S. Birindelli

Waveguide-coupled nanopillar metal-cavity light-emitting diodes on silicon

Nanoscale light sources using metal cavities have been proposed to enable high integration density, efficient operation at low energy per bit and ultra-fast modulation, which would make them attractive for future low-power optical interconnects. For this application, such devices are required to be efficient, waveguide-coupled and integrated on a silicon substrate. We demonstrate a metal-cavity light-emitting diode coupled to a waveguide on silicon. The cavity consists of a metal-coated III–V semiconductor nanopillar which funnels a large fraction of spontaneous emission into the fundamental mode of an InP waveguide bonded to a silicon wafer showing full compatibility with membrane-on-Si photonic integration platforms. The device was characterized through a grating coupler and shows on-chip external quantum efficiency in the 10−4–10−2 range at tens of microamp current injection levels, which greatly exceeds the performance of any waveguide-coupled nanoscale light source integrated on silicon in this current range. Furthermore, direct modulation experiments reveal sub-nanosecond electro-optical response with the potential for multi gigabit per second modulation speeds.

Fully tuneable, Purcell-enhanced solid-state quantum emitters

We report the full energy control over a semiconductor cavity-emitter system, consisting of single Stark-tunable quantum dots embedded in mechanically reconfigurable photonic crystal membranes. A reversible wavelength tuning of the emitter over 7.5 nm as well as an 8.5 nm mode shift are realized on the same device. Harnessing these two electrical tuning mechanisms, a single exciton transition is brought on resonance with the cavity mode at several wavelengths, demonstrating a ten-fold enhancement of its spontaneous emission. These results open the way to bring several cavity-enhanced emitters mutually into resonance and therefore represent a key step towards scalable quantum photonic circuits featuring multiple sources of indistinguishable single photons.

Ultralow Surface Recombination Velocity in Passivated InGaAs/InP Nanopillars

The III–V semiconductor InGaAs is a key material for photonics because it provides optical emission and absorption in the 1.55 μm telecommunication wavelength window. However, InGaAs suffers from pronounced nonradiative effects associated with its surface states, which affect the performance of nanophotonic devices for optical interconnects, namely nanolasers and nanodetectors. This work reports the strong suppression of surface recombination of undoped InGaAs/InP nanostructured semiconductor pillars using a combination of ammonium sulfide, (NH4)2S, chemical treatment and silicon oxide, SiOx, coating. An 80-fold enhancement in the photoluminescence (PL) intensity of submicrometer pillars at a wavelength of 1550 nm is observed as compared with the unpassivated nanopillars. The PL decay time of ∼0.3 μm wide square nanopillars is dramatically increased from ∼100 ps to ∼25 ns after sulfur treatment and SiOx coating. The extremely long lifetimes reported here, to our knowledge the highest reported to date for undoped InGaAs nanostructures, are associated with a record-low surface recombination velocity of ∼260 cm/s. We also conclusively show that the SiOx capping layer plays an active role in the passivation. These results are crucial for the future development of high-performance nanoscale optoelectronic devices for applications in energy-efficient data optical links, single-photon sensing, and photovoltaics.

Electrically driven quantum light emission in electromechanically tuneable photonic crystal cavities

A single quantum dot deterministically coupled to a photonic crystal environment constitutes an indispensable elementary unit to both generate and manipulate single-photons in next-generation quantum photonic circuits. To date, the scaling of the number of these quantum nodes on a fully integrated chip has been prevented by the use of optical pumping strategies that require a bulky off-chip laser along with the lack of methods to control the energies of nano-cavities and emitters. Here, we concurrently overcome these limitations by demonstrating electrical injection of single excitonic lines within a nano-electro-mechanically tuneable photonic crystal cavity. When an electrically driven dot line is brought into resonance with a photonic crystal mode, its emission rate is enhanced. Anti-bunching experiments reveal the quantum nature of these on-demand sources emitting in the telecom range. These results represent an important step forward in the realization of integrated quantum optics experiments featurin...

Fully-tunable, purcell-enhanced on-chip quantum emitters

We report the all-electrical control over cavity-emitter systems, consisting in Stark-tunable quantum dots embedded in mechanically reconfigurable photonic crystal membranes. Purcell-effect from a single dot is demonstrated at distinct wavelengths.

Quantum photonic integrated circuits based on tunable dots and tunable cavities

Quantum photonic integrated circuits hold great potential as a novel class of semiconductor technologies that exploit the evolution of a quantum state of light to manipulate information. Quantum dots encapsulated in photonic crystal structures are promising single-photon sources that can be integrated within these circuits. However, the unavoidable energy mismatch between distant cavities and dots, along with the difficulties in coupling to a waveguide network, has hampered the implementation of circuits manipulating single photons simultaneously generated by remote sources. Here we present a waveguide architecture that combines electromechanical actuation and Stark-tuning to reconfigure the state of distinct cavity-emitter nodes on a chip. The Purcell-enhancement from an electrically controlled exciton coupled to a ridge waveguide is reported. Besides, using this platform, we implement an integrated Hanbury-Twiss and Brown experiment with a source and a splitter on the same chip. These results open new avenues to scale the number of indistinguishable single photons produced on-demand by distinct emitters.

Strong suppression of surface recombination in InGaAs nanopillars

Scaling down optoelectronic devices, namely nano-lasers and detectors, to deep sub-micrometer sizes, is crucial to achieve small footprint (<1 μm2), low energy consumption (<10 fJ/bit), and ultrafast speed required for the future optical interconnects [1]. Among the numerous challenges, non-radiative processes, specifically large surface recombination rates, have been shown to have a detrimental effect on the efficiency of nano-lasers and nano-LEDs [2, 3], as the surface-to-volume ratio of these nanoscale devices increases substantially. Although there has been intense research in core-shell semiconductor nanostructures [4], and surface passivation techniques [5], so far the achieved surface recombination rates are still too large to realize efficient nanoscale light sources at room-temperature (RT), particularly in the InGaAs material system crucial for optical communication applications.

Tuneable quantum light from a photonic crystal LED

Pure and deterministic single-photon sources, obtained by coupling a semiconductor quantum dot (QD) to a photonic crystal (PhC) cavity, constitute a key component for quantum photonic integrated circuits (QPICs) [1]. These sources are commonly excited by a laser pump, which involves some practical limitations in scaling the number of integrated cavity-emitter nodes and is hardly compatible with on-chip single-photon detectors. Here, we present the first demonstration of electrical injection of single dot lines coupled to photonic crystal modes. The latter can be electrically re-configured to bring multiple cavity-emitters into energy resonance.

Single photons from electrically driven reconfigurable photonic crystal cavities (Conference Presentation)

Due to their deterministic nature and efficiency, devices based on quantum dots (QD) are currently replacing traditional single-photon sources in the most complex quantum optics experiments, such as boson sampling protocols. Embedding these emitters into photonic crystal (PhCs) cavities enables the creation of an array of Purcell-enhanced single photons required to build quantum photonic integrated circuits. So far scaling of the number of these cavity-emitters nodes on a single chip has been hampered by practical problems such as the lack of post-fabrication methods to control their relative detuning and the complexity involved with their optical excitation. Here, we present a tuneable single-photon source combining electrical injection and nano-opto-electromechanical cavity tuning. The device consists of a double-membrane electromechanically tuneable PhC structure. A vertical p-i-n junction, hosted in the top membrane, is exploited to inject current in the QD layer and demonstrate a tunable nano LED whose cavity wavelength can be reversibly varied over 15 nanometers by electromechanically varying the distance between membranes. Besides, electroluminescence from single QD lines coupled to PhC cavities is reported for the first time. The measurement of the second-order autocorrelation function from a cavity-enhanced line proves the anti-bunched character of the emitted light. Since electrical injection does not produce stray pump photons, it makes the integration with superconducting single-photon detectors much more feasible. The large-scale integration of such tuneable single-photon sources, passive optics and waveguide detectors may enable the implementation of fully-integrated boson sampling circuits able to manipulate tens of photons.