Robert Joseph Strain
Bell Labs
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Featured researches published by Robert Joseph Strain.
IEEE Transactions on Electron Devices | 1974
Robert Harold Krambeck; Robert Joseph Strain; George Elwood Smith; K.A. Pickar
A new kind of charge-coupled device, the conductively connected charge-coupled device (C4D) has been built and operated. This device is formed by providing self-aligned, source-drain diffusions (or implants) between adjacent, refractory electrodes of a two-phase, ion implanted-barrier CCD. These implants eliminate the inherently unstable exposed channel region presently found in CCDs with coplanar gates, without resorting to overlapping gates. Shift registers ranging from 16 to 128 b in length were evaluated and in spite of low mobilities (80 cm2/V.s) and low barrier heights (2-3 V), incomplete transfer losses of 0.2 percent per transfer were measured at 1 MHz clock frequency. Fabrication has been demonstrated to be quite compatible with p-channel refractory gate IGFET technology, and because the sensitive interelectrode region of the C4D is heavily doped, these devices should show the same reliability as conventional circuits made with the same technology.
Archive | 1980
George Elwood Smith; Robert Joseph Strain
Archive | 1974
George Elwood Smith; Robert Joseph Strain
Archive | 1974
Donald Jack Silversmith; Robert Joseph Strain
Archive | 1969
Robert Harold Krambeck; Peter Theodore Panousis; Robert Joseph Strain
Archive | 1973
Robert Joseph Strain; Robert Henry Walden
Archive | 1973
Robert Harold Krambeck; Robert Joseph Strain
Archive | 1974
Robert Joseph Strain; K.K. Thornber
Archive | 1974
Donald Jack Silversmith; Robert Joseph Strain
Archive | 1974
Robert Harold Krambeck; Robert Joseph Strain