R. Bouchakour

Extraction of Fowler-Nordheim parameters of thin SiO/sub 2/ oxide film including polysilicon gate depletion: validation with an EEPROM memory cell

The simulation of EEPROM memory characteristics is fundamental to the design and optimization of low-power non-volatile memory products. This paper presents a new method for extraction of Fowler-Nordheim parameters in a thin (polysilicon-gate) SiO/sub 2/ oxide. It consists of extraction of the oxide thickness from MOS capacitance characteristics including polysilicon-gate depletion. Then, we use the oxide thickness to estimate the electric field for the extraction of the FN current parameters.

A new approach for the electrothermal modeling of the power bipolar transistor

We have developed an electrothermal model for the bipolar power transistor, implemented in the Saber simulator, in which the devices temperature becomes an interactive variable during the simulation. Two approaches for the electrothermal coupling are compared and discussed. The accuracy of the model is appreciated with the electrical and thermal characterization of a NP/spl nu/N power bipolar transistor using the Iccap-Saber interface.<<ETX>>

A VDMOS transistor model taking into account the thermoelectrical interactions

One of the most important problems in the field of power electronics is heat dissipation. During the last ten years, different models of power MOSFET transistors (VDMOS transistors) have been developed but only a few of them take the temperature dynamically into account. A constant temperature for the model can distort the electrical behavior of the device. In this paper we propose an analytical one-dimensional thermoelectrical model for the VDMOS transistor, implemented in the SABER circuit simulator, in which the devices temperature becomes an interactive variable during the simulation. This model is built on a combination of an electrical network with a thermal network. The accuracy of the model is appreciated with a complete characterization, and its capabilities are explored by a circuit example.<<ETX>>

An analytical damaged submicron MOSFET model for CAD applications

This paper presents a generalized version of the MOS charge-sheet model which physically incorporates uniform and/or nonuniform distribution of defects along the channel into the analysis, The model has been applied to study the effect of the localized hot-carrier degradation near the drain on the electrical behavior of a short channel nMOS transistor. A good fit has been achieved between the experimental data and the simulation. In addition, two circuit simulation examples have been examined to qualitatively verify the validity of the model.

Modeling and simulation of the electrothermal behavior of the power bipolar transistor

We have developed a one-dimensional electrothermal model for the bipolar power transistor, implemented in the SABER circuits simulator, in which the devices temperature becomes an interactive variable during the simulation. The accuracy of the model is appreciated with the electrical and thermal characterization of a NPvN power bipolar transistor using the IC-CAP-SABER interface. The internal behavior of the transistor during transients is shown up through a switching simulation.<<ETX>>

Modeling and simulation of homogeneous degradation for N-channel MOSFETS

Abstract In this work, the effects of the degradation generated by homogeneous hot-electron injection in a one-dimensional model of current-voltage characteristics for short-channel MOSFETs are introduced. A distributed charge model, implemented in the SABER simulator is used. Simulation results obtained for n-MOS transistors demonstrate good agreement with the experimental data for interface state density inferior to 3 × 10 11 cm −2 eV −1 . The samples are degraded by homogeneous electron photoinjection and the interface trap density is performed by the pumping charge method.

Study of the influence of temperature on the behavior of the VDMOS transistor

This paper presents an accurate one-dimensional device model for the simulation of power MOSFET transistors, taking into account the effects of temperature as an interactive variable during simulation.<<ETX>>

One-dimensional model of the power bipolar transistor with thermoelectrical interactions for circuit applications

We have developed an electrothermal model for the bipolar power transistor, implemented in the Saber circuit simulator, in which the devices temperature becomes an interactive variable during the simulation. Two approaches for the electrothermal coupling are compared and discussed. The accuracy of the model is appreciated with the electrical and thermal characterization of a NPvN power bipolar transistor using the ICCAP-Saber interface.

Modeling of Power Mosfet and Bipolar Transistors Taking into Account the Thermoelectrical Interactions

We have developed analytical one-dimensional thermoelectrical models for the power mosfet and bipolar transistors, implemented in the Saber circuit simulator, in which the device’s temperature becomes an interactive variable during the simulation. The accuracy of the models is appreciated with electrical and thermal characterizations, and validation circuits.

Simulation of transient behavior of an EEPROM cell using a semi-quantum model for tunneling current

A semi-quantum model of tunnel current through N-polysilicon/Oxide/N/sup +/-silicon structure is implemented in order to simulate transient behavior of an EEPROM memory cell. This model depends on the sheet charge, electron impact frequency on the interface and tunneling probability. A comparison of this model with Fowler-Nordheim model is given.