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Dive into the research topics where Raban Held is active.

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Featured researches published by Raban Held.


IEEE Transactions on Industrial Electronics | 2001

SiC devices for advanced power and high-temperature applications

Wolfgang Wondrak; Raban Held; Ekkehard Niemann; Ulrich Schmid

Silicon carbide (SiC) process technology has made rapid progress, resulting in the realization of very promising electronic devices and sensors, enabling advanced solutions in power industry and mobile systems. In particular, for electronics working under harsh environmental conditions, SiC devices reach unprecedented performance. Transfer to production has already started for some applications.


Archive | 2002

Semiconductor component and method for producing the same

Nando Kaminski; Raban Held


Materials Science Forum | 1998

SiC Merged p-n/Schottky Rectifiers for High Voltage Applications

Raban Held; Nando Kaminski; E. Niemann


Archive | 1994

Semiconductor component with embedded fixed charges to provide increased high breakdown voltage

Wolfgang Wondrak; Raban Held


Archive | 1997

Semiconductor device with alternate p-n and Schottky junctions

Nando Kaminski; Raban Held


Archive | 1995

Vertical power field effect transistor

Werner Loose; Jacek Korec; Ekkehard Niemann; Heinrich Schlangenotto; Raban Held


Materials Science Forum | 2000

SiC-Power Rectifiers

Raban Held; M. Füllmann; E. Niemann


Archive | 1995

Silicon carbide device passivation with reduced field strength and barrier current

Frank Wischmeyer; Jacek Korec; Raban Held


Archive | 1997

Semiconductor component with foreign atoms introduced by ion implantation and process for producing the same

Wolfgang Wondrak; Vera Lauer; Nando Kaminski; Raban Held; Gerhard Pensl; Scott T. Sheppard


Archive | 1996

Semiconductor structure having one or more lateral, high-blocking semiconductor components

Wolfgang Wondrak; Raban Held; Erhard Stein; Horst Neubrand

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Gerhard Pensl

University of Erlangen-Nuremberg

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