Roberto Fallica

Dynamic absorption coefficients of chemically amplified resists and nonchemically amplified resists at extreme ultraviolet

Abstract. The dynamic absorption coefficients of several chemically amplified resists (CAR) and non-CAR extreme ultraviolet (EUV) photoresists are measured experimentally using a specifically developed setup in transmission mode at the x-ray interference lithography beamline of the Swiss Light Source. The absorption coefficient α and the Dill parameters ABC were measured with unprecedented accuracy. In general, the α of resists match very closely with the theoretical value calculated from elemental densities and absorption coefficients, whereas exceptions are observed. In addition, through the direct measurements of the absorption coefficients and dose-to-clear values, we introduce a new figure of merit called chemical sensitivity to account for all the postabsorption chemical reaction ongoing in the resist, which also predicts a quantitative clearing volume and clearing radius, due to the photon absorption in the resist. These parameters may help provide deeper insight into the underlying mechanisms of the EUV concepts of clearing volume and clearing radius, which are then defined and quantitatively calculated.

Organometallic carboxylate resists for extreme ultraviolet with high sensitivity

Abstract. We have developed organometallic carboxylate compounds [RnM(O2CR′)2] capable of acting as negative-tone extreme ultraviolet (EUV) resists. The most sensitive of these resists contain antimony, three R-groups and two carboxylate groups, and carboxylate groups with polymerizable olefins (e.g., acrylate, methacrylate, or styrenecarboxylate). Evidence suggests that high sensitivity is achieved through the polymerization of olefins in the exposed region. We have performed a systematic sensitivity study of the molecules of the type RnM(O2CR′)2 where we have studied seven R groups, four main group metals (M), and three polymerizable carboxylate groups (O2CR′). The sensitivity of these resists was evaluated using Emax or dose to maximum resist thickness after exposure and development. We found that the greatest predictor of sensitivity of the RnSb(O2CR′)2 resists is their level of polymerizable olefins. We mathematically define the polymerizable olefin loading (POL) as the ratio of the number of olefins versus the number of nonhydrogen atoms. Linear and log plots of Emax versus POL for a variety of molecules of the type R3Sb(O2CR′)2 lend insight into the behavior of these resists.

Toward 10 nm half-pitch in extreme ultraviolet lithography: results on resist screening and pattern collapse mitigation techniques

Abstract. Extreme ultraviolet (EUV) lithography is considered to be the most promising option to continue with the downscaling of integrated circuits in high-volume manufacturing. One of the main challenges, however, is the development of EUV resists that fulfill the strict sensitivity, resolution, and line-edge roughness specifications of future nodes. Here, we present our EUV resist screening results of a wide range of EUV resists in their developmental phase from our collaborators from around the world. Furthermore, we have carried out extensive experiments to improve the processing parameters of the resists as well as to identify the optimal wafer pretreatment methods in order to optimize the adhesion of the resist to the substrate. We show that even though significant improvements in performance of chemically amplified resists have been achieved, pattern collapse is still the major process-limiting factor as the resolution decreases below 14 nm half-pitch.

Dynamic absorption coefficients of CAR and non-CAR resists at EUV

The dynamic absorption coefficients of several CAR and non-CAR EUV photoresists are measured experimentally using a specifically developed setup in transmission mode at the XIL beamline of the Swiss Light Source. The absorption coefficient α and the Dill parameters ABC were measured with unprecedented accuracy. In general the α of resists match very closely with the theoretical value calculated from elemental densities and absorption coefficients, whereas exceptions are observed. In addition, through the direct measurements of the absorption coefficients and dose-to-clear values, we introduce a new figure of merit called Chemical Sensitivity to account for all the post-absorption chemical reaction ongoing in the resist, which is also predicts a quantitative clearing volume, and respectively clearing radius, due to the photon absorption in the resist. These parameters may help in deeper insight into the underlying mechanisms of EUV concept of clearing volume and clearing radius are then defined and quantitatively calculated.

Toward 10nm half-pitch in EUV lithography: results on resist screening and pattern collapse mitigation techniques

Extreme ultraviolet lithography (EUVL) is considered to be the most promising option to continue with the aggressive scaling required in high-volume manufacturing (HVM) of integrated circuits. One of the main challenges, however, is the development of EUV resists that fulfill the strict sensitivity, resolution, and line-edge roughness specifications of future nodes. Here, we present our EUV resist screening results of a wide range of EUV resists in their developmental phase from our collaborators from around the world. Furthermore, we have carried out extensive experiments to improve the processing parameters of the resists as well as to identify the optimal wafer pre-treatment methods in order to optimize the adhesion of the resist to the substrate. We show that even though significant improvements in performance of chemically amplified resists have been achieved, pattern collapse is still the major process-limiting factor as the resolution decreases below 14 nm half-pitch (HP).

Absorption coefficient and exposure kinetics of photoresists at EUV

The experimental measurement of the time-dependent absorption of photoresists at extreme ultraviolet wavelength is of great interest for the modeling of the lithographic process. So far, several technical challenges have made the accurate determination of the linear absorption coefficient and the Dill parameters nontrivial. In this work, we use a dedicated equipment and synchrotron light source to experimentally measure the transmittance of thin layers of photoresists on transparent silicon nitride membranes, and their thickness was measured with the spectroscopic ellipsometry. The absorption of negative tone photo-condensed metal oxide photoresists based on Sn cage structures, and of Zr and Hf oxoclusters was measured and compared to the estimated values. It was found that tin based materials absorb considerably more light than conventional chemically amplified resists based on organic polymer. Hafnium-based materials have about twice absorption, while zirconium based are basically comparable to organic resists. Furthermore, the exposure kinetics of several chemically amplified resists with varying photo-acid concentration and backbone polymer was studied. The rate of bleaching, described by the Dill parameter C, was measured and conclusions are drawn based on the specific resist formulation.

State-of-the-art EUV materials and processes for the 7nm node and beyond

Extreme ultraviolet lithography (EUVL, λ = 13.5 nm) being the most likely candidate to manufacture electronic devices for future technology nodes is to be introduced in high volume manufacturing (HVM) at the 7 nm logic node, at least at critical lithography levels. With this impending introduction, it is clear that excellent resist performance at ultra-high printing resolutions (below 20 nm line/space L/S) is ever more pressing. Nonetheless, EUVL has faced many technical challenges towards this paradigm shift to a new lithography wavelength platform. Since the inception of chemically amplified resists (CARs) they have been the base upon which state-of-the art photoresist technology has been developed from. Resist performance as measured in terms of printing resolution (R), line edge roughness (LER), sensitivity (D or exposure dose) and exposure latitude (EL) needs to be improved but there are well known trade-off relationships (LRS trade-off) among these parameters for CARs that hamper their simultaneous enhancement. Here, we present some of the most promising EUVL materials tested by EUV interference lithography (EUV-IL) with the aim of resolving features down to 11 nm half-pitch (HP), while focusing on resist performance at 16 and 13 nm HP as needed for the 7 and 5 nm node, respectively. EUV-IL has enabled the characterization and development of new resist materials before commercial EUV exposure tools become available and is therefore a powerful research and development tool. With EUV-IL, highresolution periodic images can be printed by the interference of two or more spatially coherent beams through a transmission-diffraction grating mask. For this reason, our experiments have been performed by EUV-IL at Swiss Light Source (SLS) synchrotron facility located at the Paul Scherrer Institute (PSI). Having the opportunity to test hundreds of EUVL materials from vendors and research partners from all over the world, PSI is able to give a global update on some of the most promising materials tested.

Optimization and sensitivity enhancement of high-resolution molecular resist for EUV lithography

We have recently introduced a new molecular resist system that demonstrates high-resolution capability. A series of studies such as quencher choice and loading was conducted in order to optimize the performance of this material. The optimized conditions allowed patterning 14 nm half-pitch (hp) lines with a line width roughness (LWR) of 3.56 nm at the XIL beamline of the Swiss Light source. Furthermore it was possible to resolve 11 nm hp features with 5.9 nm LWR. First exposure results on an NXE3300 are also presented. We have also begun to investigate the addition of metals to EUV photoresist as a means to increase sensitivity and modify secondary electron blur. Initial results for one of the metal additives show that the sensitivity could be enhanced by up to 60 percent.

Comparative study of line roughness metrics of chemically amplified and inorganic resists for extreme ultraviolet

Abstract. We present a comprehensive comparative study of the roughness metrics of different resists. Dense line/space of polymethyl methacrylate, hydrogen silsesquioxane, a metal oxide-based resist, and different chemically amplified resists (CARs) have been patterned by extreme ultraviolet interference lithography. All three line width roughness (LWR) metrics: the root-mean-square (r.m.s.) roughness value σLWR, the correlation length ξ, and the roughness exponent α, were extracted by metrological analysis of top-down SEM images. We found that all metrics are required to fully describe the overall roughness of each resist. Our measurements indicate that in fact, a few of the state-of-the-art resists tested here can meet the International Technology Roadmap for Semiconductors requirements for σLWR. The correlation length ξ was also found to be considerably higher in polymer-based materials in comparison to nonpolymers. Finally, the roughness exponent α, interpreted using the concept of fractal geometry, was found to be mainly affected by acid diffusion in CARs, where it produces line edges with a higher complexity than in non-CAR resists. These results indicate that the different resists platforms show very different LWR metrics and roughness is not manifested only in the σLWR but in all parameters. Therefore, all roughness metrics should be taken into account when comparing the performance among different resists since they ultimately have a substantial impact on device performance.

Comparative study of line roughness metrics of chemically amplified and inorganic resists for EUV

We present a comprehensive study of the roughness metrics of different resists. Dense line/space (L/S) images of polymethyl methacrylate (PMMA), hydrogen silsesquioxane (HSQ), different chemically amplified resists (CARs), and metal oxide based resists have been patterned by extreme ultraviolet interference lithography (EUV-IL). The three line width roughness metrics: r.m.s. value σLWR, correlation length ξ and roughness exponent α, were measured by metrological analysis of top down SEM images and compared for the different resists imaged here. It was found, that all metrics are required to fully describe the roughness of each resist. Our measurements indicate that few of the state-of-the- art resists tested here can meet the International Technology Roadmap for Semiconductors (ITRS) requirements for σLWR. The correlation length ξ has been found to be considerably higher in polymer-based materials in comparison to non-polymers. The roughness exponent α, interpreted using the concept of fractal geometry, is mainly affected by acid diffusion in CARs where it produces line edges with a higher complexity than in non-CAR resists. These results indicate that different resists platforms show very different LWR resist metrics and roughness is not only manifested in the σLWR but in all parameters. Therefore, all roughness metrics should be taken into account in the performance comparison of the resist, since they can have a substantial impact on the device performance.