Quentin Jeangros

Silicon Heterojunction Solar Cells With Copper-Plated Grid Electrodes: Status and Comparison With Silver Thick-Film Techniques

Copper electroplating is investigated and compared with common silver printing techniques for the front metallization of silicon heterojunction solar cells. We achieve smaller feature sizes by electroplating, significantly reducing optical shadowing losses and improving cell efficiency by 0.4% absolute. A detailed investigation of series resistance contributions reveals that, at maximum power point, a significant part of the lateral charge-carrier transport occurs inside the crystalline bulk, rather than exclusively in the front transparent conductive oxide. This impacts optimization for the front-grid design. Using advanced electron microscopy, we study the inner structure of copper-plated fingers and their interfaces. Finally, a cell efficiency of 22.4% is demonstrated with copper-plated front metallization.

In situ Reduction and Oxidation of Nickel from Solid Oxide Fuel Cells in a Transmission Electron Microscope

Environmental transmission electron microscopy was used to characterize in situ the reduction and oxidation of nickel from a Ni/YSZ solid oxide fuel cell anode support between 300-500°C. The reduction is done under low hydrogen pressure. The reduction initiates at the NiO/YSZ interface, then moves to the center of the NiO grain. At higher temperature the reduction occurs also at the free NiO surface and the NiO/NiO grain boundaries. The growth of Ni is epitaxial on its oxide. Due to high volume decrease, nanopores are formed during reduction. During oxidation, oxide nanocrystallites are formed on the nickel surface. The crystallites fill up the nickel porosity and create an inhomogeneous structure with remaining voids. This change in structure causes the nickel oxide to expand during a RedOx cycle.

Nanocrystalline Silicon Carrier Collectors for Silicon Heterojunction Solar Cells and Impact on Low-Temperature Device Characteristics

Silicon heterojunction solar cells typically use stacks of hydrogenated intrinsic/doped amorphous silicon layers as carrier selective contacts. However, the use of these layers may cause parasitic optical absorption losses and moderate fill factor (FF) values due to a high contact resistivity. In this study, we show that the replacement of doped amorphous silicon with nanocrystalline silicon is beneficial for device performance. Optically, we observe an improved short-circuit current density when these layers are applied to the front side of the device. Electrically, we observe a lower contact resistivity, as well as higher FF. Importantly, our cell parameter analysis, performed in a temperature range from -100 to +80 °C, reveals that the use of hole-collecting p-type nanocrystalline layer suppresses the carrier transport barrier, maintaining FF s in the range of 70% at -100 °C, whereas it drops to 40% for standard amorphous doped layers. The same analysis also reveals a saturation onset of the open-circuit voltage at -100 °C using doped nanocrystalline layers, compared with saturation onset at -60 °C for doped amorphous layers. These findings hint at a reduced importance of the parasitic Schottky barrier at the interface between the transparent electrodes and the selective contact in the case of nanocrystalline layer implementation.

Hydrogen plasma treatment for improved conductivity in amorphous aluminum doped zinc tin oxide thin films

Improving the conductivity of earth-abundant transparent conductive oxides (TCOs) remains an important challenge that will facilitate the replacement of indium-based TCOs. Here, we show that a hydrogen (H2)-plasma post-deposition treatment improves the conductivity of amorphous aluminum-doped zinc tin oxide while retaining its low optical absorption. We found that the H2-plasma treatment performed at a substrate temperature of 50 °C reduces the resistivity of the films by 57% and increases the absorptance by only 2%. Additionally, the low substrate temperature delays the known formation of tin particles with the plasma and it allows the application of the process to temperature-sensitive substrates.

Fully textured monolithic perovskite/silicon tandem solar cells with 25.2% power conversion efficiency

Tandem devices combining perovskite and silicon solar cells are promising candidates to achieve power conversion efficiencies above 30% at reasonable costs. State-of-the-art monolithic two-terminal perovskite/silicon tandem devices have so far featured silicon bottom cells that are polished on their front side to be compatible with the perovskite fabrication process. This concession leads to higher potential production costs, higher reflection losses and non-ideal light trapping. To tackle this issue, we developed a top cell deposition process that achieves the conformal growth of multiple compounds with controlled optoelectronic properties directly on the micrometre-sized pyramids of textured monocrystalline silicon. Tandem devices featuring a silicon heterojunction cell and a nanocrystalline silicon recombination junction demonstrate a certified steady-state efficiency of 25.2%. Our optical design yields a current density of 19.5 mA cm−2 thanks to the silicon pyramidal texture and suggests a path for the realization of 30% monolithic perovskite/silicon tandem devices.An optimized two-step deposition process allows the formation of uniform layers of metal halide perovskites on textured silicon layers, enabling tandem silicon/perovskite solar cells with improved optical design and efficiency.

Silicon-Rich Silicon Carbide Hole-Selective Rear Contacts for Crystalline-Silicon-Based Solar Cells

The use of passivating contacts compatible with typical homojunction thermal processes is one of the most promising approaches to realizing high-efficiency silicon solar cells. In this work, we investigate an alternative rear-passivating contact targeting facile implementation to industrial p-type solar cells. The contact structure consists of a chemically grown thin silicon oxide layer, which is capped with a boron-doped silicon-rich silicon carbide [SiCx(p)] layer and then annealed at 800-900 °C. Transmission electron microscopy reveals that the thin chemical oxide layer disappears upon thermal annealing up to 900 °C, leading to degraded surface passivation. We interpret this in terms of a chemical reaction between carbon atoms in the SiCx(p) layer and the adjacent chemical oxide layer. To prevent this reaction, an intrinsic silicon interlayer was introduced between the chemical oxide and the SiCx(p) layer. We show that this intrinsic silicon interlayer is beneficial for surface passivation. Optimized passivation is obtained with a 10-nm-thick intrinsic silicon interlayer, yielding an emitter saturation current density of 17 fA cm-2 on p-type wafers, which translates into an implied open-circuit voltage of 708 mV. The potential of the developed contact at the rear side is further investigated by realizing a proof-of-concept hybrid solar cell, featuring a heterojunction front-side contact made of intrinsic amorphous silicon and phosphorus-doped amorphous silicon. Even though the presented cells are limited by front-side reflection and front-side parasitic absorption, the obtained cell with a Voc of 694.7 mV, a FF of 79.1%, and an efficiency of 20.44% demonstrates the potential of the p+/p-wafer full-side-passivated rear-side scheme shown here.

Low-temperature plasma-deposited silicon epitaxial films: Growth and properties

Low-temperature (≤200 °C) epitaxial growth yields precise thickness, doping, and thermal-budget control, which enables advanced-design semiconductor devices. In this paper, we use plasma-enhanced chemical vapor deposition to grow homo-epitaxial layers and study the different growth modes on crystalline silicon substrates. In particular, we determine the conditions leading to epitaxial growth in light of a model that depends only on the silane concentration in the plasma and the mean free path length of surface adatoms. For such growth, we show that the presence of a persistent defective interface layer between the crystalline silicon substrate and the epitaxial layer stems not only from the growth conditions but also from unintentional contamination of the reactor. Based on our findings, we determine the plasma conditions to grow high-quality bulk epitaxial films and propose a two-step growth process to obtain device-grade material.

Measurements of local chemistry and structure in Ni(O)–YSZ composites during reduction using energy-filtered environmental TEM

Energy-filtered transmission electron microscopy images are acquired during the reduction of a NiO-YSZ composite in H2 up to 600 °C. Temperature-resolved quantitative information about both chemistry and structure is extracted with nm spatial resolution from the data, paving the way for the development of detailed reduction models.

Tilt-less 3-D electron imaging and reconstruction of complex curvilinear structures

The ability to obtain three-dimensional (3-D) information about morphologies of nanostructures elucidates many interesting properties of materials in both physical and biological sciences. Here we demonstrate a novel method in scanning transmission electron microscopy (STEM) that gives a fast and reliable assessment of the 3-D configuration of curvilinear nanostructures, all without needing to tilt the sample through an arc. Using one-dimensional crystalline defects known as dislocations as a prototypical example of a complex curvilinear object, we demonstrate their 3-D reconstruction two orders of magnitude faster than by standard tilt-arc TEM tomographic techniques, from data recorded by selecting different ray paths of the convergent STEM probe. Due to its speed and immunity to problems associated with a tilt arc, the tilt-less 3-D imaging offers important advantages for investigations of radiation-sensitive, polycrystalline, or magnetic materials. Further, by using a segmented detector, the total electron dose is reduced to a single STEM raster scan acquisition; our tilt-less approach will therefore open new avenues for real-time 3-D electron imaging of dynamic processes.

Amorphous gallium oxide grown by low-temperature PECVD

Owing to the wide application of metal oxides in energy conversion devices, the fabrication of these oxides using conventional, damage-free, and upscalable techniques is of critical importance in the optoelectronics community. Here, the authors demonstrate the growth of hydrogenated amorphous gallium oxide (a-GaOx:H) thin-films by plasma-enhanced chemical vapor deposition (PECVD) at temperatures below 200 °C. In this way, conformal films are deposited at high deposition rates, achieving high broadband transparency, wide band gap (3.5–4 eV), and low refractive index (1.6 at 500 nm). The authors link this low refractive index to the presence of nanoscale voids enclosing H2, as indicated by electron energy-loss spectroscopy. This work opens the path for further metal-oxide developments by low-temperature, scalable and damage-free PECVD processes.