Sang Choon Ko

Micromachined air-gap structure MEMS acoustic sensor using reproducible high-speed lateral etching and CMP process

This paper presents a micromachined air-gap structure microelectromechanical systems (MEMS) acoustic sensor, which is fabricated via assisted high-speed lateral etching and chemical mechanical polishing (CMP). A sandwich structure (LTO/P2O5/LTO) as a sacrificial layer for the releasing process is proposed to produce an air-gap structure MEMS acoustic sensor. This sandwich structure can be etched selectively in a specific patterned P2O5 layer. In addition, the sandwich structure proved superior to using only low temperature oxide (LTO) layer for the releasing process. We confirmed that the proposed releasing method assisted by lateral etching and CMP is very effective for creating a clean air-gap cavity in MEMS devices. In this work, the air-gap structure MEMS acoustic sensor is based on the capacitance change of a movable thin poly-silicon membrane. A high-gain impedance converter was mounted on a printed circuit board (PCB) with a silicon MEMS acoustic sensor to transform the electrical signal for input acoustic pressure. The membrane size of the MEMS acoustic sensor was 1.5 × 1.5 mm2. The sensitivity achieved was about 0.018–5.17 mV Pa−1. The noise level of the fabricated device was 10 µV Pa−1.

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A large GaN-Schottky barrier diode (SBD) with a recessed dual anode metal is proposed to achieve improved the forward characteristics without a degradation of the reverse performances. Using optimized dry etch condition for a large device, the electrical characteristics of the device are demonstrated when applying the recessed dual anode metal and changing the recess depths. The device size and channel width are 4 mm2 and 63 mm, respectively. The 16-nm recessed dual anode metal SBD has a turn-ON voltage of 0.34 V, a breakdown voltage of 802 V, and a reverse leakage current of 1.82 μA/mm at -15 V. The packaged SBD exhibits a forward current of 6.2 A at 2 V and a reverse recovery charge of 11.54 nC.

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We present a method of forming shallow p-doping on a 4H-SiC surface by depositing a thin Al layer (d = 5 nm) and then thermally annealing it at 1000 °C for 10 min. A secondary ion mass spectrometry analysis of the annealed Al/SiC sample reveals an Al concentration in excess of 1017 cm−3 up to a depth of d ≤ 250 nm. I–V measurements and CV characterizations of Ti-SiC Schottky barrier diodes (SBDs) fabricated on a n-type SiC epi-wafer indicate that the shallow Al doping increases the built-in potential of the junction and the barrier height by ΔVbi=0.51 eV and ΔϕB=0.26 eV, respectively. Assuming a rectangular doping profile, calculations of the built-in voltage shift and the Schottky barrier height indicate that partial dopant activation (activation ratio ∼2%) can induce the observed barrier height shift. The shallow doping method was then used to fabricate junction terminations in SBDs which increased the breakdown voltage and reduced the reverse leakage current. Technology CAD simulations of the SBD with ...

AlGaN/GaN-on-Si Large Schottky Barrier Diode With Recessed Dual Anode Metal

Bonding-pad electrode-area-etched AlGaN/GaN on a Si-based Schottky barrier diode (SBD) is fabricated. Electrode mesa etching leads to reverse bias leakage current about one order of magnitude lower than that of SBD without electrode mesa etching, but forward currents do not vary greatly, compared with that in conventional SBD, which has no electrode mesa etching.