Renate Hofmann
Infineon Technologies
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Publication
Featured researches published by Renate Hofmann.
IEEE Transactions on Semiconductor Manufacturing | 2008
Werner Robl; Michael Melzl; Berngard Weidgans; Renate Hofmann; Matthias Stecher
High current-carrying capacity and low resistivity are key parameters for power devices. In this paper a copper based terminal metallurgy scheme for wire- and wedge-bonding is described, which improves these properties. The method of choice for depositing thick copper wires is pattern plating. However the plating process has to be optimized in order to get a homogeneous thickness distribution. An electroless coating of NiP, Pd and Au on top of the Cu layers is used as bond interface. This process provides high reliable gold-wire and aluminum-wedge bonds.
Archive | 2014
Renate Hofmann; Carsten Ahrens; Wolfgang Klein; Alexander Glas
Archive | 2004
Matthias Stecher; Renate Hofmann; Joerg Busch
Archive | 2006
Matthias Stecher; Renate Hofmann; Joerg Busch
Archive | 2003
Jörg Busch; Renate Hofmann; Matthias Stecher
Archive | 2003
Jörg Busch; Renate Hofmann; Matthias Stecher
Archive | 2013
Klaus Elian; Jens Pohl; Horst Theuss; Renate Hofmann; Alexander Glas; Carsten Ahrens
Archive | 2011
Carsten Ahrens; Alexander Glas; Renate Hofmann; Wolfgang Klein
Archive | 2011
Carsten Ahrens; Alexander Glas; Renate Hofmann; Wolfgang Klein
Archive | 2003
Jörg Busch; Renate Hofmann; Matthias Stecher
