S. Avrillon

Fabrication of a double-sided silicon microstrip detector with an ONO capacitor dielectric film

Double-sided silicon microstrip detectors (DSSDs) with integrated coupling capacitors formed by an oxide-nitride-oxide (ONO) dielectric film were fabricated using newly developed processing techniques. We report on the processing techniques and some characteristics of the detectors fabricated in the above process.

Vertex detector for the KEK B-factory

Abstract We are designing a silicon vertex detector to be installed in a detector for the KEK Asymmetric B-factory project. In order to fulfill the accuracy required for the vertex resolution from the physics motivation we made several studies about the various aspects of the construction technology as well as the studies, is presented. The validity and performance of the design are also discussed through which was derived from the above studies, is presented. The validity and performance of the design are also discussed through results of a study of the detector simulation which incorporated a capacitive network model for the distribution of collected charge.

LSI design and data-acquisition architecture for a silicon micro-vertex detector at the KEK B-factory

Abstract We are developing the data-acquisition system of a silicon micro-vertex detector (SMVD) for the KEK B-factory. This data-acquisition system for the SMVD comprises detector modules, data scanners, and an event builder. We have developed several specially designed analog and digital VLSIs for the SMVD data-acquisition system. In this paper, we describe the system configuration together with the functions of the VLSIs.

Development of novel fabrication techniques for a silicon micro-vertex detector unit using the Flip-Chip bonding method

Full-size models of a detector unit for a silicon micro-vertex detector were built for the KEK B factory. The Flip-Chip Bonding (FCB) method using a new type anisotropic conductive film (ACF) was examined. The structure using the new type ACF and improved fabrication process provide a sufficient electrical connection and good reliability for the detector unit. >

Development of new assembly techniques for a silicon micro-vertex detector unit using the flip-chip bonding method

Abstract Full-size models of a detector unit for a silicon micro-vertex detector were built for the KEK B factory. The Flip-Chip Bonding (FCB) method using a new type anisotropic conductive film was examined. The structure using the FCB method successfully provides a new architecture for the silicon micro-vertex detector unit.

New Insulator Film Of Integrated Capacitor For Silicon Strip Detector

A new stacked thick three layers ONO (silicon diOxide silicon Nitride silicon dioxide) insulator film was developed to be applied for a silicon strip detector. We expected that the ONO film had a superior integrated capacitor in terms of a high electrical breakdown voltage, long term reliability and large unit capacitance. We measured electrical behaviors of test capacitors with single layer silicon dioxide (SiOz), single layer silicon nitride (SisNd), NO (silicon Nitride silicon dioxide), ON (silicon dioxide silicon Nitride) and ONO capacitors.

Load capacitance of single-sided silicon strip detectors with double-metal layers

Abstract The load capacitance of the single-sided silicon microstrip detector with double-metal layers was studied. In order to understand the capacitance due to the double-metal structure, we have fabricated single-sided microstrip detectors with different double-metal structure on the junction (p) side or the ohmic (n) side. The measured capacitance was compared with the prediction of LEPSI-CRN model.

Preliminary test results from a single-sided two-dimensional detector using pMOS pixels

Abstract As a part of the R&D for the BELLE experiment at the KEK-B-factory a strip-like two-dimensional readout single-sided detector using pMOS pixels has been developed and tested. It may be used in upgrades of the vertex detector. A double drain pMOS transistor, implanted in the 100 × 100 μ m 2 n-well collecting electrode, amplifies the signal, while the low detector capacitance lowers the noise. A high signal-to-noise ratio is expected. Ganging the pixels at the drain nodes in a strip-like configuration provides a two-dimensional readout. The superior characteristics of the proposed device are attractive for charged particle detection as well as X- and γ-rays. We present here results from electrical and IR light tests of prototypes of the pMOS pixel.

Development of novel architecture and assembly techniques for a detector unit for a silicon micro-vertex detector using the flip-chip bonding method

Full-size models of a detector unit for a silicon microvertex detector for the KEK B factory have been built. The model consists of four dummy double-sided, double-metal silicon microstrip detectors and two silicon end-boards mounted with dummy readout VLSIs on both sides. In this trial the flip-chip bonding method, using an anisotropic conductive film, is applied to both sides of the detector unit to bond 640 strips at a pitch of 50 mu m.<<ETX>>

Evaluation of silicon micro strip detectors with large read-out pitch

For the development of the silicon micro strip detector with the pitch of the readout strips as large as 250 /spl mu/m on ohmic side, we made samples with different structures. Charge collection was evaluated to optimize the width of implant strips, aluminum read-out strips, and/or the read-out scheme among strips.