Po-Chun Yeh

Optical Third-Harmonic Generation in Graphene

We report strong third-harmonic generation in monolayer graphene grown by chemical vapor deposition and transferred to an amorphous silica (glass) substrate; the photon energy is in threephoton resonance with the exciton-shifted van Hove singularity at the M point of graphene. The polarization selection rules are derived and experimentally verified. In addition, our polarization- and azimuthal-rotation-dependent third-harmonic-generation measurements reveal in-plane isotropy as well as anisotropy between the in-plane and out-of-plane nonlinear optical responses of graphene. Since the third-harmonic signal exceeds that from bulk glass by more than 2 orders of magnitude, the signal contrast permits background-free scanning of graphene and provides insight into the structural properties of graphene.

Direct Measurement of the Tunable Electronic Structure of Bilayer MoS2 by Interlayer Twist

Using angle-resolved photoemission on micrometer-scale sample areas, we directly measure the interlayer twist angle-dependent electronic band structure of bilayer molybdenum-disulfide (MoS2). Our measurements, performed on arbitrarily stacked bilayer MoS2 flakes prepared by chemical vapor deposition, provide direct evidence for a downshift of the quasiparticle energy of the valence band at the Brillouin zone center (Γ̅ point) with the interlayer twist angle, up to a maximum of 120 meV at a twist angle of ∼40°. Our direct measurements of the valence band structure enable the extraction of the hole effective mass as a function of the interlayer twist angle. While our results at Γ̅ agree with recently published photoluminescence data, our measurements of the quasiparticle spectrum over the full 2D Brillouin zone reveal a richer and more complicated change in the electronic structure than previously theoretically predicted. The electronic structure measurements reported here, including the evolution of the effective mass with twist-angle, provide new insight into the physics of twisted transition-metal dichalcogenide bilayers and serve as a guide for the practical design of MoS2 optoelectronic and spin-/valley-tronic devices.

Tuning the electronic structure of monolayer graphene/ Mo S 2 van der Waals heterostructures via interlayer twist

We directly measure the electronic structure of twisted graphene/MoS2 van der Waals heterostructures, in which both graphene and MoS2 are monolayers. We use cathode lens microscopy and microprobe angle-resolved photoemission spectroscopy measurements to image the surface, determine twist angle, and map the electronic structure of these artificial heterostructures. For monolayer graphene on monolayer MoS2, the resulting band structure reveals the absence of hybridization between the graphene and MoS2 electronic states. Further, the graphene-derived electronic structure in the heterostructures remains intact, irrespective of the twist angle between the two materials. In contrast, however, the electronic structure associated with the MoS2 layer is found to be twist-angle dependent; in particular, the relative difference in the energy of the valence band maximum at {\Gamma} and K of the MoS2 layer varies from approximately 0 to 0.2 eV. Our results suggest that monolayer MoS2 within the heterostructure becomes predominantly an indirect bandgap system for all twist angles except in the proximity of 30 degrees. This result enables potential bandgap engineering in van der Waals heterostructures comprised of monolayer structures.

Quasiparticle interference, quasiparticle interactions, and the origin of the charge density wave in 2H–NbSe2

We show that a small number of intentionally introduced defects can be used as a spectroscopic tool to amplify quasiparticle interference in 2H-NbSe2 that we measure by scanning tunneling spectroscopic imaging. We show, from the momentum and energy dependence of the quasiparticle interference, that Fermi surface nesting is inconsequential to charge density wave formation in 2H-NbSe2. We demonstrate that, by combining quasiparticle interference data with additional knowledge of the quasiparticle band structure from angle resolved photoemission measurements, one can extract the wave vector and energy dependence of the important electronic scattering processes thereby obtaining direct information both about the fermiology and the interactions. In 2H-NbSe2, we use this combination to confirm that the important near-Fermi-surface electronic physics is dominated by the coupling of the quasiparticles to soft mode phonons at a wave vector different from the charge density wave ordering wave vector.

Trapping surface electrons on graphene layers and islands

(Received 9 September 2011; revised manuscript received 26 January 2012; published 13 February 2012)We report the use of time- and angle-resolved two-photon photoemission to map the bound, unoccupiedelectronic structure of the weakly coupled graphene/Ir(111) system. The energy, dispersion, and lifetime of thelowest three image-potential states are measured. In addition, the weak interaction between Ir and graphenepermits observation of resonant transitions from an unquenched Shockley-type surface state of the Ir substrateto graphene/Ir image-potential states. The image-potential-state lifetimes are comparable to those of midgapclean metal surfaces. Evidence of localization of the excited electrons on single-atom-layer graphene islands isprovided by coverage-dependent measurements.DOI: 10.1103/PhysRevB.85.081402 PACS number(s): 73

Interfacial Dipole Formation and Surface-Electron Confinement in Low-Coverage Self-Assembled Thiol Layers: Thiophenol and p-Fluorothiophenol on Cu(111)

Model systems of organic self-assembled monolayers are important in achieving full atomic-scale understanding of molecular-electronic interfaces as well as the details of their charge transfer physics. Here we use two-photon photoemission to measure the evolving unoccupied and occupied interfacial electronic structure of two thiolate species, thiophenol and p-fluorothiophenol, adsorbed on Cu(111) as a function of molecular coverage. Our measurements focus on the role of adsorbates in shifting surface polarization and effecting surface electron confinement. As the coverage of each molecule increases, their photoemission-measured work functions exhibit nearly identical behavior up to 0.4-0.5 ML, at which point their behavior diverges; this behavior can be fit to an interfacial bond model for the surface dipole. In addition, our results show the emergence of an interfacial electronic state 0.1-0.2 eV below the Fermi level. This electronic state is attributed to quantum-mechanical-confinement shifting of the Cu(111) surface state by the molecular adsorbates.