Qingyang Du

Foldable and Cytocompatible Sol-gel TiO2 Photonics.

Integrated photonics provides a miniaturized and potentially implantable platform to manipulate and enhance the interactions between light and biological molecules or tissues in in-vitro and in-vivo settings, and is thus being increasingly adopted in a wide cross-section of biomedical applications ranging from disease diagnosis to optogenetic neuromodulation. However, the mechanical rigidity of substrates traditionally used for photonic integration is fundamentally incompatible with soft biological tissues. Cytotoxicity of materials and chemicals used in photonic device processing imposes another constraint towards these biophotonic applications. Here we present thin film TiO2 as a viable material for biocompatible and flexible integrated photonics. Amorphous TiO2 films were deposited using a low temperature (<250 °C) sol-gel process fully compatible with monolithic integration on plastic substrates. High-index-contrast flexible optical waveguides and resonators were fabricated using the sol-gel TiO2 material, and resonator quality factors up to 20,000 were measured. Following a multi-neutral-axis mechanical design, these devices exhibit remarkable mechanical flexibility, and can sustain repeated folding without compromising their optical performance. Finally, we validated the low cytotoxicity of the sol-gel TiO2 devices through in-vitro cell culture tests. These results demonstrate the potential of sol-gel TiO2 as a promising material platform for novel biophotonic devices.

Electrospray Deposition of Uniform Thickness Ge23Sb7S70 and As40S60 Chalcogenide Glass Films.

Solution-based electrospray film deposition, which is compatible with continuous, roll-to-roll processing, is applied to chalcogenide glasses. Two chalcogenide compositions are demonstrated: Ge23Sb7S70 and As40S60, which have both been studied extensively for planar mid-infrared (mid-IR) microphotonic devices. In this approach, uniform thickness films are fabricated through the use of computer numerical controlled (CNC) motion. Chalcogenide glass (ChG) is written over the substrate by a single nozzle along a serpentine path. Films were subjected to a series of heat treatments between 100 °C and 200 °C under vacuum to drive off residual solvent and densify the films. Based on transmission Fourier transform infrared (FTIR) spectroscopy and surface roughness measurements, both compositions were found to be suitable for the fabrication of planar devices operating in the mid-IR region. Residual solvent removal was found to be much quicker for the As40S60 film as compared to Ge23Sb7S70. Based on the advantages of electrospray, direct printing of a gradient refractive index (GRIN) mid-IR transparent coating is envisioned, given the difference in refractive index of the two compositions in this study.

Gamma radiation effects in amorphous silicon and silicon nitride photonic devices

Understanding radiation damage is of significant importance for devices operating in radiation-harsh environments. In this Letter, we present a systematic study on gamma radiation effects in amorphous silicon and silicon nitride guided wave devices. It is found that gamma radiation increases the waveguide modal effective indices by as much as 4×10-3 in amorphous silicon and 5×10-4 in silicon nitride at 10 Mrad dose. This Letter further reveals that surface oxidation and radiation-induced densification account for the observed index change.

On-chip infrared spectroscopic sensing: Redefining the benefits of scaling

Infrared (IR) spectroscopy is widely recognized as a gold standard technique for chemical analysis. Recent strides in photonic integration technologies offer a promising route towards enabling miniaturized, rugged platforms for IR spectroscopic analysis. Here we show that simple size scaling by replacing bulky discrete optical elements used in conventional IR spectroscopy with their on-chip counterparts is not a viable route for on-chip infrared spectroscopic sensing, as it cripples the system performance due to the limited optical path length accessible on a chip. In this context, we discuss two novel photonic sensor designs uniquely suited for microphotonic integration. We leverage strong optical and thermal confinement in judiciously designed microcavities to circumvent the thermal diffusion and optical diffraction limits in conventional photothermal sensors and achieve parts-per-billion level gas molecule limit of detection. In the second example, an on-chip spectrometer design with Fellgetts advantage is proposed for the first time. The design enables sub-nm spectral resolution on a millimeter-sized, fully packaged chip without mechanical moving parts.

SiC-on-insulator on-chip photonic sensor in a radiative environment

Silicon carbide has a high refractive index, a large band gap, CMOS compatibility, and excellent chemical, mechanical, and thermal properties, thus making it an ideal material for on-chip photonic sensors in hostile environments. We discuss the design, fabrication, and evaluation of a SiC-on-insulator photonic device for chemical sensing as well as the gamma-ray radiation effects on device performance and sensitivity. The SiC-on-insulator device demonstrates a quality factor of 18,000 at near IR wavelengths and maintains the high quality factor even after a high dose of gamma irradiation. The effect of gamma irradiation on N-methyaniline chemical sensitivity of the SiC-on-insulator sensor is studied.

Microstructure, optical properties, and optical resonators of Hf 1-x Ti x O 2 amorphous thin films

We report Hf1-xTixO2 (0< = x< = 1) thin films (HTO) as index tunable and highly transparent materials for ultraviolet to near infrared integrated photonic devices. By varying the Ti concentration, reactive co-sputtered HTO thin films on thermal oxidized SiO2 on Si substrates show continuously tunable optical band gaps from 3.9 eV to larger than 5 eV. The film refractive index monotonically increases with Ti concentration, varying from 1.8 to 2.4 in the visible to near infrared wavelength range. Micro-disk amorphous HfO2 resonators on SiO2/Si substrates are fabricated using sputtering and lift-off method. A loaded quality factor of ~15800 at around 1580 nm wavelength is achieved in HfO2 disk resonators with diameters of 100 μm. The propagation loss of the HfO2 ridge waveguide is estimated to be 2.5 cm−1. The wide optical transparency range, variable index of refraction, low temperature, CMOS-compatible fabrication capability, and high optical transparency make amorphous HTO thin films promising candicates for integrated photonic applications.

Reconfigurable photonics enabled by optical phase change materials (Conference Presentation)

The dramatic optical property change of optical phase change materials (O-PCMs) between their amorphous and crystalline states potentially allows the realization of reconfigurable photonics devices with low power consumption, such as optical switches and routers, reconfigurable meta-optics, displays, and photonic memories. However, conventional O-PCMs, such as VO2 and Ge2Sb2Te5, are inherently plagued by their excessive optical losses even in dielectric states, limiting their optical performance and hence application space. In this talk, we present the development of a new group of O-PCMs and their implementations in novel photonic devices. Ge-Sb-Se-Te (GSST), obtained by partially substituting Te with Se in traditional GST alloys, feature unprecedented broadband optical transparency covering the telecommunication bands to LWIR. Capitalizing on the dramatically-enhanced optical performance, novel non-volatile, reconfigurable on-chip photonics devices and architectures are demonstrated. GSST-integrated Si photonics based on the material innovation and novel “non-perturbative” designs exhibit significantly improved switching performance over state-of-the-art GST-based approaches. The technology is further scalable to realize non-blocking matrix switches with arbitrary network complexity, paving the path towards high performance reconfigurable photonics chips.

Broadband low-loss optical phase change materials and devices (Conference Presentation)

Optical phase change materials (O-PCMs) are a unique class of materials which exhibit extraordinarily large optical property change (e.g. refractive index change > 1) when undergoing a solid-state phase transition. These materials, exemplified by Mott insulators such as VO2 and chalcogenide compounds, have been exploited for a plethora of emerging applications including optical switching, photonic memories, reconfigurable metasurfaces, and non-volatile display. These traditional phase change materials, however, generally suffer from large optical losses even in their dielectric states, which fundamentally limits the performance of optical devices based on traditional O-PCMs. In this talk, we will discuss our progress in developing O-PCMs with unprecedented broadband low optical loss and their applications in novel photonic systems, such as high-contrast switches and routers towards a reconfigurable optical chip.

Ultra-thin high-efficiency mid-infrared transmissive Huygens meta-optics

The mid-infrared (mid-IR) is a strategically important band for numerous applications ranging from night vision to biochemical sensing. Here we theoretically analyzed and experimentally realized a Huygens metasurface platform capable of fulfilling a diverse cross-section of optical functions in the mid-IR. The meta-optical elements were constructed using high-index chalcogenide films deposited on fluoride substrates: the choices of wide-band transparent materials allow the design to be scaled across a broad infrared spectrum. Capitalizing on a two-component Huygens’ meta-atom design, the meta-optical devices feature an ultra-thin profile (λ0/8 in thickness) and measured optical efficiencies up to 75% in transmissive mode for linearly polarized light, representing major improvements over state-of-the-art. We have also demonstrated mid-IR transmissive meta-lenses with diffraction-limited focusing and imaging performance. The projected size, weight and power advantages, coupled with the manufacturing scalability leveraging standard microfabrication technologies, make the Huygens meta-optical devices promising for next-generation mid-IR system applications.Mid-IR optics can require exotic materials or complicated processing, which can result in high cost and inferior quality. Here the authors report the demonstration of high-efficiency mid-IR transmissive lenses based on dielectric Huygens metasurface, showing diffraction limited focusing and imaging performance.

Ultra-thin, reconfigurable meta-optics using optical phase change materials (Conference Presentation)

The dramatic optical property change of optical phase change materials (O-PCMs) between their amorphous and crystalline states potentially allows the realization of reconfigurable photonic devices with enhanced optical functionalities and low power consumption, such as reconfigurable optical components, optical switches and routers, and photonic memories. Conventional O-PCMs exhibit considerable optical losses, limiting their optical performance as well as application space. In this talk, we present the development of a new group of O-PCMs and their implementations in novel meta-optic devices. Ge-Sb-Se-Te (GSST), obtained by partially substituting Te with Se in traditional GST alloys, feature unprecedented broadband optical transparency covering the telecommunication bands to the LWIR. A drastic refractive index change between the amorphous and crystalline states of GSST is realized and the transition is non-volatile and reversible. Optical metasurfaces consist of optically-thin, subwavelength meta-atom arrays which allow arbitrary manipulation of the wavefront of light. Capitalizing on the dramatically-enhanced optical performance of GSST, transparent and ultra-thin reconfigurable meta-optics in mid-infrared are demonstrated. In one example, GSST-based all-dielectric nano-antennae are used as the fundamental building blocks for meta-optic components. Tunable and switchable metasurface devices are developed, taking advantage of the materials phase changing properties.