Ritu Sodhi

New trench MOSFET technology for DC-DC converter applications

ew trench MOSFET technology presented in this paper includes several major technological breakthroughs that significantly improved device performance in DC-DC converter applications. The figure of merit R*AA has reached as low as 12 mOhm.mm/sup 2/ for a 30 VN SyncFET and R*Qg is only 75 is only 75 mOhm.nC for a 30VN Control FET, one of the lowest reported.

Flip chip power MOSFET: a new wafer scale packaging technique

This paper describes the first flip chip power MOSFET device with the lowest R/sub DSON/ per footprint area in the industry. This device, with the same electrical characteristics as an SO8 packaged device, takes only 30% of the SO8 footprint. R/sub Si/ /spl times/ Footprint Area as low as 59 mOhm.mm/sup 2/ were achieved for bi-directional device and 98 mOhm.mm/sup 2/ for single device at 4.5 V/sub GS/, a 4-6 times reduction compared to regular packaged MOSFET. The typical applications for these parts include battery charging and load switching in cell phones and laptops.