R. Samnakay

Low-frequency 1/f noise in MoS2 transistors: Relative contributions of the channel and contacts

We report on the results of the low-frequency (1/f, where f is frequency) noise measurements in MoS2 field-effect transistors revealing the relative contributions of the MoS2 channel and Ti/Au contacts to the overall noise level. The investigation of the 1/f noise was performed for both as fabricated and aged transistors. It was established that the McWhorter model of the carrier number fluctuations describes well the 1/f noise in MoS2 transistors, in contrast to what is observed in graphene devices. The trap densities extracted from the 1/f noise data for MoS2 transistors, are 1.5 x 10^19 eV-1cm-3 and 2 x 10^20 eV-1cm-3 for the as fabricated and aged devices, respectively. It was found that the increase in the noise level of the aged MoS2 transistors is due to the channel rather than the contact degradation. The obtained results are important for the proposed electronic applications of MoS2 and other van der Waals materials.We report on the results of the low-frequency (1/f, where f is frequency) noise measurements in MoS2 field-effect transistors revealing the relative contributions of the MoS2 channel and Ti/Au contacts to the overall noise level. The investigation of the 1/f noise was performed for both as fabricated and aged transistors. It was established that the McWhorter model of the carrier number fluctuations describes well the 1/f noise in MoS2 transistors, in contrast to what is observed in graphene devices. The trap densities extracted from the 1/f noise data for MoS2 transistors, are 2 × 1019 eV−1cm−3 and 2.5 × 1020 eV−1cm−3 for the as fabricated and aged devices, respectively. It was found that the increase in the noise level of the aged MoS2 transistors is due to the channel rather than the contact degradation. The obtained results are important for the proposed electronic applications of MoS2 and other van der Waals materials.

Selective chemical vapor sensing with few-layer MoS2 thin-film transistors: Comparison with graphene devices

We demonstrated selective gas sensing with MoS2 thin-film transistors using the change in the channel conductance, characteristic transient time, and low-frequency current fluctuations as the sensing parameters. The back-gated MoS2 thin-film field-effect transistors were fabricated on Si/SiO2 substrates and intentionally aged for a month to verify reliability and achieve better current stability. The same devices with the channel covered by 10 nm of Al2O3 were used as reference samples. The exposure to ethanol, acetonitrile, toluene, chloroform, and methanol vapors results in drastic changes in the source-drain current. The current can increase or decrease by more than two-orders of magnitude depending on the polarity of the analyte. The reference devices with coated channel did not show any response. It was established that transient time of the current change and the normalized spectral density of the low-frequency current fluctuations can be used as additional sensing parameters for selective gas detec...

Zone-Folded Phonons and the Commensurate–Incommensurate Charge-Density-Wave Transition in 1T-TaSe2 Thin Films

Bulk 1T-TaSe2 exhibits unusually high charge density wave (CDW) transition temperatures of 600 and 473 K below which the material exists in the incommensurate (I-CDW) and the commensurate (C-CDW) charge-density-wave phases, respectively. The (13)(1/2) × (13)(1/2) C-CDW reconstruction of the lattice coincides with new Raman peaks resulting from zone-folding of phonon modes from middle regions of the original Brillouin zone back to Γ. The C-CDW transition temperatures as a function of film thickness are determined from the evolution of these new Raman peaks, and they are found to decrease from 473 to 413 K as the film thicknesses decrease from 150 to 35 nm. A comparison of the Raman data with ab initio calculations of both the normal and C-CDW phases gives a consistent picture of the zone-folding of the phonon modes following lattice reconstruction. The Raman peak at ∼154 cm(-1) originates from the zone-folded phonons in the C-CDW phase. In the I-CDW phase, the loss of translational symmetry coincides with a strong suppression and broadening of the Raman peaks. The observed change in the C-CDW transition temperature is consistent with total energy calculations of bulk and monolayer 1T-TaSe2.Bulk 1T-TaSe2 exhibits unusually high charge density wave (CDW) transition temperatures of 600 K and 473 K below which the material exists in the incommensurate (I-CDW) and the commensurate (C-CDW) charge-density-wave phases, respectively. The C-CDW reconstruction of the lattice coincides with new Raman peaks resulting from zone-folding of phonon modes from middle regions of the original Brillouin zone back to the Gamma point. The C-CDW transition temperatures as a function of film thickness are determined from the evolution of these new Raman peaks and they are found to decrease from 473K to 413K as the film thicknesses decrease from 150 nm to 35 nm. A comparison of the Raman data with ab initio calculations of both the normal and C-CDW phases gives a consistent picture of the zone-folding of the phonon modes following lattice reconstruction. In the I-CDW phase, the loss of translational symmetry coincides with a strong suppression and broadening of the Raman peaks. The observed change in the C-CDW transition temperature is consistent with total energy calculations of bulk and monolayer 1T-TaSe2.

High-temperature performance of MoS2 thin-film transistors: Direct current and pulse current-voltage characteristics

We report on fabrication of MoS2 thin-film transistors (TFTs) and experimental investigations of their high-temperature current-voltage characteristics. The measurements show that MoS2 devices remain functional to temperatures of at least as high as 500 K. The temperature increase results in decreased threshold voltage and mobility. The comparison of the direct current (DC) and pulse measurements shows that the direct current sub-linear and super-linear output characteristics of MoS2 thin-films devices result from the Joule heating and the interplay of the threshold voltage and mobility temperature dependences. At temperatures above 450 K, a kink in the drain current occurs at zero gate voltage irrespective of the threshold voltage value. This intriguing phenomenon, referred to as a “memory step,” was attributed to the slow relaxation processes in thin films similar to those in graphene and electron glasses. The fabricated MoS2 thin-film transistors demonstrated stable operation after two months of aging....

All-metallic electrically gated 2H-TaSe2 thin-film switches and logic circuits

We report the fabrication and performance of all-metallic three-terminal devices with tantalum diselenide thin-film conducting channels. For this proof-of-concept demonstration, the layers of 2H-TaSe2 were exfoliated mechanically from single crystals grown by the chemical vapor transport method. Devices with nanometer-scale thicknesses exhibit strongly non-linear current-voltage characteristics, unusual optical response, and electrical gating at room temperature. We have found that the drain-source current in thin-film 2H-TaSe2–Ti/Au devices reproducibly shows an abrupt transition from a highly resistive to a conductive state, with the threshold tunable via the gate voltage. Such current-voltage characteristics can be used, in principle, for implementing radiation-hard all-metallic logic circuits. These results may open new application space for thin films of van der Waals materials.

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We report on the transport and low-frequency noise measurements of MoS2 thin-film transistors (TFTs) with thin (2-3 atomic layers) and thick (15-18 atomic layers) channels. The back-gated transistors made with the relatively thick MoS2 channels have advantages of the higher electron mobility and lower noise level. The normalized noise spectral density of the low-frequency 1/f noise in thick MoS2 transistors is of the same level as that in graphene. The MoS2 transistors with the atomically thin channels have substantially higher noise levels. It was established that, unlike in graphene devices, the noise characteristics of MoS2 transistors with thick channels (15-18 atomic planes) could be described by the McWhorter model. Our results indicate that the channel thickness optimization is crucial for practical applications of MoS2 TFTs.

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We report the results of an investigation of the temperature dependence of the magnon and phonon frequencies in NiO. A combination of Brillouin-Mandelstam and Raman spectroscopies allowed us to elucidate the evolution of the phonon and magnon spectral signatures from the Brillouin zone center (GHz range) to the second-order peaks from the zone boundary (THz range). The temperature-dependent behavior of the magnon and phonon bands in the NiO spectrum indicates the presence of antiferromagnetic (AF) order fluctuation or a persistent AF state at temperatures substantially above the Neel temperature (TN=523 K). Tuning the intensity of the excitation laser provides a method for disentangling the features of magnons from acoustic phonons in AF materials without the application of a magnetic field. Our results are useful for the interpretation of the inelastic-light scattering spectrum of NiO and add to the knowledge of its magnon properties important for THz spintronic devices.We report results of an investigation of the temperature dependence of the magnon and phonon frequencies in NiO. A combination of Brillouin - Mandelstam and Raman spectroscopies allowed us to elucidate the evolution of the phonon and magnon spectral signatures from the Brillouin zone center (GHz range) to the second-order peaks from the zone boundary (THz range). The temperature-dependent behavior of the magnon and phonon bands in the NiO spectrum indicates the presence of antiferromagnetic (AF) order fluctuation or a persistent AF state at temperatures above the Neel temperature (T=523 K). Tuning the intensity of the excitation laser provides a method for disentangling the features of magnons from acoustic phonons without the application of a magnetic field. Our results are useful for interpretation of the inelastic-light scattering spectrum of NiO, and add to the knowledge of its magnon properties important for THz spintronic devices.

Noise Characteristics of MoS 2 Thin-Film Transistors: Comparison of Single and Multilayer Structures

We demonstrate, for the first time, selective gas sensing using MoS2 bilayer Thin Film Transistors (TFTs). The TFTs were fabricated using exfoliation from bulk crystals and transferring onto Si/SiO2 substrates. For control purposes, we used the same TFTs but with the surface covered by a 10 nm Al2O3 layer. The extracted field effect mobility varied from 0.1 to 7 cm2/V-s in different samples and was only a very weakly dependent on temperature in the range from room temperature to 220°C. The room temperature on-to-off ratio was ~ 104 and decreased to 103 at 220°C. Under the exposure to ethanol, acetonitrile, toluene, chloroform, and methanol vapors, the TFT current in uncovered samples changed with the increase amount strongly dependent on the kind of gas. The covered TFTs exhibited no change. We also report on 1/f noise measurement under the gas exposure and show that, just like for graphene transistors, the change in the noise spectra is also dependent on the kind of the sensed gas and could be used as component of the gas signature. The MoS2 devices demonstrate a much larger sensitivity than similar graphene devices.