V.M. Pathak

Growth and surface topography of WSe2 single crystal

Tungsten Di-Selenide belongs to the family of TMDCs showing their potential applications in the fields of Optoelectronics and PEC solar cells. Here in the present investigation single crystals of WSe2 were grown by Direct Vapour Transport Technique in a dual zone furnace having temperature difference of 50 K between the two zones. These single crystals were characterized by EDAX which confirms the stiochiometry of the grown crystals. Surface topography of the crystal was studied by optical micrograph showing the left handed spirals on the surface of WSe2 crystals. Single crystalline nature of the crystals was confirmed by SAED.

Structural and Optical Characterization of Tungsten Diselenide Crystals Grown by DVT Technique

WSe2 is a member of groupVI Transition Metal Dichalcogenides (TMDCs) and has been observed to be a highly stable semiconducting material. It has been grown in crystal form using a direct vapour transport technique in present case. The grown WSe2 crystals were characterized for the structural properties using X-ray diffraction technique (XRD). The hexagonal structure was confirmed through this analysis. Using the data of XRD, various parameters like crystalline size, lattice parameters, micro strain, dislocation density, unit cell volume, unit cell density, growth fault and deformation fault probability etc were found. It was seen that the micro strain, dislocation density and growth & deformation fault probabilities were found to be very low in WSe2 crystals. The grown WSe2 crystals were characterized for optical properties using UV-VIS-NIR spectroscopy. The absorption spectra of WSe2 grown in present case revealed the fact that WSe2 posses direct band gap around 1.38eV. Layered di-chalcogenides WSe2 (or MoSe2) are used for desired applications such as in photo-conversion devices.

Structural and Optical Characterization of Zinc Telluride Thin Films

Group II-VI compounds have been investigated largely in last two decades due to their interesting optoelectronic properties. ZnTe, a member of this family, possesses a bandgap around 2.26eV. This material is now a day investigated in thin film form due to its potential towards various viable applications. In this paper, the authors report their investigations on the preparation of ZnTe thin films using vacuum evaporation technique and their structural and optical characterizations. The structural characterization, carried out using an X-ray diffraction (XRD) technique shows that ZnTe used in present case possesses a cubic structure. Using the same data, the micro strain and dislocation density were evaluated and found to be around 1.465×10-3 lines-m2 and 1.639×1015 lines/m2respecctively. The optical characterization carried out in UV-VIS-NIR region reveals the fact that band gap of ZnTe is around 2.2eV in present case. In addition to this, it was observed that the value of bandgap decreases as the thickness of films increases. The direct transitions of the carries are involved in ZnTe. Using the data of UV-VIS-NIR spectroscopy, the transmission coefficient and extinction coefficient were also calculated for ZnTe thin films. Besides, the variation of extinction coefficient with wavelength has also been discussed here.

Current Transport in Copper Schottky Contacts to a-Plane/c-Plane n-Type MoSe2

We identically prepared Cu-nMoSe2 (a-plane) and Cu-nMoSe2 (c-plane) Schottky barrier diodes (SBDs) on the same n-type MoSe2 single crystal. The effective Schottky barrier heights (SBHs) and ideality factors were obtained from the current-voltage-temperature (I—V—T) characteristics. The barrier height and ideality factor, estimated from the conventional thermionic emission model by assuming a Gaussian barrier distribution, are highly dependent on temperature. A notable deviation from the theoretical Richardson constant value is also observed in the conventional Richardson plot. The decrease in the experimental barrier height ΦB0 and an increase in the ideality factor n with a decrease in temperature have been explained on the basis of barrier height inhomogeneities at the metal-semiconductor interface. It is proven that the presence of a distribution of barrier heights is responsible for the apparent decrease of the zero bias barrier height. The voltage dependence of the standard deviation causes the increase of the ideality factor at low temperatures. The value of the Richardson constant obtained without considering the inhomogeneous barrier heights is much closer than the theoretical value. The Cu-nMoSe2 (a-plane) Schottky diode shows better results in comparison with the nMoSe2 (c-plane) Schottky diode.

Characterization of SnSePb0.1 Thin Films Deposited by Flash Evaporation Technique

Tin Selenide compounds have attracted considerable attention because of their important properties useful for optoelectronics, holographic recording systems, electronic switching and infrared production and detection. Moreover, SnSe is a semiconductor with a band gap of about 1 eV that makes it potential candidate for solar cell material. Further, the optoelectronic properties of SnSe can be modified using doping of lead, copper etc. In this context, we report here results of the preparation and characterization of flash evaporated lead doped SnSe thin films. Thin films of SnSePb0.1 having thickness of 100nm and 500nm were deposited on to chemically cleaned glass substrates. The chemical composition of the deposited SnSePb0.1thin films has been evaluated using EDAX technique. The structure of SnSePb0.1was studied using low angle XRD and it shows that the deposited films are polycrystalline in nature having orthorhombic structure. Various lattice parameters along with micro strain for both 100nm and 500nm thin films have been evaluated. Electrical transport properties have been also investigated using high temperature Hall Effect measurement in the temperature range 300 400K. The decrease in the resistivity of deposited films with increasing temperature confirms the semiconducting behavior of SnSePb0.1 thin films.

Optical Absorption Study of Molybdenum Diselenide and Polyaniline and their Use in Hybrid Solar Cells

The optical characterization of Molybdenum diselenide (MoSe2) and polyaniline (PANI) has been carried in the wavelength range 200 nm to 2500 nm. The detailed analysis of the optical properties has been carried out only for a range 200 nm to 800 nm from which the indirect band gap around 1.42 eV for MoSe2 and 1 eV and 2.5 eV for PANI was evaluated. It was interesting to note that π π* transitions lead to two distinct orders of energy gaps. The hybrid cells were fabricated using a photosensitive interface between MoSe2 and PANI. Various parameters of these heterostructure hybrid cells have been evaluated and it was found that the photoconversion efficiency was around 1%. Using the solar cell characteristics, the presence of trapping centers at the n-MoSe2/ p-PANI interface has been confirmed.

Structural and Thermoelectric Properties of Tungsten Diselenide Crystals

Crystals of Tungsten diselenide (WSe2) have been grown by direct vapour transport (DVT) technique using micro processor controlled dual zone horizontal furnace. The chemical composition and structure of grown crystals were confirmed using energy dispersive analysis of X‐ray (EDAX) and X‐ray diffraction (XRD). In the present investigation thermoelectric power measurements (TEP) have been carried out on the grown crystals. Different electrical transport parameters of semiconductors have been determined and discussed in the paper.Crystals of Tungsten diselenide (WSe2) have been grown by direct vapour transport (DVT) technique using micro processor controlled dual zone horizontal furnace. The chemical composition and structure of grown crystals were confirmed using energy dispersive analysis of X‐ray (EDAX) and X‐ray diffraction (XRD). In the present investigation thermoelectric power measurements (TEP) have been carried out on the grown crystals. Different electrical transport parameters of semiconductors have been determined and discussed in the paper.

Investigation of transient photoresponse of WSSe ternary alloy crystals

Transition metal chalcogenides have been studied intensively in recent time due to their tunability of electronic properties by compositional change, alloying and by transforming bulk material into crystalline 2D structure. These changes lead to the development of verities of next generation opto-electronic device applications such as solar cells, FETs and flexible detectors etc. In present work, we report growth and characterization of crystalline ternary alloy WSSe by direct vapour transport technique. A photodetector is constructed using grown crystals to study its transient photoresponse under polychromatic radiation. The WSSe crystals are mechanically exfoliated to thickness of 3 µm and the lateral dimension of prepared sample is 2.25 mm2. The time-resolved photoresponse is studied under polychromatic illumination of power density ranging from 10 to 40 mW/cm2. The photo response is also studied under different bias voltages ranging from 0.1 V to 0.5 V. The typical photodetector parameters i.e. photocurrent, rise and fall time, responsivity and sensitivity are evaluated and discussed in light of the ternary alloy composition.Transition metal chalcogenides have been studied intensively in recent time due to their tunability of electronic properties by compositional change, alloying and by transforming bulk material into crystalline 2D structure. These changes lead to the development of verities of next generation opto-electronic device applications such as solar cells, FETs and flexible detectors etc. In present work, we report growth and characterization of crystalline ternary alloy WSSe by direct vapour transport technique. A photodetector is constructed using grown crystals to study its transient photoresponse under polychromatic radiation. The WSSe crystals are mechanically exfoliated to thickness of 3 µm and the lateral dimension of prepared sample is 2.25 mm2. The time-resolved photoresponse is studied under polychromatic illumination of power density ranging from 10 to 40 mW/cm2. The photo response is also studied under different bias voltages ranging from 0.1 V to 0.5 V. The typical photodetector parameters i.e. photoc...

Effect of doping on all TMC vertical heterointerfaces

The present work reports the growth and basic characterizations of GeSePbx (x=0, 0.02, 0.04) layered mono chalcogenide single crystal substrates for preparation of heterojunction devices. These crystals are grown by Direct Vapour Transport (DVT) Technique [1,2]. Heterojunction interfaces on these substrates are prepared using thermal evaporation of nanocrystalline SnSe thin films having 5kA thickness. The electrical characterizations reveal the rectifying behavior of the devices based on which its ideality factor, barrier height, saturation current, series resistance etc. have been determined using thermionic emission model [3,4]. The device parameters have been determined and analyzed by three different methods viz. LnI-V, Cheung’s method and Norde method [5]. The variation in the device parameters in light of doping is reported in the present work.The present work reports the growth and basic characterizations of GeSePbx (x=0, 0.02, 0.04) layered mono chalcogenide single crystal substrates for preparation of heterojunction devices. These crystals are grown by Direct Vapour Transport (DVT) Technique [1,2]. Heterojunction interfaces on these substrates are prepared using thermal evaporation of nanocrystalline SnSe thin films having 5kA thickness. The electrical characterizations reveal the rectifying behavior of the devices based on which its ideality factor, barrier height, saturation current, series resistance etc. have been determined using thermionic emission model [3,4]. The device parameters have been determined and analyzed by three different methods viz. LnI-V, Cheung’s method and Norde method [5]. The variation in the device parameters in light of doping is reported in the present work.

Growth, morphological properties and pulsed photo response of MoTe2 single crystal synthesized by DVT technique

Molybednum Di Telluride of group VI belongs to the family of layered transition metal di-chalcogenides (TMDCs). These TMDCs show good potential for applications in the field of optoelectronic devices as they are chemically inert trilayered structure of MX2 type. In the present investigation crystals of MoTe2 are grown by direct vapor transport technique in a dual zone horizontal furnace. The grown crystals were characterized by Energy Dispersive Analysis of X-rays (EDAX) to study its elemental and stoichiometric composition, Selected Area Electron Diffraction (SAED) confirms the hexagonal structure. Spot pattern of electron diffraction shows formation of single phase. Scanning Electron Microscope (SEM) shows the layer by layer growth of the crystals, Thermo Electric Power (TEP) reflects the p-type semiconducting nature of the grown crystals. As this material is photosensitive material having band gap of approximately 1.0 eV, a transient photo response against polychromatic radiation (40 mW/cm2) of photodetector is also measured which showed slow decay in generated photocurrent due to low trapping density within the active area of the prepared device. Thus, it shows that this material can be a good photovoltaic material for constructing a solar cell also.Molybednum Di Telluride of group VI belongs to the family of layered transition metal di-chalcogenides (TMDCs). These TMDCs show good potential for applications in the field of optoelectronic devices as they are chemically inert trilayered structure of MX2 type. In the present investigation crystals of MoTe2 are grown by direct vapor transport technique in a dual zone horizontal furnace. The grown crystals were characterized by Energy Dispersive Analysis of X-rays (EDAX) to study its elemental and stoichiometric composition, Selected Area Electron Diffraction (SAED) confirms the hexagonal structure. Spot pattern of electron diffraction shows formation of single phase. Scanning Electron Microscope (SEM) shows the layer by layer growth of the crystals, Thermo Electric Power (TEP) reflects the p-type semiconducting nature of the grown crystals. As this material is photosensitive material having band gap of approximately 1.0 eV, a transient photo response against polychromatic radiation (40 mW/cm2) of photode...