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Dive into the research topics where Robert T. Graff is active.

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Featured researches published by Robert T. Graff.


Journal of Vacuum Science and Technology | 2000

Novel proton exchange membrane thin-film fuel cell for microscale energy conversion

Jeffrey D. Morse; Alan F. Jankowski; Robert T. Graff; Jeffrey P. Hayes

Thin-film, proton exchange membrane fuel cells are developed using photolithographic patterning, physical vapor deposition, and spin-cast deposition techniques. In this study, micrometer-thick layers of nickel (Ni) and platinum (Pt) electrodes, as well as the proton conducting electrolyte layer of perfluoronated sulfonic acid, are synthesized. The anode layer is conductive to pass the electric current and provides mechanical support to the electrolyte and cathode layer that enables combination of the reactive gases. The morphology desired for both the anode and cathode layers facilitates generation of maximum current density from the fuel cell. For these purposes, the parameters of the deposition process and post-deposition patterning are optimized for continuous porosity across both electrode layers. The power output generated through current–voltage measurement is characterized at various temperatures in the range of 60–90 °C using dilute (4%) hydrogen fuel.


Applied Physics Letters | 2008

6:1 aspect ratio silicon pillar based thermal neutron detector filled with B10

Rebecca J. Nikolic; Adam M. Conway; C. E. Reinhardt; Robert T. Graff; T. F. Wang; Nirmalendu Deo; C. L. Cheung

Current helium-3 tube based thermal neutron detectors have shortcomings in achieving simultaneously high efficiency and low voltage while maintaining adequate fieldability performance. By using a three-dimensional silicon p-i-n diode pillar array filled with boron-10 these constraints can be overcome. The fabricated pillar structured detector reported here is composed of 2μm diameter silicon pillars with a 4μm pitch and height of 12μm. A thermal neutron detection efficiency of 7.3+∕−0.6% and a neutron-to-gamma discrimination of 105 at 2V reverse bias were measured for this detector. When scaled to larger aspect ratio, a high efficiency device is possible.


ieee nuclear science symposium | 2007

Fabrication of Pillar-structured thermal neutron detectors

Rebecca J. Nikolic; Adam M. Conway; C. E. Reinhardt; Robert T. Graff; T. F. Wang; Nirmalendu Deo; Chin Li Cheung

Pillar detector is an innovative solid state device structure that leverages advanced semiconductor fabrication technology to produce a device for thermal neutron detection. State-of-the-art thermal neutron detectors have shortcomings in achieving simultaneously high efficiency, low operating voltage while maintaining adequate fieldability performance. By using a 3-dimensional silicon PIN diode pillar array filled with isotopic boron 10, (10B) a high efficiency device is theoretically possible. The fabricated pillar structures reported in this work are composed of 2 mum diameter silicon pillars with a 4 mum pitch and pillar heights of 6 and 12 mum. The pillar detector with a 12 mum height achieved a thermal neutron detection efficiency of 7.3% at 2 V.


IEEE Transactions on Nuclear Science | 2013

Fabrication Methodology of Enhanced Stability Room Temperature TlBr Gamma Detectors

Adam M. Conway; Lars F. Voss; A. J. Nelson; Patrick R. Beck; Ted A. Laurence; Robert T. Graff; Rebecca J. Nikolic; Stephen A. Payne; Hadong Kim; Leonard J. Cirignano; Kanai S. Shah

Thallium bromide (TlBr) is a material of interest for use in room temperature gamma ray detector applications due to is wide bandgap 2.7 eV and high average atomic number (Tl 81, Br 35). Researchers have achieved energy resolutions of 1.3% at 662 keV, demonstrating the potential of this material system. However, these detectors are known to polarize using conventional configurations, limiting their use. While high quality material is a critical starting point for excellent detector performance, we show that the room temperature stability of planar TlBr gamma spectrometers can be significantly enhanced by treatment with both hydrofluoric and hydrochloric acid. By incorporating F or Cl into the surface of TlBr, current instabilities are eliminated and the longer term current of the detectors remains unchanged. In addition the choice of electrode metal is shown to have a dramatic effect on the long term stability of TlBr detector performance 241Am spectra are also shown to be more stable for extended periods; detectors have been held at 4000 V/cm for 50 days with less than 10% degradation in peak centroid position.


Proceedings of SPIE | 2011

Long-term room temperature stability of TlBr gamma detectors

Adam M. Conway; Lars F. Voss; A. J. Nelson; Patrick R. Beck; Robert T. Graff; Rebecca J. Nikolic; S.A. Payne; Hadong Kim; Leonard J. Cirignano; Kanai S. Shah

TlBr is a material of interest for use in room temperature gamma ray detector applications due to is wide bandgap 2.7 eV and high average atomic number (Tl 81, Br 35). Researchers have achieved energy resolutions of 1.3 % at 662 keV, demonstrating the potential of this material system. However, these detectors are known to polarize using conventional configurations, limiting their use. Continued improvement of room temperature, high-resolution gamma ray detectors based on TlBr requires further understanding of the degradation mechanisms. While high quality material is a critical starting point for excellent detector performance, we show that the room temperature stability of planar TlBr gamma spectrometers can be significantly enhanced by treatment with both hydrofluoric and hydrochloric acid. By incorporating F or Cl into the surface of TlBr, current instabilities are eliminated and the longer term current of the detectors remains unchanged. 241Am spectra are also shown to be more stable for extended periods; detectors have been held at 2000 V/cm for 52 days with less than 10% degradation in peak centroid position. In addition, evidence for the long term degradation mechanism being related to the contact metal is presented.


nuclear science symposium and medical imaging conference | 2010

Surface processing of TlBr for improved gamma spectroscopy

Lars F. Voss; Adam M. Conway; Robert T. Graff; Patrick R. Beck; Rebecca J. Nikolic; A. J. Nelson; Stephen A. Payne; Hadong Kim; Len J. Cirignano; Kanai S. Shah

Planar detectors have been fabricated on 0.5 mm thick TlBr crystals grown by Radiation Monitoring Devices (RMD). The crystals have been characterized by microhardness measurements. A surface damage layer resulting from mechanical polishing has been measured to be approximately 3.7 μm thick. We have removed this layer with H2O2 chemical etching and compared device performance with and without the presence of the surface damage layer and found significant differences in the initial and long term current-voltage behavior and radiation response. Detectors treated with H2O2 to remove this layer have been shown to display superior performance as compared to unetched detectors followed a period of “field annealing”.


Symposium on Micromachining and Microfabrication | 1999

Novel thin film solid-oxide fuel cell for microscale energy conversion

Jeffrey D. Morse; Alan F. Jankowski; Jeffrey P. Hayes; Robert T. Graff

A novel approach for the fabrication and assembly of a solid oxide fuel cell system is described which enables effective scaling of the fuel delivery, manifold, and fuel cell stack components for applications in miniature and microscale energy conversion. Scaling towards miniaturization is accomplished by utilizing thin film deposition combined with novel micromachining approaches which allow manifold channels and fuel delivery system to be formed within the substrate which the thin film fuel cell stack is fabricated on, thereby circumventing the need for bulky manifold components which are not directly scalable. Results demonstrating the generation of electrical current in the temperature range of 200 - 400 degrees Celsius for a thin film solid oxide fuel cell stack fabricated on a silicon wafer will be presented.


Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena | 2010

Planarization of high aspect ratio p-i-n diode pillar arrays for blanket electrical contacts

Lars F. Voss; Q. Shao; C. E. Reinhardt; Robert T. Graff; Adam M. Conway; Rebecca J. Nikolic; Nirmalendu Deo; Chin Li Cheung

Two planarization techniques for high aspect ratio three dimensional pillar structured p-i-n diodes have been developed in order to enable a continuous coating of metal on the top of the structures. The first technique allows for coating of structures with topography through the use of a planarizing photoresist followed by reactive ion etch-back to expose the tops of the pillar structure. The second technique also utilizes photoresist but instead allows for planarization of a structure in which the pillars are filled and coated with a conformal coating by matching the etch rate of the photoresist to the underlying layers. These techniques enable deposition using either sputtering or electron beam evaporation of metal films to allow for electrical contact to the tops of the underlying pillar structure. These processes have potential applications for many devices comprised of three dimensional high aspect ratio structures.


MRS Proceedings | 1999

Porous thin-film anode materials for solid-oxide fuel cells

Jeffrey D. Morse; Robert T. Graff; Jeffrey P. Hayes; Alan F. Jankowski

Thin film, solid-oxide fuel cells (TFSOFCs) synthesized from an electrolyte and conductive material are developed using photolithographic patterning and physical vapor deposition. The anode layer must enable combination of the reactive gases, be conductive to pass the electric current, and provide mechanical support to the electrolyte and cathode layers. The microstructure and morphology desired for the anode layer should facilitate generation of maximum current density from the fuel cell. For these purposes, the parameters of the deposition process and post-deposition patterning are developed to optimize a continuous porosity across the anode layer. The anode microstructure is characterized using scanning electron microscopy and the power output generated through current-voltage measurement.


Journal of Vacuum Science & Technology B | 2013

Analysis of strain in dielectric coated three dimensional Si micropillar arrays

Lars F. Voss; C. E. Reinhardt; Robert T. Graff; Adam M. Conway; Qinghui Shao; Rebecca J. Nikolic; Mushtaq A. Dar; C. L. Cheung

Stress induced in [100] oriented Si circular micropillars by coatings of low pressure chemical vapor deposited 10B, SiyNx, and plasma enhanced chemical vapor deposited SiO2 were measured using micro-Raman spectroscopy. Both tensile and compressive strains in the Si micropillars were observed. Exceptionally large stresses were found to exist in some of the measured Si micropillars. The cross-sectional shapes of these structures were shown to be an important factor in correlating their strain concentrations which could fracture the micropillar.

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Adam M. Conway

Lawrence Livermore National Laboratory

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Rebecca J. Nikolic

Lawrence Livermore National Laboratory

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Lars F. Voss

Lawrence Livermore National Laboratory

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A. J. Nelson

Lawrence Livermore National Laboratory

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C. E. Reinhardt

Lawrence Livermore National Laboratory

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Patrick R. Beck

Lawrence Livermore National Laboratory

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Hadong Kim

Lawrence Livermore National Laboratory

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S.A. Payne

Lawrence Livermore National Laboratory

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Jeffrey D. Morse

Lawrence Livermore National Laboratory

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