Saeed Fallahi

Noise Suppression Using Symmetric Exchange Gates in Spin Qubits

We demonstrate a substantial improvement in the spin-exchange gate using symmetric control instead of conventional detuning in GaAs spin qubits, up to a factor of six increase in the quality factor of the gate. For symmetric operation, nanosecond voltage pulses are applied to the barrier that controls the interdot potential between quantum dots, modulating the exchange interaction while maintaining symmetry between the dots. Excellent agreement is found with a model that separately includes electrical and nuclear noise sources for both detuning and symmetric gating schemes. Unlike exchange control via detuning, the decoherence of symmetric exchange rotations is dominated by rotation-axis fluctuations due to nuclear field noise rather than direct exchange noise.

High-fidelity entangling gate for double-quantum-dot spin qubits

Electron spins in semiconductors are promising qubits because their long coherence times enable nearly 109 coherent quantum gate operations. However, developing a scalable high-fidelity two-qubit gate remains challenging. Here, we demonstrate an entangling gate between two double-quantum-dot spin qubits in GaAs by using a magnetic field gradient between the two dots in each qubit to suppress decoherence due to charge noise. When the magnetic gradient dominates the voltage-controlled exchange interaction between electrons, qubit coherence times increase by an order of magnitude. Using randomized benchmarking, we measure single-qubit gate fidelities of ~ 99%, and through self-consistent quantum measurement, state, and process tomography, we measure an entangling gate fidelity of 90%. In the future, operating double quantum dot spin qubits with large gradients in nuclear-spin-free materials, such as Si, should enable a two-qubit gate fidelity surpassing the threshold for fault-tolerant quantum information processing.Quantum computing: high-fidelity two-qubit entangling gateScientists have invented a new way to entangle electron spins. Entanglement, or “spooky action at a distance,” is one of the key requirements for a universal quantum computer, because it enables the transfer of information between quantum bits, or qubits. For qubits consisting of electron spins trapped in semiconductors, the Coulomb interaction between electrons can be harnessed to create entanglement. In this approach, however, the coherence of the individual spins is susceptible to spurious charge noise in the semiconductor. Amir Yacoby and colleagues at Harvard University and Purdue University overcame this challenge by using a large magnetic field gradient in a double-quantum-dot spin qubit to suppress the effects charge noise. By mitigating charge-noise-induced decoherence, the team demonstrated a two-qubit entangling gate fidelity of 90%. This high-fidelity entangling operation marks a significant milestone for spin qubits and points the way toward a scalable high-fidelity spin-based quantum computer.

Notch filtering the nuclear environment of a spin qubit

Electron spins in gate-defined quantum dots provide a promising platform for quantum computation. In particular, spin-based quantum computing in gallium arsenide takes advantage of the high quality of semiconducting materials, reliability in fabricating arrays of quantum dots and accurate qubit operations. However, the effective magnetic noise arising from the hyperfine interaction with uncontrolled nuclear spins in the host lattice constitutes a major source of decoherence. Low-frequency nuclear noise, responsible for fast (10 ns) inhomogeneous dephasing, can be removed by echo techniques. High-frequency nuclear noise, recently studied via echo revivals, occurs in narrow-frequency bands related to differences in Larmor precession of the three isotopes 69Ga, 71Ga and 75As (refs 15,16,17). Here, we show that both low- and high-frequency nuclear noise can be filtered by appropriate dynamical decoupling sequences, resulting in a substantial enhancement of spin qubit coherence times. Using nuclear notch filtering, we demonstrate a spin coherence time (T2) of 0.87 ms, five orders of magnitude longer than typical exchange gate times, and exceeding the longest coherence times reported to date in Si/SiGe gate-defined quantum dots.

Negative Spin Exchange in a Multielectron Quantum Dot

We use a one-electron quantum dot as a spectroscopic probe to study the spin properties of a gate-controlled multielectron GaAs quantum dot at the transition between odd and even occupation numbers. We observe that the multielectron ground-state transitions from spin-1/2-like to singletlike to tripletlike as we increase the detuning towards the next higher charge state. The sign reversal in the inferred exchange energy persists at zero magnetic field, and the exchange strength is tunable by gate voltages and in-plane magnetic fields. Complementing spin leakage spectroscopy data, the inspection of coherent multielectron spin exchange oscillations provides further evidence for the sign reversal and, inferentially, for the importance of nontrivial multielectron spin exchange correlations.

Symmetric operation of the resonant exchange qubit

We operate a resonant exchange qubit in a highly symmetric triple-dot configuration using IQ-modulated RF pulses. At the resulting three-dimensional sweet spot the qubit splitting is an order of magnitude less sensitive to all relevant control voltages, compared to the conventional operating point, but we observe no significant improvement in the quality of Rabi oscillations. For weak driving this is consistent with Overhauser field fluctuations modulating the qubit splitting. For strong driving we infer that effective voltage noise modulates the coupling strength between RF drive and the qubit, thereby quickening Rabi decay. Application of CPMG dynamical decoupling sequences consisting of up to n = 32 {\pi} pulses significantly prolongs qubit coherence, leading to marginally longer dephasing times in the symmetric configuration. This is consistent with dynamical decoupling from low frequency noise, but quantitatively cannot be explained by effective gate voltage noise and Overhauser field fluctuations alone. Our results inform recent strategies for the utilization of partial sweet spots in the operation and long-distance coupling of triple-dot qubits.

Possible nematic to smectic phase transition in a two-dimensional electron gas at half-filling

Liquid crystalline phases of matter permeate nature and technology, with examples ranging from cell membranes to liquid-crystal displays. Remarkably, electronic liquid-crystal phases can exist in two-dimensional electron systems (2DES) at half Landau-level filling in the quantum Hall regime. Theory has predicted the existence of a liquid-crystal smectic phase that breaks both rotational and translational symmetries. However, previous experiments in 2DES are most consistent with an anisotropic nematic phase breaking only rotational symmetry. Here we report three transport phenomena at half-filling in ultra-low disorder 2DES: a non-monotonic temperature dependence of the sample resistance, dramatic onset of large time-dependent resistance fluctuations, and a sharp feature in the differential resistance suggestive of depinning. These data suggest that a sequence of symmetry-breaking phase transitions occurs as temperature is lowered: first a transition from an isotropic liquid to a nematic phase and finally to a liquid-crystal smectic phase.In the quantum Hall regime, strong interactions lead to the formation of unconventional spatially ordered electronic states. Qian et al. present evidence for a progressive sequence of transitions from isotropic through nematic to smectic phases in half-filled quantum Hall states.

Quantum lifetime in ultrahigh quality GaAs quantum wells: Relationship to Δ 5 / 2 and impact of density fluctuations

We consider quantum lifetime derived from low-field Shubnikov-de Haas oscillations as a metric of quality of the two-dimensional electron gas in GaAs quantum wells that expresses large excitation gaps in the fractional quantum Hall states of the N=1 Landau level. Analysis indicates two salient features: 1) small density inhomogeneities dramatically impact the amplitude of Shubnikov-de Haas oscillations such that the canonical method (cf. Coleridge, Phys. Rev. B \textbf{44}, 3793) for determination of quantum lifetime substantially underestimates

High-temperature resistivity measured at ν=52 as a predictor of the two-dimensional electron gas quality in the N=1 Landau level

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MilliKelvin HEMT Amplifiers for Low Noise High Bandwidth Measurement of Quantum Devices.

unless density inhomogeneity is explicitly considered; 2)

Direct entropy measurement in a mesoscopic quantum system

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