Robin Vismara

Advanced light management based on periodic textures for Cu(In,Ga)Se 2 thin-film solar cells

We have used 3-D optical modelling to investigate light management concepts based on periodic textures and material optimization for photovoltaic devices based on Cu(In,Ga)Se2 (CIGS) absorber material. At first, calibration of the software based on the characterization of a reference (1500-nm thick) CIGS device was carried out. The effects of 1-D and 2-D symmetric gratings on the cell were then investigated, showing significant improvement in anti-reflection effect and in absorptance in the active layer, achieved by excitation of guided modes in the absorber. In addition, device configurations endowed with alternative back reflector and front transparent conductive oxide (TCO) were tested with the goal to quench parasitic absorption losses at front and back side. The use of In2O3:H (IOH) as front and back TCO, combined with an optimized 2-D grating structure, led to a 25% increase of the optical performance with respect to an equally-thick flat device. Most of the performance increase was kept when the absorber thickness was reduced from 1500 nm to 600 nm.

Organometallic halide perovskite/barium di-silicide thin-film double-junction solar cells

Barium di-silicide (BaSi2) is an abundant and inexpensive semiconductor with appealing opto-electrical properties. In this work we show that a 2-μm thick BaSi2-based thin-film solar cell can exhibit an implied photo-current density equal to 41.1 mA/cm2, which is higher than that of a state-of-the-art wafer-based c-Si hetero-junction solar cell. This performance makes BaSi2 an attractive absorber for high-performing thin-film and multi-junction solar cells. In particular, to assess the potential of barium di-silicide, we propose a thin-film double-junction solar cell based on organometallic halide perovskite (CH3NH3PbI3) as top absorber and BaSi2 as bottom absorber. The resulting modelled ultra-thin double-junction CH3NH3PbI3 / BaSi2 (< 2 μm) exhibits an implied total photo-current density equal to 38.65 mA/cm2 (19.84 mA/cm2 top cell, 18.81 mA/cm2 bottom cell) and conversion efficiencies up to 28%.

Back-contacted BaSi 2 solar cells : An optical study

We present the optical investigation of a novel back-contacted architecture for solar cells based on a thin barium (di)silicide (BaSi2) absorber. First, through the analysis of absorption limits of different semiconducting materials, we show the potential of BaSi2 for photovoltaic applications. Then, the proposed back contacted BaSi2 solar cell design is investigated and optimized. An implied photocurrent density of 40.3 mA/cm2 in a 1-μm thick absorber was achieved, paving the way for novel BaSi2-based thin-film solar cells.

Oxidation-Induced Structure Transformation: Thin-Film Synthesis and Interface Investigations of Barium Disilicide toward Potential Photovoltaic Applications

Barium disilicide (BaSi2) has been regarded as a promising absorber material for high-efficiency thin-film solar cells. However, it has confronted issues related to material synthesis and quality control. Here, we fabricate BaSi2 thin films via an industrially applicable sputtering process and uncovered the mechanism of structure transformation. Polycrystalline BaSi2 thin films are obtained through the sputtering process followed by a postannealing treatment. The crystalline quality and phase composition of sputtered BaSi2 are characterized by Raman spectroscopy and X-ray diffraction (XRD). A higher annealing temperature can promote crystallization of BaSi2, but also causes an intensive surface oxidation and BaSi2/SiO2 interfacial diffusion. As a consequence, an inhomogeneous and layered structure of BaSi2 is revealed by Auger electron spectroscopy (AES) and transmission electron microscopy (TEM). The thick oxide layer in such an inhomogeneous structure hinders further both optical and electrical characterizations of sputtered BaSi2. The structural transformation process of sputtered BaSi2 films then is studied by the Raman depth-profiling method, and all of the above observations come to an oxidation-induced structure transformation mechanism. It interprets interfacial phenomena including surface oxidation and BaSi2/SiO2 interdiffusion, which lead to the inhomogeneous and layered structure of sputtered BaSi2. The mechanism can also be extended to epitaxial and evaporated BaSi2 films. In addition, a glimpse toward future developments in both material and device levels is presented. Such fundamental knowledge on structural transformations and complex interfacial activities is significant for further quality control and interface engineering on BaSi2 films toward high-efficiency solar cells.

Thin-film amorphous silicon nanopillar solar cells: An investigation of the optical potential

We present an optical investigation of nanopillar thin-film solar cells based on amorphous silicon, showing implied photocurrent density values > 14 mA/cm2 for a volumetric equivalent thicknesses of 85 nm.

Back Contacted BaSi 2 Thin-Film Solar Cells: An Optical Analysis

We present an investigation of the optical performance of back contacted BaSi2 solar cells. We determine the optimal geometrical configuration and analyze benefits and drawback of such architectures.

Radial heterojunction c-Si nanowire solar cells with 11.8% conversion efficiency

Optical modelling and fabrication of hetero-junction c-Si nanowire solar cells is presented, including light propagation analysis and geometrical optimization. Performance of the fabricated device shows an unprecedented 11.8% conversion efficiency.