Thin epitaxial layers of NiInGaAs formed by solid state reaction of Ni on (100) In0.53Ga0.47As are used as metal source and drain regions for In0.53Ga0.47As metal oxide field effect transistors. Here, the authors present a structural and chemical analysis of this phase. The stoichiometry of the layer was determined as Ni2In0.53Ga0.47As. Transmission electron microscopy revealed an abrupt interface and a detailed x-ray diffraction analysis showed that the layer is of a hexagonal lattice, which grows epitaxially with the orientation relations of {100}InGaAs||{100}NiInGaAs; ⟨011¯⟩InGaAs||[001]NiInGaAs. Only one domain can be observed in this epitaxial growth. Understanding the structure of these layers is a crucial step not only in their incorporation into InGaAs based devices but also a step toward novel devices.


Applied Physics Letters | 2011

Effect of H on interface properties of Al2O3/In0.53Ga0.47As

Zuoguang Liu; Sharon Cui; Pini Shekhter; Xiao Sun; Lior Kornblum; Jie Yang; M. Eizenberg; K. S. Chang-Liao; T. P. Ma

We report that depositing Al2O3 on InGaAs in an H-containing ambient (e.g., in forming gas) results in significant reduction of interface-trap density and significantly suppressed frequency dispersion of accumulation capacitance. The results of the inelastic electron tunneling spectroscopy study reveal that strong trap features at the Al2O3/InGaAs interface in the InGaAs band gap are largely removed by depositing Al2O3 in an H-containing ambient. Transmission electron microscopy images and x-ray photoelectron spectroscopy data shed some light on the role of hydrogen in improving interface properties of the Al2O3/In0.53Ga0.47As gate stack.


Applied Physics Letters | 2012

Measurement of the Schottky barrier height between Ni-InGaAs alloy and In0.53Ga0.47As

Shlomo Mehari; Arkady Gavrilov; Shimon Cohen; Pini Shekhter; M. Eizenberg; Dan Ritter

The temperature dependence of the current-voltage characteristics of Ni-InGaAs alloy Schottky contacts to n-In0.53Ga0.47As was measured. Nearly ideal plots with an ideality factor close to unity were obtained. The Arrhenius curve across the wide temperature range of 80–300 K was perfectly linear, yielding a barrier height of 0.239 ± 0.01 eV. This value is substantially larger than previously reported. Conventional metal based Schottky diodes did not exhibit an ideal Schottky behavior. The ideal Schottky diode characteristics are attributed to the lack of oxidation and contamination of the interface between Ni-InGaAs and InGaAs.


ACS Applied Materials & Interfaces | 2016

Effects of Titanium Layer Oxygen Scavenging on the High-k/InGaAs Interface

Roy Winter; Pini Shekhter; Kechao Tang; Luca Floreano; Alberto Verdini; Paul C. McIntyre; M. Eizenberg

One of the main challenges in the path to incorporating InGaAs based metal-oxide-semiconductor structures in nanoelectronics is the passivation of high-k/InGaAs interfaces. Here, the oxygen scavenging effect of thin Ti layers on high-k/InGaAs gate stacks was studied. Electrical measurements and synchrotron X-ray photoelectron spectroscopy measurements, with in situ metal deposition, were used. Oxygen removal from the InGaAs native oxide surface layer remotely through interposed Al2O3 and HfO2 layers observed. Synchrotron X-ray photoelectron spectroscopy has revealed a decrease in the intensity of InOx features relative to In in InGaAs after Ti deposition. The signal ratio decreases further after annealing. In addition, Ti 2p spectra clearly show oxidation of the thin Ti layer in the ultrahigh vacuum XPS environment. Using capacitance-voltage and conductance-voltage measurements, Pt/Ti/Al2O3/InGaAs and Pt/Al2O3/InGaAs capacitors were characterized both before and after annealing. It was found that the remote oxygen scavenging from the oxide/semiconductor interface using a thin Ti layer can influence the density of interface traps in the high-k/InGaAs interface.


Applied Physics Letters | 2014

The influence of carbon doping on the performance of Gd2O3 as high-k gate dielectric

Pini Shekhter; Ayan Roy Chaudhuri; Apurba Laha; S. Yehezkel; A. Shriki; H. J. Osten; M. Eizenberg

One of the approaches for overcoming the issue of leakage current in modern metal-oxide-semiconductor devices is utilizing the high dielectric constants of lanthanide based oxides. We investigated the effect of carbon doping directly into Gd2O3 layers on the performance of such devices. It was found that the amount of carbon introduced into the dielectric is above the solubility limit; carbon atoms enrich the oxide-semiconductor interface and cause a significant shift in the flat band voltage of the stack. Although the carbon atoms slightly degrade this interface, this method has a potential for tuning the flat band voltage of such structures.


Applied Physics Letters | 2012

Strain-induced effects on the dielectric constant for thin, crystalline rare earth oxides on silicon

D. Schwendt; H. J. Osten; Pini Shekhter; M. Eizenberg

Thin epitaxial rare earth oxide layers on Si exhibit K values that are much larger than the known bulk values. We investigate the thickness dependence of that enhancement effect for epitaxial Gd2O3 on Si(111). Controlling the oxide composition in ternary (Gd1-xNdx)2O3 thin films enables us to tune the lattice mismatch to silicon and thus the K values of the dielectric layer from 13 (close to the bulk value) up to 20. We show that simple tetragonal distortion of the cubic lattice is not sufficient to explain the enhancement in K. Therefore, we propose more severe strain induced structural phase deformations.


Applied Physics Letters | 2011

Effect of hydrogen on the chemical bonding and band structure at the Al2O3/In0.53Ga0.47As interface

Pini Shekhter; Lior Kornblum; Zuoguang Liu; Sharon Cui; T. P. Ma; M. Eizenberg

Surface passivation of high mobility semiconductors such as InGaAs is a crucial bottleneck towards their integration in metal-oxide-semiconductor devices. The chemical structure and band offsets of InGaAs-Al2O3 with different passivations were investigated by x-ray photoelectron spectroscopy. Pre-deposition forming gas plasma treatment is shown to significantly improve the chemistry of S-passivated InGaAs surface, on which the Al2O3 is deposited by the molecular atomic deposition technique. Moreover, the change in the surface chemistry was found to correlate with a difference of 0.8 eV in the band offsets at the interface. This may offer insights on Fermi level pinning in such systems.


Applied Physics Letters | 2015

Characteristics of the dynamics of breakdown filaments in Al2O3/InGaAs stacks

Felix Palumbo; Pini Shekhter; K. Cohen Weinfeld; M. Eizenberg

In this paper, the Al2O3/InGaAs interface was studied by X-ray photoelectron spectroscopy (XPS) after a breakdown (BD) event at positive bias applied to the gate contact. The dynamics of the BD event were studied by comparable XPS measurements with different current compliance levels during the BD event. The overall results show that indium atoms from the substrate move towards the oxide by an electro-migration process and oxidize upon arrival following a power law dependence on the current compliance of the BD event. Such a result reveals the physical feature of the breakdown characteristics of III-V based metal-oxide-semiconductor devices.


Applied Physics Letters | 2014

X ray photoelectron analysis of oxide-semiconductor interface after breakdown in Al2O3/InGaAs stacks

Pini Shekhter; Felix Palumbo; K. Cohen Weinfeld; M. Eizenberg

In this work, the post-breakdown characteristics of metal gate/Al2O3/InGaAs structures were studied using surface analysis by x ray photoelectron spectroscopy. The results show that for dielectric breakdown under positive bias, localized filaments consisting of oxidized substrate atoms (In, Ga and As) were formed, while following breakdown under negative bias, a decrease of oxidized substrate atoms was observed. Such differences in the microstructure at the oxide-semiconductor interface after breakdown for positive and negative voltages are explained by atomic diffusion of the contact atoms into the gate dielectric in the region of the breakdown spot by the current induced electro-migration effect. These findings show a major difference between Al2O3/InGaAs and SiO2/Si interfaces, opening the way to a better understanding of the breakdown characteristics of III-V complementary-metal-oxide-semiconductor technology.


Journal of Applied Physics | 2016

Strain-induced phase variation and dielectric constant enhancement of epitaxial Gd2O3

Pini Shekhter; D. Schwendt; Yaron Amouyal; T. F. Wietler; H. J. Osten; M. Eizenberg

One of the approaches for realizing advanced high k insulators for metal oxide semiconductor field effect transistors based devices is the use of rare earth oxides. When these oxides are deposited as epitaxial thin films, they demonstrate dielectric properties that differ greatly from those that are known for bulk oxides. Using structural and spectroscopic techniques, as well as first-principles calculations, Gd2O3 films deposited on Si (111) and Ge (111) were characterized. It was seen that the same 4 nm thick film, grown simultaneously on Ge and Si, presents an unstrained lattice on Ge while showing a metastable phase on Si. This change from the cubic lattice to the distorted metastable phase is characterized by an increase in the dielectric constant of more than 30% and a change in band gap. The case in study shows that extreme structural changes can occur in ultra-thin epitaxial rare earth oxide films and modify their dielectric properties when the underlying substrate is altered.

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M. Eizenberg

Technion – Israel Institute of Technology

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Dan Ritter

Technion – Israel Institute of Technology

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Yaron Amouyal

Technion – Israel Institute of Technology

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Félix Roberto Mario Palumbo

Technion – Israel Institute of Technology

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K. Cohen Weinfeld

Technion – Israel Institute of Technology

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Roy Winter

Technion – Israel Institute of Technology

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Shlomo Mehari

Technion – Israel Institute of Technology

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