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Featured researches published by Ralph Mohr.


Journal of Non-crystalline Solids | 1987

Crucial parameters and device physics of amorphous silicon alloy tandem solar cells

Jeffrey Yang; T. Glatfelter; Randall Ross; Ralph Mohr; Jeffrey Fournier; Subhendu Guha

Abstract We have previously shown that tandem solar cells exhibit higher efficiency and better long-term stability than single junction cells. We shall discuss crucial parameters for achieving high performance solar cells and certain aspects of device physics associated with the tandem structure. We will present data on what effect changes in intrinsic layer thicknesses, p + and n + layer thicknesses, back reflector quality, and solar spectral variation have on these multijunction devices.


MRS Proceedings | 1986

Status of Fluorinated Amorphous Silicon Alloy Multi-Junction Solar Cells

Jeffrey Yang; Robert Ross; Ralph Mohr; Jeffrey Fournier

We present in this paper updated solar cell performance data on fluorinated amorphous silicon and fluorinated amorphous silicon-germanium alloys. We have achieved a 9.7% conversion efficiency for a singlejunction device using a-Si:Ge:F:H alloy having an optical band gap of 1.5 eV. We have also achieved 12.5% and 13.0% efficiencies, respectively, for dual-band-gap tandem and triple devices using a-Si:F:H and a-Si:Ge:F:H alloys. These represent the highest values reported to date for their respective configurations. Multi-junction solar cells exhibit excellent stability not only in terms of light-induced effect but also in terms of prolonged heating at elevated temperatures.


MRS Proceedings | 1987

Physics of High Efficiency Multijunction Solar Cells

Jeffrey Yang; Robert Ross; Ralph Mohr; Jeffrey Fournier

We have shown that high efficiency solar cells can be obtained by incorporating materials of different band gaps in a multijunction configuration. This configuration gives rise to high efficiency due to spectrum splitting as well as superior stability due to thin top cells. We have fabricated multijunction solar cells and acheived a 13% conversion efficiency using 1.7eV a-Si:F:H and 1.5 eV a-Si:Ge:F:H materials in a three-cell triple configuration. This device was deposited onto a stainless steel substrate coated with a back reflector; it also incorporates a microcrystalline p + layer. The physical properties of each of the solar cell layers and their role in the device physics of a high efficiency solar cell will be described.


Archive | 1984

Narrow band gap photovoltaic devices with enhanced open circuit voltage

Ralph Mohr; Vincent D. Cannella


Archive | 1984

Boron doped semiconductor materials and method for producing same

Chi Chung Yang; Ralph Mohr; Stephen J. Hudgens; Annette G. Johncock; Prem Nath


MRS Proceedings | 1989

Amorphous Silicon-Germanium Alloy Solar Cells with Profiled Band Gaps

Jeffrey Yang; Randall Ross; T. Glatfelter; Ralph Mohr; Subhendu Guha


Archive | 1987

Status of fluorinated amorphous silicon-germanium alloys and multijunction devices

Robert Ross; Ralph Mohr; Jeffrey Fournier; Jeffrey Yang


Archive | 1986

Method for the microwave fabrication of boron doped semiconductor materials

Chi C. Yang; Ralph Mohr; Stephen J. Hudgens; Annette G. Johncock; Prem Nath


Archive | 1985

Improved boron doped semiconductor materials and method for producing

Chi Chung Yang; Ralph Mohr; Stephen J. Hudgens; Annette G. Johncock; Prem Nath


Archive | 1985

High efficiency solar cells using amorphous silicon and amorphous silicon-germanium based alloys

Jeffrey Yang; Robert Ross; Ralph Mohr; Jeffrey Fournier

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Jeffrey Yang

Energy Conversion Devices

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Robert Ross

Energy Conversion Devices

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Prem Nath

Energy Conversion Devices

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Chi Chung Yang

Energy Conversion Devices

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Randall Ross

Energy Conversion Devices

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Subhendu Guha

Energy Conversion Devices

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