Quang-Ho Luc

Effect of annealing processes on the electrical properties of the atomic layer deposition Al2O3/In0.53Ga0.47As metal oxide semiconductor capacitors

The influence of different annealing processes including post deposition annealing (PDA) and post metallization annealing (PMA) with various temperatures (250–400 °C) and ambient [N2 and forming gas (FG)] on the electrical characteristics of Pt/Al2O3/In0.53Ga0.47As MOSCAPs are systemically studied. Comparing to samples underwent high PDA temperature, the higher leakage current has been observed for all of samples underwent high PMA temperature. This has resulted in the degradation of capacitance–voltage (C–V) behaviors. In conjunction with the current–voltage (J–V) measurement, depth profiling Auger electron spectroscopy (AES) and high-resolution transmission electron microscopy (HRTEM) analyses evidence that the out-diffusion of metal into oxide layer is the main source of leakage current. The noticeable passivation effect on the Al2O3/InGaAs interface has also been confirmed by the samples that underwent PDA process.

Electrical Analysis and PBTI Reliability of In 0.53 Ga 0.47 As MOSFETs With AlN Passivation Layer and NH 3 Postremote Plasma Treatment

We report a notable improvement in performance, electron transport, and reliability of HfO₂/In_0.53Ga_0.47As nMOSFETs using a plasma-enhanced atomic layer deposition AlN interfacial passivation layer (IPL) and NH₃ postremote plasma treatment (PRPT). The interface state density D_it decreased by approximately one order of magnitude from 6.1×10¹² to 4×10¹¹ cm^-2eV^-1, and the border trap density Nbt also declined ten times from 2.8×10¹⁹ to 2.7×10¹⁸ cm^-3, resulting in the reduction of the accumulation frequency dispersion and eliminate the inversion hump in C-V characteristics, and thus improves the device performances. Furthermore, positive bias temperature instability stress indicates that the sample with the AlN IPL and NH₃ PRPT is more reliable than the sample without any IPL and plasma treatment. During PBT stress, a smaller threshold voltage shift and less transconductance degradation were observed for the sample with the AlN IPL and NH₃ PRPT. In addition, the maximum overdrive voltage for a ten-year operating lifetime increased from 0.19 to 0.41 V.

Demonstrating 1 nm-oxide-equivalent-thickness HfO2/InSb structure with unpinning Fermi level and low gate leakage current density

In this work, the band alignment, interface, and electrical characteristics of HfO2/InSb metal-oxide-semiconductor structure have been investigated. By using x-ray photoelectron spectroscopy analysis, the conduction band offset of 1.78u2009±u20090.1u2009eV and valence band offset of 3.35u2009±u20090.1u2009eV have been extracted. The transmission electron microscopy analysis has shown that HfO2 layer would be a good diffusion barrier for InSb. As a result, 1u2009nm equivalent-oxide-thickness in the 4u2009nm HfO2/InSb structure has been demonstrated with unpinning Fermi level and low leakage current of 10−4 A/cm−2. The Dit value of smaller than 1012u2009eV−1cm−2 has been obtained using conduction method.

InGaAs QW-MOSFET Performance Improvement Using a PEALD-AlN Passivation Layer and an In-Situ NH 3 Post Remote-Plasma Treatment

In this letter, we report on the impact of a PEALD-AlN interfacial passivation layer (IPL) and an <italic>in-situ</italic> NH₃ post remote-plasma (PRP) treatment onto InGaAs quantum-well MOSFETs with Ti/HfO₂/InGaAs gate stack. Transistors with gate lengths down to 80 nm have been fabricated and characterized. Due to the excellent interfacial quality of HfO₂/AlN/InGaAs, the subthreshold swing and the peak effective channel mobility have been improved to 93 mV/decade and 4253 cm²/Vs, respectively. The drain current has also shown a 4.6-fold enhancement, to 164 mA/mm (<inline-formula> <tex-math notation=LaTeX>

In x Ga 1−x As materials for post CMOS application: Materials and device aspects

{I}_{ mathrm{scriptscriptstyle OFF}} ,,{=},,{100}

HfO2/AlN/In0.53Ga0.47As MOS devices electrical properties and reliability studies

</tex-math></inline-formula> nA/<inline-formula> <tex-math notation=LaTeX>

Study on the electrical characteristics of in situ PEALD-passivated HfO2/In0.53Ga0.47As MOSCAP and MOSFET structures

mu text{m}

Performance improvement of InGaAs FinFET using NH3 treatment

</tex-math></inline-formula> and <inline-formula> <tex-math notation=LaTeX>

Improved Linearity in AlGaN/GaN HEMTs for Millimeter-Wave Applications by Using Dual-Gate Fabrication

{V} _{mathrm {DD}} ,,{=},,{0.5}

Effect of annealing processes on the electrical properties of the atomic layer deposition Al

</tex-math></inline-formula> V), compared with the HfO₂ control device. The results also show that the HfO₂/AlN device exhibits better immunity to short-channel effects (SCEs) than the HfO₂ control device. Furthermore, during positive bias temperature instability stress, a smaller <inline-formula> <tex-math notation=LaTeX>