S. Aravazhi
MESA+ Institute for Nanotechnology
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Publication
Featured researches published by S. Aravazhi.
Advanced Materials | 2012
Dimitri Geskus; S. Aravazhi; Sonia M. García-Blanco; Markus Pollnau
Modal gain per unit length versus launched pump power is predicted and measured in a 47.5 at.% Yb(3+) -doped potassium double tungstate channel waveguide. The highest measured gain exceeds values previously reported for rare-earth-ion-doped materials by two orders of magnitude.
Optics Express | 2010
Dimitri Geskus; S. Aravazhi; Kerstin Worhoff; Markus Pollnau
In KGd(1-x)Lu(x)(WO(4))(2):Yb(3+) channel waveguides grown onto KY(WO(4))(2) substrates by liquid phase epitaxy and microstructured by Ar+ beam etching, we produced 418 mW of continuous-wave output power at 1023 nm with a slope efficiency of 71% and a threshold of 40 mW of launched pump power at 981 nm. The degree of output coupling was 70%. By grating tuning in an extended cavity and pumping at 930 nm, we demonstrated laser operation from 980 nm to 1045 nm. When pumping at 973 nm, lasing at 980 nm with a record-low quantum defect of 0.7% was achieved.
Optics Express | 2010
Dimitri Geskus; S. Aravazhi; C. Grivas; Kerstin Worhoff; Markus Pollnau
Epitaxially grown, 2.4-microm-thin layers of KY(WO(4))(2):Gd(3+), Lu(3+), Yb(3+), which exhibit a high refractive index contrast with respect to the undoped KY(WO(4))(2) substrate, have been microstructured by Ar beam milling, providing 1.4-microm-deep ridge channel waveguides of 2 to 7 microm width, and overgrown by an undoped KY(WO(4))(2) layer. Channel waveguide laser operation was achieved with a launched pump power threshold of only 5 mW, a slope efficiency of 62% versus launched pump power, and 76 mW output power.
Optics Letters | 2012
K. van Dalfsen; S. Aravazhi; C. Grivas; Sonia M. García-Blanco; Markus Pollnau
Laser experiments were performed on buried, ridge-type channel waveguides in an 8 at. % thulium-doped, yttrium-gadolinium-lutetium codoped monoclinic double tungstate. A maximum slope efficiency of 70% and output powers up to 300 mW about 2.0 μm were obtained in a mirrorless laser resonator, by pumping with a Ti:sapphire laser near 800 nm. To the best of our knowledge, this result represents the most efficient 2 μm channel waveguide laser to date. Lasing is obtained at various wavelengths between 1810 nm and 2037 nm.
Optics Letters | 2013
Jun Wan Kim; Sun Young Choi; Dong-Il Yeom; S. Aravazhi; Markus Pollnau; Uwe Griebner; Valentin Petrov; Fabian Rotermund
We report Q-switched operation of a planar waveguide laser by evanescent-field interaction with single-walled carbon nanotubes deposited on top of the waveguide. The saturable-absorber-integrated gain medium, which operates based on evanescent-field interaction, enables the realization of a diode-pumped 2.5-cm-long Q-switched Yb:KYW waveguide laser emitting at 1030 nm. With such a compact cavity design, we achieve maximum output powers of up to 30 mW, corresponding to a single-pulse energy of 124 nJ, at 241 kHz repetition rate. The shortest pulse duration of 433 ns is generated at a repetition rate of 231 kHz.
Optics Express | 2013
Dimitri Geskus; E. H. Bernhardi; K. van Dalfsen; S. Aravazhi; Markus Pollnau
Channel waveguide lasers operating at 981 nm are demonstrated in KY(1-x-y)Gd(x)Lu(y)(WO4)2:Yb3+ waveguides grown by liquid phase epitaxy onto undoped KY(WO4)2 substrates and microstructured by Ar+ beam etching. Under pumping at 934 nm of samples with different waveguide geometry and outcoupling degree, a record-high slope efficiency of 76% versus absorbed pump power and a record-high output power of 650 mW for rare-earth-ion-doped microstructured channel waveguide lasers is achieved. The laser performance is compared to that of the same devices when pumping at 981 nm and lasing near 1025 nm.
Optics Express | 2011
K. van Dalfsen; S. Aravazhi; Dimitri Geskus; Kerstin Worhoff; Markus Pollnau
Laser experiments on 1.5at.%, 5at.%, and 8at.% thulium-gadolinium-lutetium-yttrium co-doped, buried, ridge-type channel waveguides in a monoclinic potassium double tungstate demonstrate a maximum slope efficiency of 70% and output powers of 300 mW at ~1.9 μm.
AIP Advances | 2015
Jun Wan Kim; Sun Young Choi; S. Aravazhi; Markus Pollnau; Uwe Griebner; Valentin Petrov; Sukang Bae; Kwang Jun Ahn; Dong-Il Yeom; Fabian Rotermund
A diode-pumped Yb:KYW planar waveguide laser, single-mode Q-switched by evanescent-field interaction with graphene, is demonstrated for the first time. Few-layer graphene grown by chemical vapor deposition is transferred onto the top of a guiding layer, which initiates stable Q-switched operation in a 2.4-cm-long waveguide laser operating near 1027 nm. Average output powers up to 34 mW and pulse durations as short as 349 ns are achieved. The measured output beam profile, clearly exhibiting a single mode, agrees well with the theoretically calculated mode intensity distribution inside the waveguide. As the pump power is increased, the repetition rate and pulse energy increase from 191 to 607 kHz and from 7.4 to 58.6 nJ, respectively, whereas the pulse duration decreases from 2.09 μs to 349 ns.
Journal of The Optical Society of America B-optical Physics | 2007
Christian Herzog; S. Aravazhi; Andrea Guarino; Arno Schneider; Gorazd Poberaj; Peter Günter
Monomodal slab waveguides in lattice-matched epitaxial thin films of paraelectric potassium sodium tantalate niobate (x≈0.02) on paraelectric potassium tantalate substrates without surface polishing have been fabricated for the first time, to the best of our knowledge. A surface roughness of 21 nm (rms) has been measured by atomic force microscopy. The film thickness, d=1.4 μm, and refractive index contrast, Δn=8×10−3, have been deduced from the intensity profile of the guided mode at λ=633 nm.
Optics Express | 2011
Koop van Dalfsen; S. Aravazhi; Dimitri Geskus; Kerstin Worhoff; Markus Pollnau
Laser experiments on 1.5at.%, 5at.%, and 8at.% thulium-gadolinium-lutetium-yttrium co-doped, buried, ridge-type channel waveguides in a monoclinic potassium double tungstate demonstrate a maximum slope efficiency of 70% and output powers of 300 mW at ~1.9 μm.