Ren Min

Above 700 V superjunction MOSFETs fabricated by deep trench etching and epitaxial growth

Silicon superjunction power MOSFETs were fabricated with deep trench etching and epitaxial growth, based on the process platform of the Shanghai Hua Hong NEC Electronics Company Limited. The breakdown voltages of the fabricated superjunction MOSFETs are above 700 V and agree with the simulation. The dynamic characteristics, especially reverse diode characteristics, are equivalent or even superior to foreign counterparts.

A new short-anoded IGBT with high emission efficiency

A novel short-anoded insulated-gate bipolar transistor (SA-IGBT) with double emitters is proposed. At the on-state, the new structure shows extraordinarily high emission efficiency. Moreover, with a short-contacted anode, it further enhances the hole emission efficiency because of the crowding of the electrons. The forward voltage drop VF of this structure is 1.74 V at a current density 100 of A/cm2. Compared to the conventional NPT IGBT (1.94 V), segment-anode IGBT (SA-NPN 2.1 V), and conventional SA-IGBT (2.33 V), VF decreased by 10%, 17% and 30%, respectively. Furthermore, no NDR has been detected comparing to the SA-IGBT. At the off-state, there is a channel for extracting excessive carriers in the drift region. The turn-off loss Eoff of this proposed structure is 8.64 mJ/cm2. Compared to the conventional NPT IGBT (15.3 mJ/cm2), SA-NPN IGBT (12.8 mJ/cm2), and SA-IGBT (12.1 mJ/cm2), Eoff decreased by 43.7%, 32% and 28%, respectively.

A snapback suppressed reverse-conducting IGBT with uniform temperature distribution

A novel reverse-conducting insulated-gate bipolar transistor (RC-IGBT) featuring a floating P-plug is proposed. The P-plug is embedded in the n-buffer layer to obstruct the electron current from flowing directly to the n-collector, which achieves the hole emission from the p-collector at a small collector size and suppresses the snapback effectively. Moreover, the current is uniformly distributed in the whole wafer at both IGBT mode and diode mode, which ensures the high temperature reliability of the RC-IGBT. Additionally, the P-plug acts as the base of the N-buffer/P-float/N-buffer transistor, which can be activated to extract the excessive carriers at the turn-off process. As the the simulation results show, for the proposed RC-IGBT, it achieves almost snapback-free output characteristics with a uniform current density and a uniform temperature distribution, which can greatly increase the reliability of the device.

A novel superjunction MOSFET with improved ruggedness under unclamped inductive switching

The ruggedness of a superjunction metal—oxide semiconductor field-effect transistor (MOSFET) under unclamped inductive switching conditions is improved by optimizing the avalanche current path. Inserting a P-island with relatively high doping concentration into the P-column, the avalanche breakdown point is localized. In addition, a trench type P+ contact is designed to shorten the current path. As a consequence, the avalanche current path is located away from the N+ source/P-body junction and the activation of the parasitic transistor can be effectively avoided. To verify the proposed structural mechanism, a two-dimensional (2D) numerical simulation is performed to describe its static and on-state avalanche behaviours, and a method of mixed-mode device and circuit simulation is used to predict its performances under realistic unclamped inductive switching. Simulation shows that the proposed structure can endure a remarkably higher avalanche energy compared with a conventional superjunction MOSFET.