Roelof Herman Willem Salters

Punch-through currents in P+NP+ and N+PN+ sandwich structures—I: Introduction and basic calculations

Abstract A qualitative description and a quantitative approximation of the current/voltage characteristic of the punch-through effect, based on drift- and diffusion-theory, is presented. An exact definition of the punch-through voltage is given. For small currents the current/voltage characteristic of the punch-through effect is an exponential curve i = I 0 exp [ q ( V − V PT )/ m ( i ) kT ] where m ( i ) is a non-ideality factor which is equal or larger than 2 and which increases with increasing current. At larger currents a deviation of the exponential curve is found due to space-charge limiting effects. A more general theory for small currents and some experimental verifications are described in Part II[48].

ICs going on a 3-V diet

The factors motivating the transition, presently underway, from 5-V to 3-V power supplies for integrated circuits are examined. Such a change would favorably impact the size, weight, and battery life of battery-operated equipment, as well as reduce power consumption and alleviate heat problems in workstations and computers. Standardization issues are considered, and the timing of the transition and the problems that will be encountered are discussed.<<ETX>>

Punch-through currents in P+NP+ and N+PN+ sandwich structures—II: General low-injection theory and measurements

Abstract Analytical one-dimensional exponential expressions are derived for the current/voltage characteristics of the punch-through effect in devices where a certain bias voltage is needed to bring the device into punch-through ( V PT > 0) and where punch-through is already present in the non-biased condition ( V PT = 0). Measurements show that the theory can describe the current/voltage relations adequately at low current levels.

Memory-fast DRAMs for sharper TV

It is argued that HDTV will require even greater memory throughput than computers do, for future television features such as high-definition display and picture enhancement. Current TV memories are described, and the features of HDTV that require faster memories are examined. The constraints composed by DRAM characteristics on TV designers are considered.<<ETX>>