Pratik Pataniya

Growth and surface topography of WSe2 single crystal

Tungsten Di-Selenide belongs to the family of TMDCs showing their potential applications in the fields of Optoelectronics and PEC solar cells. Here in the present investigation single crystals of WSe2 were grown by Direct Vapour Transport Technique in a dual zone furnace having temperature difference of 50 K between the two zones. These single crystals were characterized by EDAX which confirms the stiochiometry of the grown crystals. Surface topography of the crystal was studied by optical micrograph showing the left handed spirals on the surface of WSe2 crystals. Single crystalline nature of the crystals was confirmed by SAED.

Investigation of transient photoresponse of WSSe ternary alloy crystals

Transition metal chalcogenides have been studied intensively in recent time due to their tunability of electronic properties by compositional change, alloying and by transforming bulk material into crystalline 2D structure. These changes lead to the development of verities of next generation opto-electronic device applications such as solar cells, FETs and flexible detectors etc. In present work, we report growth and characterization of crystalline ternary alloy WSSe by direct vapour transport technique. A photodetector is constructed using grown crystals to study its transient photoresponse under polychromatic radiation. The WSSe crystals are mechanically exfoliated to thickness of 3 µm and the lateral dimension of prepared sample is 2.25 mm2. The time-resolved photoresponse is studied under polychromatic illumination of power density ranging from 10 to 40 mW/cm2. The photo response is also studied under different bias voltages ranging from 0.1 V to 0.5 V. The typical photodetector parameters i.e. photocurrent, rise and fall time, responsivity and sensitivity are evaluated and discussed in light of the ternary alloy composition.Transition metal chalcogenides have been studied intensively in recent time due to their tunability of electronic properties by compositional change, alloying and by transforming bulk material into crystalline 2D structure. These changes lead to the development of verities of next generation opto-electronic device applications such as solar cells, FETs and flexible detectors etc. In present work, we report growth and characterization of crystalline ternary alloy WSSe by direct vapour transport technique. A photodetector is constructed using grown crystals to study its transient photoresponse under polychromatic radiation. The WSSe crystals are mechanically exfoliated to thickness of 3 µm and the lateral dimension of prepared sample is 2.25 mm2. The time-resolved photoresponse is studied under polychromatic illumination of power density ranging from 10 to 40 mW/cm2. The photo response is also studied under different bias voltages ranging from 0.1 V to 0.5 V. The typical photodetector parameters i.e. photoc...

Effect of doping on all TMC vertical heterointerfaces

The present work reports the growth and basic characterizations of GeSePbx (x=0, 0.02, 0.04) layered mono chalcogenide single crystal substrates for preparation of heterojunction devices. These crystals are grown by Direct Vapour Transport (DVT) Technique [1,2]. Heterojunction interfaces on these substrates are prepared using thermal evaporation of nanocrystalline SnSe thin films having 5kA thickness. The electrical characterizations reveal the rectifying behavior of the devices based on which its ideality factor, barrier height, saturation current, series resistance etc. have been determined using thermionic emission model [3,4]. The device parameters have been determined and analyzed by three different methods viz. LnI-V, Cheung’s method and Norde method [5]. The variation in the device parameters in light of doping is reported in the present work.The present work reports the growth and basic characterizations of GeSePbx (x=0, 0.02, 0.04) layered mono chalcogenide single crystal substrates for preparation of heterojunction devices. These crystals are grown by Direct Vapour Transport (DVT) Technique [1,2]. Heterojunction interfaces on these substrates are prepared using thermal evaporation of nanocrystalline SnSe thin films having 5kA thickness. The electrical characterizations reveal the rectifying behavior of the devices based on which its ideality factor, barrier height, saturation current, series resistance etc. have been determined using thermionic emission model [3,4]. The device parameters have been determined and analyzed by three different methods viz. LnI-V, Cheung’s method and Norde method [5]. The variation in the device parameters in light of doping is reported in the present work.

Photosensitive space charge limited current in screen printed CdTe thin films

Group II-VI Compounds have emerged out as most suitable in the class of photo sensitive material. They represent a strong position in terms of their applications in the field of detectors as well as photo voltaic devices. Cadmium telluride is the prime member of this Group, because of high acceptance of this material as active component in opto-electronic devices. In this paper we report preparation and characterization of CdTe thin films by using a most economical screen printing technique in association with sintering at 510°C temperature. Surface morphology and smoothness are prime parameters of any deposited to be used as an active region of devices. Thus, we studied of the screen printed thin film by means of atomic force microscopy (AFM) and scanning electron microscopy (SEM) for this purpose. However, growth processes induced intrinsic defects in fabricated films work as charge traps and affect the conduction process significantly. So the conduction mechanism of deposited CdTe thin film is studied under dark as well as illuminated conditions. It is found that the deposited films showed the space charge limited conduction (SCLC) mechanism and hence various parameters of space charge limited conduction (SCLC) of CdTe film were evaluated and discussed and the photo responsive resistance is also presented in this paper.Group II-VI Compounds have emerged out as most suitable in the class of photo sensitive material. They represent a strong position in terms of their applications in the field of detectors as well as photo voltaic devices. Cadmium telluride is the prime member of this Group, because of high acceptance of this material as active component in opto-electronic devices. In this paper we report preparation and characterization of CdTe thin films by using a most economical screen printing technique in association with sintering at 510°C temperature. Surface morphology and smoothness are prime parameters of any deposited to be used as an active region of devices. Thus, we studied of the screen printed thin film by means of atomic force microscopy (AFM) and scanning electron microscopy (SEM) for this purpose. However, growth processes induced intrinsic defects in fabricated films work as charge traps and affect the conduction process significantly. So the conduction mechanism of deposited CdTe thin film is studied ...

Preparation of H2SO4 doped Polyaniline thin film solar cells by spin coating technique

A water diluted H2SO4 solution was used to dissolve Polyaniline in order to obtain a solution for preparation of thin films by spin coating technique. The chemical bonding characteristics of the prepared films were investigated using Furrier transform infrared spectroscopy (FTIR) and the structural characterizations were accomplished by X-ray diffraction (XRD). UV-VIS absorption spectroscopy was used to determine the optical band gap of the deposited PANi films and the indirect optical band gap of PANi was estimated to be in the range of 1.3 to 1.8 eV from the Tauc’s plot. Further, these films were deposited on the n-MoSe2 crystal in order to complete a solar cell structure. The polychromatic photo response of the prepared solar cells for different intensities was studied at room temperature and the efficiency and fill factor were found to be 1% and 0.26 respectively. The obtained Photo-conversion characteristics (I-V) were also used to determined series and shunt resistances of the prepared device. The s...