R. A. Ramlee

An analysis of low pass filter using bowtie Defected Ground Structure (DGS) at 10 GHz for radar application

This paper describes the design of Low-pass filter using bowtie Defected Ground Structure (DGS). The designing of low-pass filter begins from lumped element in which the filter will be built using capacitors and inductors before converted to open and short circuited stub. The low-pass filter using bowtie Defected Ground Structure (DGS) is required to operate at 10 GHz for radar application. As a comparison, the design of different size and quantity of bowtie Defected Ground Structure (DGS) were analyzed to identify the better performance of the low-pass filter. The design of this filter had been simulated by using schematic and EM Simulation in Agilent Advanced Design System (ADS) software.

Comparison on IV characteristics analysis between Silicon and InGaAs PIN photodiode

This paper presents comparison on IV Characteristics analysis between Silicon and InGaAs PIN Photodiode. PIN Photodiode is a structure that is consists of positive region, intrinsic region and negative region (PIN). The thick intrinsic regions are a difference to a normal PN Photodiode. PIN Photodiodes practical as Photodetectors, Attenuators and Radio frequency (RF) switches. The simple, low cost yet rugged structure of PIN Photodiodes is an advantage in Photodiode technology. These papers are separated in several section consists of the basic principle, characteristics, advantages and the recent technologies of PIN Photodiode. There will be a specific section on comparison between Indium Gallium Arsenide (InGaAs) PIN Photodiode with Silicon (Si) PIN Photodiode.

Variable junction temperature analysis in Silicon IMPATT diode

This paper proposed a design of SDR Silicon IMPATT diode in lateral structure and analyzes the variable junction temperature analysis in Silicon IMPATT diode. The simulation on the effect of junction temperature on electric field and carrier mobility is carried out for Si SDR IMPATT structure designed at D-band frequency. Result show that electric field increases while the carrier mobility decreases in higher junction temperature.

An analysis of a UWB ice-cream cone antenna for UWB communication

In this paper, a single UWB Ice Cream Cone Antenna for Ultra Wide-Band (UWB) antenna have been proposed. This antenna was fabricated on FR4 substrate. The effect of varying parameter for length of rectangular has been studied. This antenna occupies the entire 3.1GHz to 10.6GHz spectrum band. The antenna characteristic suggested that return loss must below than -10dB, VSWR less than 2 throughout the entire band, lightweight planar profile and omnidirectional radiation pattern. The best antenna performance was obtained atthe size of 40 × 25mm2. The designs are simulated by using CST Microwave Studio Simulation and the measurement are successfully achieves UWB spectrum band requirement. Finally, an analysis and comparison between simulation result and measurement result has been conducted to investigate the effect of varying parameter for length of rectangular on antenna performance.

Variable Depletion Region in CMOS PN Photodiode for I–V Characteristic Analysis

In this paper, CMOS PN photodiode will be design and analyze for the application at 5 GHz optical communication. The paper will be divided in several section; the theory of CMOS PN photodiode and design with analysis of I–V characteristics of PN photodiode. A better understanding of the operation will be investigated through this. The PN photodiode will be design using Silvaco TCAD and will be characterize and experimental in I–V Characteristic. The effects of I–V characteristic will be analyzed in term of changes the width and light. Further understanding of I–V characteristic will be presents in this paper.

Variable Intrinsic Region in CMOS PIN Photodiode for I–V Characteristic Analysis

In this paper presented an investigation on I–V characteristic for CMOS PIN Photodiode. PIN diodes are widely used in optics and microwave circuits as it acts as a current controlled resistor at these frequencies. PIN diode performance is greatly influenced by the geometrical size of the device, especially in the intrinsic region. Two different I-layer thickness of PIN diode structure has been designed using Sentaurus Technology Computer Aided Design (TCAD) tools. The I-layer thickness (or width) is varied from 4 to 8 µm in order to investigate its effects on the current-voltage (I–V) characteristics. These structures were design based on CMOS process.

Comparison of intrinsic width for InGaAs PIN photodiode

This paper presents comparison on the different intrinsic width of InGaAs PIN Photodiode. Intrinsic region is a pure semiconductor without any significant dopant species present. In this paper, it will present two different sizes of the intrinsic region for InGaAs PIN Photodiode. This photodiode will be designed by using Atlas Silvaco TCAD Tools. From the structure, the characteristics of the photodiode will be analyzed. The I-layer thickness (or width) is varied from 5μm × 20μm to 8μm × 20μm in order to investigate its effects on the current-voltage (IV) characteristics. These papers are separated into several sections consists of the basic principle, characteristics, advantages and the recent technologies of PIN Photodiode. There will be a specific section on comparison between different intrinsic widths of InGaAs PIN Photodiode.

The effect of different levels of continuous tones vibrant on focus ability in teenagers

This study investigated the effect of continuous tones vibrant on focus ability among teenagers. Three vibrant levels as perceived as Medium, Loud but Comfortable and Very Loud were examined. In 6 subjects, the results showed that the amplitude of N1 waves have reduced significantly when stimulated by Medium sound as compared to Loud but Comfortable and Very Loud stimulation. Insignificant reduction of N1 amplitude was increased as the tones vibrant changed from Loud but Comfortable to Very Loud stimulation. In particular, the Very Loud stimulation evoked constant amplitude of N1 throughout stimulation in most of the subjects. This shows that a high vibrant of tones project high focus ability. The finding could be used for a basis of developing an awareness system or a diagnostic for mental disorder such as schizophrenia.

Bending optical waveguide investigation for electromagnetic field radiation and propagation application

This paper presents the analysis of bending optical waveguide based on effective refractive index and beta propagation constant. The various sample of core waveguide size such as 3 ×3, 7×7 and 9×9 is taken and measure with radius curvature of optical waveguide. The data collection based on Maxwell equation derivation and modeling electromagnetic field as a engine behind of graphical user interface (GUI) simulation. The material that used is GaAs for core refractive index, while material GaAlAs for upper and lower refractive index. The structure for this Bending Waveguide is set at 1.55 μm and result of optimization analysis of waveguide according to a certain parameter may help in Telecommunication application design and modeling such as optical fiber, wave propagation, and electromagnetic field radiation for angular field.

An analysis of vital sign using microwave Doppler technique

This paper presents a system for hearbeat detection using microwave Doppler technique. Using a vector network analyzer, a microwave system is tested for the detection of the heartbeat signal at a distance of 1 feet from a person. The proposed system shows the ability of detecting the heartbeat signals with the possibility of tuning the radiated power. Measurements are performed at 10dbm, 0dbm, -10dbm, -15dbm and -25dbm. Based on measurements perform for respiration and heart beatings, a signal representing the cardiopulmonary activity is presented. The heartbeat rate and heart rate are extracted from the signal using wavelet and classic filters.