S. Sohail H. Naqvi

Ellipsometric scatterometry for the metrology of sub-0.1-μm-linewidth structures

We describe a modification to our existing scatterometry technique for extracting the relative phase and amplitude of the electric field diffracted from a grating. This modification represents a novel combination of aspects of ellipsometry and scatterometry to provide improved sensitivity to small variations in the linewidth of subwavelength gratings compared with conventional scatterometer measurements. We present preliminary theoretical and experimental results that illustrate the possibility of the ellipsometric scatterometry technique providing a metrology tool for characterizing sub-0.1-mum-linewidth.

Use of diffracted light from latent images to improve lithography control

As the microelectronics industry strives to achieve smaller device design geometries, control of linewidth, or critical dimension (CD), becomes increasingly important. Currently, CD uniformity is controlled by exposing large numbers of samples for a fixed exposure time which is determined in advance by calibration techniques. This type of control does not accommodate variations in optical properties of the wafers that may occur during manufacturing. In this work, a relationship is demonstrated between the intensity of light diffracted from a latent image consisting of a periodic pattern in the undeveloped photoresist and the amount of energy absorbed by the resist material (the exposure dose). This relationship is used to simulate exposure control of photoresist on surfaces having slight variations in optical properties, representative of those found in operating process lines. We demonstrate that linewidth uniformity of the developed photoresist can be greatly improved when the intensity of diffracted li...

Grating line shape characterization using scatterometry

Identification of dimensional parameters of an arbitrarily shaped grating using scatter characteristics is presented. A rigorous diffraction model is used to predict the scatter from a known grating structure, and utilizing this information we perform the inverse problem of predicting line shape from a measurement of the scatter.

Linewidth measurement of gratings on photomasks: a simple technique

A novel laser scatterometer linewidth measurement tool has been developed for critical dimension metrology of photomasks. Calculation of the linewidth is based on a rigorous theoretical model, thus eliminating the need for calibrations. In addition the effect of the glass substrate on which the photomask grating is placed is explicitly taken into account. The experimental arrangement consists of a chrome photomask diffraction grating that is illuminated with a laser. A rigorous theoretical model is used to provide a lookup table that gives the power in the transmitted zero-order beam as a function of the linewidth for a fixed pitch of the grating. The predicted linewidth values are compared with those that are obtained by using commercial optical linewidth measurement systems, and excellent agreement is obtained.

Scatterometry for CD measurements of etched structures

Scatterometry, the characterization of periodic structures via diffracted light analysis, has been shown to be a versatile technique for measuring critical dimensions in photoresist as small as 0.160 micrometer. Rapid, non-destructive and inexpensive, scatterometry has the potential to be applied to other microlithographic features as well. This paper discusses applications of scatterometry in the measurement of etched sub-um poly-Si line/space patterns. Since etched features represent the final dimensions of a finished product, the characterization of such features is important. Initial attempts at measuring the etched linewidth and height using scatterometry assumed the sidewalls were perfectly vertical. Although results from these two parameter predictions were good, our measurement algorithms suggested that the etch profiles were not square. Thus, sidewall angle was left as an unknown in our model and three parameter predictions were made. These improved results from measuring the linewidth, height and sidewall angle are presented, and comparisons to SEM measurements of the same samples are made. Finally, experiments to determine the repeatability of the scatterometer for measuring etched features were performed. Results show that the repeatability of the instrument, for both static and dynamic measurements of nominal 0.25 micrometer structures, is sub-nanometer for all parameters measured; the 3(sigma) repeatability for static CD measurements is 0.63 nm, and for dynamic measurements is 0.78 nm.

Use of scatterometry for resist process control

The formation of resist lines having submicron critical dimensions (CDs) is a complex multistep process, requiring precise control of each processing step. Optimization of parameters for each processing step may be accomplished through theoretical modeling techniques and/or the use of send-ahead wafers followed by scanning electron microscope measurements. Once the optimum parameters for any process having been selected, (e.g., time duration and temperature for post-exposure bake process), no in-situ CD measurements are made. In this paper we describe the use of scatterometry to provide this essential metrology capability. It involves focusing a laser beam on a periodic grating and predicting the shape of the grating lines from a measurement of the scattered power in the diffraction orders. The inverse prediction of lineshape from a measurement of the scatter power is based on a vector diffraction analysis used in conjunction with photolithography simulation tools to provide an accurate scatter model for latent image gratings. This diffraction technique has previously been applied to looking at latent image grating formation, as exposure is taking place. We have broadened the scope of the application and consider the problem of determination of optimal focus.

Latent image exposure monitor using scatterometry

We discuss the use of light scattered from a latent image to control photoresist exposure dose and focus conditions which results in improved control of the critical dimension (CD) of the developed photoresist. A laser at a nonexposing wavelength is used to illuminate a latent image grating. The light diffracted from the grating is directly related to the exposure dose and focus and thus to the resultant CD in the developed resist. Modeling has been done using rigorous coupled wave analysis to predict the diffraction from a latent image as a function of the substrate optical properties and the photoactive compound (PAC) concentration distribution inside the photoresist. It is possible to use the model to solve the inverse problem: given the diffraction, to predict the parameters of the latent image and hence the developed pattern. This latent image monitor can be implemented in a stepper to monitor exposure in situ, or prior to development to predict the developed CD of a wafer for early detection of bad devices. Experimentation has been conducted using various photoresists and substrates with excellent agreement between theoretical and experimental results. The technique has been used to characterize a test pattern with a focused spot as small as 36 micrometers in diameter. Using diffracted light from a simulated closed-loop control of exposure dose, CD control was improved by as much as four times for substrates with variations in underlying film thickness, compared to using fixed exposure time. The latent image monitor has also been applied to wafers with rough metal substrates and focus optimization.

Sixteen‐megabit dynamic random access memory trench depth characterization using two‐dimensional diffraction analysis

Advances in memory IC technology for dynamic random access memory (DRAM) devices have come about from a reduction in individual cell thickness with a corresponding increase in cell depth in order to maintain the same stored capacitance value. As the memory size on DRAM devices rises, memory cells must get deeper making the process of measuring depth more difficult. In this article we describe a novel, nondestructive, noncontact metrology technique which utilizes both two‐dimensional diffraction analysis and multivariate statistical methods to measure deep trench depth in the 6–9 μm range. We applied this technique to two DRAM product wafers and obtained a successful prediction of trench depth for both wafers with an accuracy of ±0.04 μm, or ±0.56% variation relative to scanning electron microscope measurements of the same samples.

Scatterometry measurement of sub-0.1 μm linewidth gratings

The effort discussed here addresses the use of shorter incident wavelengths for characterizing sub-0.1 μm linewidths and the corresponding influence on scatterometry measurement sensitivity to linewidth variations. A sensitivity metric, based on the variance statistic, was developed using well-characterized, large-pitch (0.80 μm) photoresist grating structures on Si illuminated at 633 and 442 nm. The same metric was applied to short-pitch (0.20 μm), etched gratings on InP, with the result that appreciable scatterometry sensitivity was measured, even at the 633 nm incident wavelength. Modeling was used to estimate scatterometry sensitivity at three wavelengths for photoresist critical dimensions of 100 and 70 nm on Si. A significant increase in sensitivity was not found until the incident wavelength was reduced to 325 nm. We are presently investigating techniques to improve measurement sensitivity for short-pitch structures using the 633 nm incident wavelength.

Multiparameter CD measurements using scatterometry

Scatterometry, the characterization of periodic structures via diffracted light analysis, is shown to be a versatile metrology technique applicable to several processes involved in microlithography. Unlike contemporary inspection technologies, such as scanning force microscopy (SFM) and scanning electron microscopy (SEM), scatterometry is rapid, non- destructive, inexpensive and has the potential for use in-situ. Furthermore, the flexibility of the technique allows it to be used for a number of different process measurements. In the production of a sub-micron microelectronic device, a typical series of process steps could involve the deposition of a poly-Si layer on oxide, followed by the application of an anti- reflection coating (ARC) and resist layer. Thus in total there are four parameters which will ultimately affect the overall quality of subsequent processing: the linewidth of the resist, the resist height, and the thicknesses of the ARC and poly-Si. We have demonstrated that the scatterometer measurement technique is robust to changes in the thickness of underlying films. Indeed, there is sufficient information in one signature to determine four parameters at once, even when the linewidth dimensions are as small as 0.16 micrometer and the poly-Si thickness is on the order of 2500 angstrom. Results from determining these dimensions on several wafers show excellent agreement between the scatterometry measurements and measurements made with other metrology instruments (top down and cross-section SEM, and ellipsometer). For example, the average bias between nine scatterometry and cross-section SEM measurements on nominal 0.35 micrometer lines is minus 1.7 nm; for 0.25 micrometer lines, the average difference is minus 7.3 nm. In addition, results from measuring the sidewall angle (a fifth parameter) from these same scatter signatures indicate that the resist profiles at optimum focus and exposure are near-vertical. Finally, the dynamic repeatability of this technique is shown to be excellent for all of the parameters measured (linewidth, resist height, ARC thickness and poly thickness). For example, the 3(sigma) repeatability of measurements on a 207 nm linewidth is 0.75 nm and the 3 sigma repeatability for measurements on a 311 nm linewidth is 1.08 nm.