Ryota Takenaka

Development and performance of Kyoto's x-ray astronomical SOI pixel (SOIPIX) sensor

We have been developing monolithic active pixel sensors, known as Kyoto’s X-ray SOIPIXs, based on the CMOS SOI (silicon-on-insulator) technology for next-generation X-ray astronomy satellites. The event trigger output function implemented in each pixel offers microsecond time resolution and enables reduction of the non-X-ray background that dominates the high X-ray energy band above 5–10 keV. A fully depleted SOI with a thick depletion layer and back illumination offers wide band coverage of 0.3–40 keV. Here, we report recent progress in the X-ray SOIPIX development. In this study, we achieved an energy resolution of 300 eV (FWHM) at 6 keV and a read-out noise of 33 e- (rms) in the frame readout mode, which allows us to clearly resolve Mn-Kα and Kβ. Moreover, we produced a fully depleted layer with a thickness of 500 μm. The event-driven readout mode has already been successfully demonstrated.

Development and Evaluation of Event-Driven SOI Pixel Detector for X-ray Astronomy

Ayaki Takeda∗a, Takeshi Go Tsurua, Takaaki Tanakaa, Hideaki Matsumuraa, Yasuo Araib, Koji Moric, Yusuke Nishiokac, Ryota Takenakac, Takayoshi Kohmurad , Shinya Nakashimae, Shoji Kawahito f , Keiichiro Kagawa f , Keita Yasutomi f , Hiroki Kamehama f and Sumeet Shrestha f aDepartment of Physics, Faculty of Science, Kyoto University bInstitute of Particle and Nuclear Studies (IPNS), High Energy Accelerator Research Organization (KEK) cDepartment of Applied Physics, Faculty of Engineering, University of Miyazaki dDepartment of Physics, School of Science and Technology, Tokyo University of Science eJapan Aerospace Exploration Agency (JAXA) fResearch Institute of Electronics, Shizuoka University