S. Kämmerer

Co2MnSi Heusler alloy as magnetic electrodes in magnetic tunnel junctions

As a consequence of the growing theoretical predictions of 100% spin-polarized half- and full-Heusler compounds over the past six years, Heusler alloys are among the most promising materials class for future magnetoelectronic and spintronic applications. We have integrated Co2MnSi, as a representative of the full-Heusler compound family, as one magnetic electrode into magnetic tunnel junctions. The preparation strategy has been chosen so as to sputter Co2MnSi at room temperature onto a V-buffer layer, which assists in (110) texture formation, and to deposit the Al-barrier layer directly thereafter. After plasma oxidizing the Al-barrier layer, subsequent annealing leads (1) to the texture formation and (2) to the appropriate atomic ordering within the Co2MnSi, and (3) homogenizes the AlOx barrier. It is shown that the magnetic switching of the ferromagnetic electrodes is well controlled from room temperature down to 10K. The resulting tunnel magnetoresistance-effect amplitude of the Co2MnSi containing magn...

Room-temperature preparation and magnetic behavior of Co2MnSi thin films

Our study presents experimental results on Co2MnSi thin-film preparation and resulting magnetic properties of the Co2MnSi Heusler alloy. The focus of our work is on the important role of the microstructure and the magnetic properties relationships of Co2MnSi thin films prepared using dc magnetron sputtering. We examined the microstructure evolution determined with x-ray diffraction for various substrates, e.g., MgO, SrTiO3, Si and SiO2, at different substrate temperatures. Polycrystalline growth observed at high substrate temperatures is independent of the nature and orientation of the substrate. These films show soft magnetic behavior at a net magnetization of 4.12μB. In contrast, textured growth is obtained at room temperature by introducing a vanadium seed layer. These samples are magnetically harder but possess a magnetization of 0.25μB only. This behavior indicates a two phase film consisting of an amorphous and textured volume. Consequently, sputtering at low argon pressure at high temperature resul...

Inelastic electron tunneling spectroscopy and bias voltage dependence of magnetic tunnel junctions with polycrystalline Co2MnSi electrode

Spintronics needs half-metallic materials implemented in technologically relevant devices. We prepare Co2MnSi/AlOx/Co7Fe3 junctions showing a tunneling magnetoresistance of 94.6% at 1 mV and 20 K. Their inelastic electron tunneling spectra at 20 K show typical magnon and phonon excitations in the electrode and the barrier and an additional shoulder around −22 mV not observed in Co7Fe3/AlOx/Ni81Fe19 reference junctions. Furthermore, the bias voltage and temperature dependence of the tunneling magnetoresistance is considerably larger than for the reference junctions. The transport properties are discussed with respect to a variety of current contributions associated with the structural and magnetic properties of the Co2MnSi/AlOx interface.

Magnetic cobalt nanocrystals organized in patches and chains

~e~~~~~~~,,j~r~~ l~~ vs. field curve 2 i is given in fig. 2. Under E diffemt preparation conditions up to 3hm long f chains consisting of lonm E

Magnetotransport properties of hard magnetic pinned multilayers

Hard magnetic (HM) thin films have been vertically integrated below giant magnetoresistive (GMR) multilayer sensors in order to shift the operating point of an applicable GMR sensor. The shift in maximum magnetoresistance (MR) peaks was found to be dependent on the thickness of the HM layer. As a result of different bias geometries, which have been tested, current shunting effects mainly reduce the maximum MR amplitudes. A strong microstructural influence on the magnetotransport has been found; meander-shaped microstructures with different stripe widths have been microfabricated in order to investigate the influence of shape anisotropy and stray field geometry on the magnetotransport. As a result, the bias strength, as well as the shape of the HM hysteresis, varies with the underlying microstructured pattern geometries and the angle of applied field. Comparing the major MR loops of meanders with 1.5, 5, and 10 μm structure width of HM/GMR systems, different MR behavior has been found. It was determined th...

Magnetic Tunneling Junctions — Materials, Geometry and Applications

The discoveries of antiferromagnetic coupling in Fe/Cr multilayers by Grunberg, the Giant MagnetoResistance by Fert and Grunberg and a large tunnelling magnetoresistance at room temperature by Moodera have triggered enormous research on magnetic thin films and magnetoelectronic devices. Large opportunities are especially opened by the spin dependent tunnelling resistance, where a strong dependence of the tunnelling current on an external magnetic field can be found. Within a short time, the quality of these junctions increased dramatically. We will briefly address important basic properties of these junctions depending on the material stacking sequence of the underlying standard thin film system with special regard to complex interdiffusion properties. New materials with potentially 100% spin polarization will be discussed using the example of the full Heusler compound Co2MnSi, where we obtain up to 100% TMR at low temperature. Next, we discuss scaling issues, i.e. the influence of the geometry of small tunnelling junctions especially on the magnetic switching behaviour down to junction sizes below 0.01 µm2. The last part will give a short overview on field programmable logic circuits made from magnetic tunnelling cells, where we demonstrate the clocked operation of a programmed AND gate.

FMR study of thin films of Co2Cr0.6Fe0.4Al and Co2MnSi Heusler alloys

The method of ferromagnetic resonance (FMR) was used to study magnetic properties of thin films of half-metallic ferromagnetic Heusler alloys Co2Cr0.6Fe0.4Al and Co2MnSi depending on the film thickness and the presence or absence of a vanadium buffer layer. It is shown that the FMR method is a highly efficient technique for studying nanoscale magnetic properties of thin films, especially for the investigation of their magnetic inhomogeneities and anisotropy. Samples of Co2Cr0.6Fe0.4Al and Co2MnSi were prepared by magnetron-sputtering deposition on substrates of single-crystal silicon dioxide (SiO2) with an orientation (100). It has been shown that the magnetic properties of thin Co2Cr0.6Fe0.4Al films strongly depend on both the film thickness (25 or 100 nm) and the presence of an intermediate vanadium layer (50 nm). Well-resolved spin-wave modes were observed in the sample 100 nm thick without a vanadium buffer layer, which made it possible to determine the parameter of spin stiffness D for this ferromagnet. Two series of thin films of Co2MnSi have also been studied, which were prepared on a buffer layer of vanadium (42 nm thick): (1) with various thicknesses (4–100 nm) and a fixed annealing temperature (450°C) and (2) with a fixed thickness (80 nm) and various annealing temperatures (425–550°C). It has been shown that in the series of Co2MnSi films with a variable thickness (4–100 nm) the greatest value of magnetization is reached for a film with a thickness of 61 nm. The investigations of the other series of films, which were annealed at various temperatures, show that to achieve both a greater magnetization and a better structural homogeneity, annealing at temperatures T ≥ 450°C is required. In addition, low-intensity spin-waves were observed in some samples with thicknesses of 100 and 61 nm, which made it possible to estimate the spin-stiffness parameter D for the Co2MnSi Heusler alloy as well.

Heusler materials in magnetic tunnel junctions

Magnetic tunnelling junctions (MTJ) were prepared by magnetron sputtering on thermally oxidized Si (100) wafers at room temperature. Two different half MTJ were grown: V/Co/sub 2/MnSi/Al with plasma oxidation and in situ annealing and the same stack with natural oxidation only. Transport properties like tunnelling magnetoresistance, and X-ray absorption spectra of the two samples were obtained. In the investigated samples, the measured shape of the Mn-L2,3 edges of plasma oxidized sample resulted from the superposition of a signal from MnO/sub x/ and a signal from unoxidized Mn in Heusler alloy.

Impact of geometry and material stacking on the properties of magnetic tunnelling junctions

The discoveries of antiferromagnetic coupling in Fe/Cr multilayers by Grunberg, the Giant MagnetoResistance by Fert and Grunberg and a large tunnelling magnetoresistance at room temperature by Moodera have triggered enormous research on magnetic thin films and magnetoelectronic devices. Large opportunities are especially opened by the spin dependent tunnelling resistance, where a strong dependence of the tunnelling current on an external magnetic field can be found. Within a short time, the quality of these junctions increased dramatically. We will briefly address important basic properties of these junctions depending on the material stacking sequence of the underlying thin film system with special regard to the ferromagnetic electrodes. Next, we discuss scaling issues, i.e. the influence of the geometry of small tunnelling junctions especially on the magnetic switching behaviour down to junction sizes below 0.01 µm2. The last part will give a short overview on applications beyond the use of the tunnelling elements as storage cells in MRAMs. This concerns mainly field programmable logic circuits, where we demonstrate the clocked operation of a programmed AND gate. The second ‘unconventional’ feature is the use as sensing elements in DNA or protein biochips, where molecules marked magnetically with commercial beads can be detected via the dipole stray field in a highly sensitive and relatively simple way.