Pradeep Senanayake

Hybrid conjugated polymer solar cells using patterned GaAs nanopillars

In this work, we study hybrid solar cells based on poly(3-hexylthiophene)-coated GaAs nanopillars grown on a patterned GaAs substrate using selective-area metal organic chemical vapor deposition. The hybrid solar cells show extremely low leakage currents (I≅45 nA @−1V) under dark conditions and an open circuit voltage, short circuit current density, and fill factor of 0.2 V, 8.7 mA/cm2, and 32%, respectively, giving a power conversion efficiency of η=0.6% under AM 1.5 G illumination. Surface passivation of the GaAs results in further improvement, yielding η=1.44% under AM 1.5 G illumination. External quantum efficiency measurements of these polymer/inorganic solar cells are also presented.

InGaAs heterostructure formation in catalyst-free GaAs nanopillars by selective-area metal-organic vapor phase epitaxy

We investigate axial GaAs/InGaAs/GaAs heterostructures embedded in GaAsnanopillars via catalyst-free selective-area metal-organic chemical vapor deposition. Structural characterization by transmission electron microscopy with energy dispersive x-ray spectroscopy(EDS) indicates formation of axial In x Ga 1 − x As ( x ∼ 0.20 ) inserts with thicknesses from 36 to 220 nm with ±10% variation and graded Ga:In transitions controlled by In segregation. Using the heterointerfaces as markers, the vertical growth rate is determined to increase linearly during growth.Photoluminescence from 77 to 290 K and EDS suggest the presence of strain in the shortest inserts. This capability to control the formation of axial nanopillarheterostructures is crucial for optimized device integration.

Monolithically Integrated InGaAs Nanowires on 3D Structured Silicon-on-Insulator as a New Platform for Full Optical Links

Monolithically integrated III-V semiconductors on a silicon-on-insulator (SOI) platform can be used as a building block for energy-efficient on-chip optical links. Epitaxial growth of III-V semiconductors on silicon, however, has been challenged by the large mismatches in lattice constants and thermal expansion coefficients between epitaxial layers and silicon substrates. Here, we demonstrate for the first time the monolithic integration of InGaAs nanowires on the SOI platform and its feasibility for photonics and optoelectronic applications. InGaAs nanowires are grown not only on a planar SOI layer but also on a 3D structured SOI layer by catalyst-free metal-organic chemical vapor deposition. The precise positioning of nanowires on 3D structures, including waveguides and gratings, reveals the versatility and practicality of the proposed platform. Photoluminescence measurements exhibit that the composition of ternary InGaAs nanowires grown on the SOI layer has wide tunability covering all telecommunication wavelengths from 1.2 to 1.8 μm. We also show that the emission from an optically pumped single nanowire is effectively coupled and transmitted through an SOI waveguide, explicitly showing that this work lays the foundation for a new platform toward energy-efficient optical links.

High-Quality InAsSb Nanowires Grown by Catalyst-Free Selective-Area Metal–Organic Chemical Vapor Deposition

We report on the first demonstration of InAs1-xSbx nanowires grown by catalyst-free selective-area metal-organic chemical vapor deposition (SA-MOCVD). Antimony composition as high as 15 % is achieved, with strong photoluminescence at all compositions. The quality of the material is assessed by comparing the photoluminescence (PL) peak full-width at half-max (fwhm) of the nanowires to that of epitaxially grown InAsSb thin films on InAs. We find that the fwhm of the nanowires is only a few meV broader than epitaxial films, and a similar trend of relatively constant fwhm for increasing antimony composition is observed. Furthermore, the PL peak energy shows a strong dependence on temperature, suggesting wave-vector conserving transitions are responsible for the observed PL in spite of lattice mismatched growth on InAs substrate. This study shows that high-quality InAsSb nanowires can be grown by SA-MOCVD on lattice mismatched substrate, resulting in material suitable for infrared detectors and high-performance nanoelectronic devices.

Thin 3D Multiplication Regions in Plasmonically Enhanced Nanopillar Avalanche Detectors

We demonstrate a nanopillar (NP) device structure for implementing plasmonically enhanced avalanche photodetector arrays with thin avalanche volumes (∼ 310 nm × 150 nm × 150 nm). A localized 3D electric field due to a core-shell PN junction in a NP acts as a multiplication region, while efficient light absorption takes place via surface plasmon polariton Bloch wave (SPP-BW) modes due to a self-aligned metal nanohole lattice. Avalanche gains of ∼216 at 730 nm at -12 V are obtained. We show through capacitance-voltage characterization, temperature-dependent breakdown measurements, and detailed device modeling that the avalanche region is on the order of the ionization path length, such that dead-space effects become significant. This work presents a clear path toward engineering dead space effects in thin 3D-confined multiplication regions for high performance avalanche detectors for applications in telecommunications, sensing and single photon detection.

Photoconductive gain in patterned nanopillar photodetector arrays

We report on the photoconductance characteristics of indium tin oxide (ITO)-GaAs photodetectors based on patterned nanopillar (NP) arrays grown by metal-organic chemical vapor deposition. The NPs are partially encapsulated by commercially available polymer to allow transparent ITO contact to exposed NP tips. Under illumination, the NP photodetectors demonstrate photoconductive gain in both forward and reverse bias. The mechanism for photoconductive gain is attributed to both the lowering of the Schottky barrier at the ITO-GaAs interface by photogenerated holes, and also the increase in the conduction volume of the NPs under illumination.

High quantum efficiency nanopillar photodiodes overcoming the diffraction limit of light

InAs1-xSbx nanowires have recently attracted interest for infrared sensing applications due to the small bandgap and high thermal conductivity. However, previous reports on nanowire-based infrared sensors required low operating temperatures in order to mitigate the high dark current and have shown poor sensitivities resulting from reduced light coupling efficiency beyond the diffraction limit. Here, InAsSb nanopillar photodiodes with high quantum efficiency are achieved by partially coating the nanopillar with metal that excites localized surface plasmon resonances, leading to quantum efficiencies of ∼29% at 2390 nm. These high quantum efficiency nanopillar photodiodes, with 180 nm diameters and 1000 nm heights, allow operation at temperatures as high as 220 K and exhibit a detection wavelength up to 3000 nm, well beyond the diffraction limit. The InAsSb nanopillars are grown on low cost GaAs (111)B substrates using an InAs buffer layer, making our device architecture a promising path toward low-cost infrared focal plane arrays with high operating temperature.

3D Nanopillar optical antenna photodetectors

We demonstrate 3D surface plasmon photoresponse in nanopillar arrays resulting in enhanced responsivity due to both Localized Surface Plasmon Resonances (LSPRs) and Surface Plasmon Polariton Bloch Waves (SPP-BWs). The LSPRs are excited due to a partial gold shell coating the nanopillar which acts as a 3D Nanopillar Optical Antenna (NOA) in focusing light into the nanopillar. Angular photoresponse measurements show that SPP-BWs can be spectrally coincident with LSPRs to result in a x2 enhancement in responsivity at 1180 nm. Full-wave Finite Difference Time Domain (FDTD) simulations substantiate both the spatial and spectral coupling of the SPP-BW / LSPR for enhanced absorption and the nature of the LSPR. Geometrical control of the 3D NOA and the self-aligned metal hole lattice allows the hybridization of both localized and propagating surface plasmon modes for enhanced absorption. Hybridized plasmonic modes opens up new avenues in optical antenna design in nanoscale photodetectors.

Composite axial/core-shell nanopillar light-emitting diodes at 1.3 μm

Selective-area growth of III-V nanopillars (NPs) is used to demonstrate near-infrared emitters that employ a composite axial/core-shell heterostructure. The axial p-i-n heterostructure allows growth of strain relaxed InGaAs inserts emitting at 1.3 μm. Radial growth of an InGaP shell provides in-situ surface passivation to reduce non-radiative recombination and space-charge limited transport due to mid-gap surface states. The resulting light-emitting diode is comparable to bulk devices with an ideality factor of η = 1.67 and reverse bias leakage of 12 nA at −5 V. This device performance makes the combination of axial current injection with in-situ passivation a promising approach to NP based emitters.

Monolithic InGaAs Nanowire Array Lasers on Silicon-on-Insulator Operating at Room Temperature

Chip-scale integrated light sources are a crucial component in a broad range of photonics applications. III-V semiconductor nanowire emitters have gained attention as a fascinating approach due to their superior material properties, extremely compact size, and capability to grow directly on lattice-mismatched silicon substrates. Although there have been remarkable advances in nanowire-based emitters, their practical applications are still in the early stages due to the difficulties in integrating nanowire emitters with photonic integrated circuits. Here, we demonstrate for the first time optically pumped III-V nanowire array lasers monolithically integrated on silicon-on-insulator (SOI) platform. Selective-area growth of InGaAs/InGaP core/shell nanowires on an SOI substrate enables the nanowire array to form a photonic crystal nanobeam cavity with superior optical and structural properties, resulting in the laser to operate at room temperature. We also show that the nanowire array lasers are effectively coupled with SOI waveguides by employing nanoepitaxy on a prepatterned SOI platform. These results represent a new platform for ultracompact and energy-efficient optical links and unambiguously point the way toward practical and functional nanowire lasers.