S.C. Martin

2.5-THz GaAs monolithic membrane-diode mixer

A novel GaAs monolithic membrane-diode (MOMED) structure has been developed and implemented as a 2.5 THz Schottky diode mixer.

Submicron scaling of HBTs

The variation of heterojunction bipolar transistor (HBT) bandwidth with scaling is reviewed. High bandwidths are obtained by thinning the base and collector layers, increasing emitter current density, decreasing emitter contact resistivity, and reducing the emitter and collector junction widths. In mesa HBTs, minimum dimensions required for the base contact impose a minimum width for the collector junction, frustrating device scaling. Narrow collector junctions can be obtained by using substrate transfer or collector-undercut processes or, if contact resistivity is greatly reduced, by reducing the width of the base ohmic contacts in a mesa structure. HBTs with submicron collector junctions exhibit extremely high f/sub max/ and high gains in mm-wave ICs. Transferred-substrate HBTs have obtained 21 dB unilateral power gain at 100 GHz. If extrapolated at -20 dB/decade, the power gain cutoff frequency f/sub max/ is 1.1 THz. f/sub max/ will be less than 1 THz if unmodeled electron transport physics produce a >20 dB/decade variation in power gain at frequencies above 110 GHz. Transferred-substrate HBTs have obtained 295 GHz f/sub T/. The substrate transfer process provides microstrip interconnects on a low-/spl epsiv//sub r/ polymer dielectric with a electroplated gold ground plane. Important wiring parasitics, including wiring capacitance, and ground via inductance are substantially reduced. Demonstrated ICs include lumped and distributed amplifiers with bandwidths to 85 GHz and per-stage gain-bandwidth products over 400 GHz, and master-slave latches operating at 75 GHz.

Monolithic Schottky-collector resonant tunnel diode oscillator arrays to 650 GHz

We report monolithic array oscillators incorporating Schottky-collector resonant tunnel diodes (SRTDs). In the SRTD, a 0.1-/spl mu/m width Schottky collector contact provides a greatly reduced device series resistance, resulting in an estimated 2.2 THz maximum frequency of oscillation. A 64-element oscillator array oscillated at 650 GHz while a 16-element array produced 28 /spl mu/W at 290 GHz.

Submicron transferred-substrate heterojunction bipolar transistors

We report submicron transferred-substrate AlInAs/GaInAs heterojunction bipolar transistors (HBTs). Devices with 0.4-/spl mu/m emitter and 0.4-/spl mu/m collector widths have 17.5 dB unilateral gain at 110 GHz. Extrapolating at -20 dB/decade, the power gain cutoff frequency f/sub max/ is 820 GHz. The high f/sub max/, results from the scaling of HBTs junction widths, from elimination of collector series resistance through the use of a Schottky collector contact, and from partial screening of the collector-base capacitance by the collector space charge.

Fabrication of 200 to 2700 GHz multiplier devices using GaAs and metal membranes

Multiplier device fabrication techniques have been developed to enable robust implementation of monolithic circuits well into the THz frequency range. To minimize the dielectric loading of the waveguides, some circuits are realized entirely on a 3 /spl mu/m thick GaAs membrane with metal beamleads acting as RF probes and DC contact points. Other designs retain some thicker GaAs as a support and handling structure, allowing a membrane of bare metal or thin GaAs to be suspended across an input or output waveguide. Extensive use is made of selective etches, both reactive ion (RIE) and wet chemical, to maintain critical dimensions. Electron beam (e-beam) lithography provides the small contact areas required at the highest frequencies. Planar multiplier circuits for 200 GHz to 2700 GHz have been demonstrated using a variety of metal and GaAs membrane configurations made available by these fabrication techniques.

200, 400 and 800 GHz Schottky diode "substrateless" multipliers: design and results

Several sub-millimeter doubler circuits have been designed and built using a new fabrication technology. To reduce the RF losses in the passive circuitry, the substrate under the transmission lines is etched away, leaving the metal suspended in air held by its edges on a GaAs frame. This allows the circuit to be handled and mounted easily, and makes it very robust. To demonstrate this technology, broadband balanced planar doublers have been built and tested at 400 GHz. The next generation 200, 400 and 800 GHz doublers with improved performance are also discussed. The 368-424 GHz circuits were measured and achieved 20% efficiency at 387 GHz. The 3 dB bandwidth of the fix-tuned doubler is around 9%. The maximum output power measured is around 8 mW and drops down to 1 mW at 417 GHz. This represents the highest frequency waveguide based planar doubler to date in the literature.

A 2.5-THz receiver front end for spaceborne applications

The OH radical is an important player in known ozone depletion cycles; however, due to its location in the atmosphere, it must be studied from either a balloon or spaceborne platform. For long-term mapping over large portions of the earth, a spaceborne platform is the most desirable. NASAs Earth Observing System Microwave Limb Sounder instrument is slated to house a 2.5-THz Schottky-diode receiver for such measurements. In this paper, we describe the design, fabrication, and testing of the receiver front end. Measured double-sideband (DSB) receiver noise temperatures of better than 9000 K are reproducibly achieved with all devices of our best design. Estimated mixer noise is 3500-K DSB for optimal bias conditions and at room temperature. Selected components will be used in the first terahertz heterodyne receiver to be flown in space.

A broadband 800 GHz Schottky balanced doubler

A broadband planar Schottky balanced doubler at 800 GHz has been designed and built. The design utilizes two Schottky diodes in a balanced configuration on a 12 /spl mu/m thick gallium arsenide (GaAs) substrate as a supporting frame. This broadband doubler (designed for 735 GHz to 850 GHz) uses a split waveguide block and has a relatively simple, fast, and robust assembly procedure. The doubler achieved /spl ap/10% efficiency at 765 GHz, giving 1.1 mW of peak output power when pumped with about 9 mW of input power at room temperature.

Bias stabilization for resonant tunnel diode oscillators

While resonant tunnel diodes (RTDs) are useful as submillimeter-wave oscillators, circuit design constraints imposed to suppress parasitic bias circuit oscillations have limited output powers to well below 1 mW. We report a 7-GHz RTD oscillator with a shunt regulator for bias circuit stabilization. With regulation, oscillator power is not limited by stability constraints. Regulation elements are readily integrated with RTDs to construct monolithic RTD oscillator arrays. >

Performance of a 1.2 THz frequency tripler using a GaAs frameless membrane monolithic circuit

The first ever planar Schottky diode multiplier working over a THz will be presented in this paper. A tunerless 1.2 THz waveguide frequency tripler has been designed, fabricated and tested. The frequency multiplier consists of a 3 micron-thick GaAs frameless-membrane monolithic circuit, mounted in a split waveguide-block, which includes a built-in Picket-Potter horn. The 1.2 THz membrane tripler is driven by a 400 GHz solid-state chain composed of HEMT based power amplifiers followed by two tunerless planar diode frequency doublers. At room temperature, output power up to 80 microwatts was measured at 1126 GHz with a peak-efficiency of 0.9% and a 3 dB bandwidth of about 3.5%. The output power of the multiplier chain increased dramatically with a decrease of the ambient temperature-up to 195 microwatts was measured at 120 K. When further cooled to 50 K the chain delivers power levels as high as 250 microwatts. To the best of our knowledge, this is the first demonstration of a fully planar multiplier chain at these frequencies, along with performance that supercedes current state-of-the-art performance of whisker-contacted sources.