Ralf Reuter

An RCP Packaged Transceiver Chipset for Automotive LRR and SRR Systems in SiGe BiCMOS Technology

We present a transceiver chipset consisting of a four channel receiver (Rx) and a single-channel transmitter (Tx) designed in a 200-GHz SiGe BiCMOS technology. Each Rx channel has a conversion gain of 19 dB with a typical single sideband noise figure of 10 dB at 1-MHz offset. The Tx includes two exclusively-enabled voltage-controlled oscillators on the same die to switch between two bands at 76-77 and 77-81 GHz. The phase noise is -97 dBc/Hz at 1-MHz offset. On-wafer, the output power is 2 × 13 dBm. At 3.3-V supply, the Rx chip draws 240 mA, while the Tx draws 530 mA. The power dissipation for the complete chipset is 2.5 W. The two chips are used as vehicles for a 77-GHz package test. The chips are packaged using the redistribution chip package technology. We compare on-wafer measurements with on-board results. The loss at the RF port due to the transition in the package results to be less than 1 dB at 77 GHz. The results demonstrate an excellent potential of the presented millimeter-wave package concept for millimeter-wave applications.

On-wafer microwave measurement setup for investigations on HEMTs and high-T/sub c/ superconductors at cryogenic temperatures down to 20 K

An on-wafer measurement setup for the microwave characterization of HEMTs and high-T/sub c/ superconductors at temperatures down to 20 K is presented. Both S-parameter and noise measurements can be performed in the frequency range from 45 MHz to 40 GHz and 2 GHz to 18 GHz, respectively, using standard calibration techniques and commercial microwave probe tips. Microwave measurements on a pseudomorphic FET and an AlGaAs-GaAs HEMT as well as investigations on a superconducting filter are presented to demonstrate the efficiency of the developed system. >

A 77 GHz (W-band) SiGe LNA with a 6.2 dB Noise Figure and Gain Adjustable to 33 dB

This paper presents a state-off the art low-noise SiGe-amplifier (LNA) for the frequency range from 75 up to 85 GHz integrated in a 0.18mum BiCMOS technology (John et al., 2002 and 2006). The LNA shows noise figures of about 6.2 dB at 77 GHz and simultaneously extremely high gain adjustable from nearly 0 dB up to 33 dB at 77 GHz. The possibility to fully disable the LNA completes the functionality of the presented circuit. To the knowledge of the author this combination demonstrates the best performance in noise and gain ever reported for a commercial BiCMOS process (Floyd, 2004 and 2005). Microstrip transmission lines in combination with integrated MIM capacitors are used as matching elements. The SiGe(C)-HBT demonstrates a typical maximum fT and fmax performance of approx. 200 GHz, respectively

Characterization and Modeling of Wire Bond Interconnects up to 100 GHz

This paper presents a model for single and multiple wire bond interconnects for the frequency range from 200 MHz up to 100 GHz, usable in agilents advanced design system (ADS). Test structures for on-wafer s-parameter characterization have been developed. Equivalent circuits for single- and multiple wire bond connections are derived, respectively. The small-signal elements of the equivalent circuit are based on physical parameters and scalable with the bond wire distance and length. The model demonstrates an excellent agreement with measurements in broad frequency range

Novel Collector Structure Enabling Low-Cost Millimeter-Wave SiGe:C BiCMOS Technology

A millimeter-wave selective-epi, SiGe:C HBT is described, utilizing a novel, low-cost collector construction. A cutoff frequency (fT) of 200 GHz and a maximum oscillation frequency (fMAX) of 300 GHz is achieved using a self-aligned selective-epi base structure. For a SiGe:C HBT, this is the highest known fMAX obtained without the use of buried layer or deep trench isolation.

Fully Integrated SiGe-BiCMOS Receiver(RX) and Transmitter(TX) Chips for 76.5 GHz FMCW Automotive Radar Systems Including Demonstrator Board Design

Advancements in SiGe device development enable the realization of 76.5 GHz FMCW automotive long range radar systems using relatively low-cost silicon technology. This paper presents fully integrated receiver (RX) and transmitter (TX) circuits for wide temperature range operations. The TX chips consists of a VCO with two stage power amplifier, frequency divider chain, power detector circuit and operational amplifier to on-chip compensate the temperature drift of the center frequency. The RX chips is based on a 38.25 GHz doubler, a 76.5 GHz LNA, a passive balun, a fully balanced mixer and IF buffer. Also the integration and combination with planar patched antennas on a demonstrator board was discussed.

Unified analytical expressions for transimpedance and equivalent input noise current of optical receivers

Unified analytical expressions are derived for calculating the equivalent input noise current and transimpedance of optical receiver front ends with arbitrary input matching network topologies. To be independent of any transistor or amplifier type, noise parameters are used to describe the noise behavior of the active device. A new characteristic frequency-dependent value, called photodiode intrinsic conductance, is introduced. This figure-of-merit allows one to compare the achievable equivalent input noise current and transimpedance of different types of photodiodes independently of amplifier type and geometry.

SiGe technology and circuits for automotive radar applications

Recent advancements in SiGe device development enable the realization of 77GHz automotive radar systems using relatively low-cost silicon technology. This paper will discuss technology requirements for the radar design and also present examples of receiver and transmitter circuit implementations.

UWB car attenuation measurements

In the European regulatory domain the CEPT ECC working group TG3 on ultra wideband (UWB) has developed a broad framework for the regulation of the deployment of UWB devices in Europe. In the first draft of the regulation the deployment of UWB will be strictly restricted to indoor usage, prohibiting usage in cars, trains and planes in order to guarantee maximum interference mitigation towards incumbent services. Thus planned deployment of UWB in cars for different kind of application like sensor or car multimedia communications application would be prohibited under the existing regulation. The attenuation measurements presented in this paper should pave the way towards a less restrictive definition of the indoor usage model including the in-car usage. The measurements have been carried out at the premises of the Joint European Research Center (JRC) in Ispra, Italy in the European Microwave Signature Laboratory (EMSL). As a main result of the measurements it can be seen that the average worst case attenuation in the frequency range of interest of the evaluated cars is in the range of the assumed indoor to outdoor attenuation of 10 dB to 12 dB assumed in the CEPT ECC Report 64. These results are inline with the ITU recommendation ITU-R-P 679-1.

SiGe 77GHz Automotive Radar Technology

Recent advancements in SiGe device development enable the realization of 77GHz automotive long range radar systems using relatively low-cost silicon technology. This paper will discuss technology requirements for the radar design and present examples of receiver and transmitter circuit implementations.