Pradyumna Goli

Thermal Properties of Graphene–Copper–Graphene Heterogeneous Films

We demonstrated experimentally that graphene-Cu-graphene heterogeneous films reveal strongly enhanced thermal conductivity as compared to the reference Cu and annealed Cu films. Chemical vapor deposition of a single atomic plane of graphene on both sides of 9 μm thick Cu films increases their thermal conductivity by up to 24% near room temperature. Interestingly, the observed improvement of thermal properties of graphene-Cu-graphene heterofilms results primarily from the changes in Cu morphology during graphene deposition rather than from graphenes action as an additional heat conducting channel. Enhancement of thermal properties of graphene-capped Cu films is important for thermal management of advanced electronic chips and proposed applications of graphene in the hybrid graphene-Cu interconnect hierarchies.

Charge Density Waves in Exfoliated Films of van der Waals Materials: Evolution of Raman Spectrum in TiSe2

A number of the charge-density-wave materials reveal a transition to the macroscopic quantum state around 200 K. We used graphene-like mechanical exfoliation of TiSe(2) crystals to prepare a set of films with different thicknesses. The transition temperature to the charge-density-wave state was determined via modification of Raman spectra of TiSe(2) films. It was established that the transition temperature can increase from its bulk value to ~240 K as the thickness of the van der Waals films reduces to the nanometer range. The obtained results are important for the proposed applications of such materials in the collective-state information processing, which require room-temperature operation.

Low-frequency 1/f noise in MoS2 transistors: Relative contributions of the channel and contacts

We report on the results of the low-frequency (1/f, where f is frequency) noise measurements in MoS2 field-effect transistors revealing the relative contributions of the MoS2 channel and Ti/Au contacts to the overall noise level. The investigation of the 1/f noise was performed for both as fabricated and aged transistors. It was established that the McWhorter model of the carrier number fluctuations describes well the 1/f noise in MoS2 transistors, in contrast to what is observed in graphene devices. The trap densities extracted from the 1/f noise data for MoS2 transistors, are 1.5 x 10^19 eV-1cm-3 and 2 x 10^20 eV-1cm-3 for the as fabricated and aged devices, respectively. It was found that the increase in the noise level of the aged MoS2 transistors is due to the channel rather than the contact degradation. The obtained results are important for the proposed electronic applications of MoS2 and other van der Waals materials.We report on the results of the low-frequency (1/f, where f is frequency) noise measurements in MoS2 field-effect transistors revealing the relative contributions of the MoS2 channel and Ti/Au contacts to the overall noise level. The investigation of the 1/f noise was performed for both as fabricated and aged transistors. It was established that the McWhorter model of the carrier number fluctuations describes well the 1/f noise in MoS2 transistors, in contrast to what is observed in graphene devices. The trap densities extracted from the 1/f noise data for MoS2 transistors, are 2 × 1019 eV−1cm−3 and 2.5 × 1020 eV−1cm−3 for the as fabricated and aged devices, respectively. It was found that the increase in the noise level of the aged MoS2 transistors is due to the channel rather than the contact degradation. The obtained results are important for the proposed electronic applications of MoS2 and other van der Waals materials.

Phonon and thermal properties of exfoliated TaSe2 thin films

We report on the phonon and thermal properties of thin films of tantalum diselenide (2H-TaSe2) obtained via the graphene-like mechanical exfoliation of crystals grown by chemical vapor transport. The ratio of the intensities of the Raman peak from the Si substrate and the E2g peak of TaSe2 presents a convenient metric for quantifying film thickness. The temperature coefficients for two main Raman peaks, A1g and E2g, are -0.013 and -0.0097 cm-1/oC, respectively. The Raman optothermal measurements indicate that the room temperature thermal conductivity in these films decreases from its bulk value of ~16 W/mK to ~9 W/mK in 45-nm thick films. The measurement of electrical resistivity of the field-effect devices with TaSe2 channels indicates that heat conduction is dominated by acoustic phonons in these van der Waals films. The scaling of thermal conductivity with the film thickness suggests that the phonon scattering from the film boundaries is substantial despite the sharp interfaces of the mechanically cleaved samples. These results are important for understanding the thermal properties of thin films exfoliated from TaSe2 and other metal dichalcogenides, as well as for evaluating self-heating effects in devices made from such materials.

Toward Lithium Ion Batteries with Enhanced Thermal Conductivity

As batteries become more powerful and utilized in diverse applications, thermal management becomes one of the central problems in their application. We report the results on thermal properties of a set of different Li-ion battery electrodes enhanced with multiwalled carbon nanotubes. Our measurements reveal that the highest in-plane and cross-plane thermal conductivities achieved in the carbon-nanotube-enhanced electrodes reached up to 141 and 3.6 W/mK, respectively. The values for in-plane thermal conductivity are up to 2 orders of magnitude higher than those for conventional electrodes based on carbon black. The electrodes were synthesized via an inexpensive scalable filtration method, and we demonstrate that our approach can be extended to commercial electrode-active materials. The best performing electrodes contained a layer of γ-Fe2O3 nanoparticles on carbon nanotubes sandwiched between two layers of carbon nanotubes and had in-plane and cross-plane thermal conductivities of ∼50 and 3 W/mK, respectively, at room temperature. The obtained results are important for thermal management in Li-ion and other high-power-density batteries.

All-metallic electrically gated 2H-TaSe2 thin-film switches and logic circuits

We report the fabrication and performance of all-metallic three-terminal devices with tantalum diselenide thin-film conducting channels. For this proof-of-concept demonstration, the layers of 2H-TaSe2 were exfoliated mechanically from single crystals grown by the chemical vapor transport method. Devices with nanometer-scale thicknesses exhibit strongly non-linear current-voltage characteristics, unusual optical response, and electrical gating at room temperature. We have found that the drain-source current in thin-film 2H-TaSe2–Ti/Au devices reproducibly shows an abrupt transition from a highly resistive to a conductive state, with the threshold tunable via the gate voltage. Such current-voltage characteristics can be used, in principle, for implementing radiation-hard all-metallic logic circuits. These results may open new application space for thin films of van der Waals materials.

Graphene-enhanced phase change materials for thermal management of battery packs

Graphene and few-layer graphene reveal exceptionally high thermal conduction properties, which can be used for thermal management. Here we show that incorporation of graphene and few-layer graphene to the hydrocarbon-based phase change material allows one to increase its thermal conductivity by more than two orders of magnitude while preserving its latent heat storage ability. A combination of the sensible and latent heat storage together with the improved heat conduction results in a composite material with the exceptional thermal management capabilities. We show that the graphene-enhanced phase change material can substantially improve the thermal management of Li-ion and other advanced types o f batteries.