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Dive into the research topics where Satoru Mitani is active.

Publication


Featured researches published by Satoru Mitani.


international electron devices meeting | 2011

Demonstration of high-density ReRAM ensuring 10-year retention at 85°C based on a newly developed reliability model

Z. Wei; Takeshi Takagi; Yoshihiko Kanzawa; Yoshikazu Katoh; Takeki Ninomiya; Ken Kawai; Shunsaku Muraoka; Satoru Mitani; Koji Katayama; Satoru Fujii; Ryoko Miyanaga; Yoshio Kawashima; Takumi Mikawa; Kazuhiko Shimakawa; Kunitoshi Aono

A new oxygen diffusion reliability model for a high-density bipolar ReRAM is developed based on hopping conduction in filaments, which allows statistical predication of activation energy. The filament in the active cells is confirmed by EBAC and TEM directly for the first time. With optimized filament size, a 256-kbit ReRAM with long-term retention exceeding 10 years at 85°C is successfully demonstrated.


international electron devices meeting | 2007

Fast switching and long retention Fe-O ReRAM and its switching mechanism

Shunsaku Muraoka; K. Osano; Yoshihiko Kanzawa; Satoru Mitani; Satoru Fujii; Koji Katayama; Yoshikazu Katoh; Z. Wei; Takumi Mikawa; K. Arita; Yoshio Kawashima; Ryotaro Azuma; Ken Kawai; Kazuhiko Shimakawa; A. Odagawa; Takeshi Takagi

A novel iron oxide (Fe-O) ReRAM is proposed and its high-speed resistance-switching of 10 ns is demonstrated. The switching mechanism is confirmed as a redox reaction between Fe<sub>3</sub>O<sub>4</sub> and y-Fe<sub>2</sub>O<sub>3</sub>. Based on this model, we have achieved long-retention characteristics by introducing Zn atoms to suppress the reduction process.


international memory workshop | 2012

Retention Model for High-Density ReRAM

Z. Wei; Takeshi Takagi; Yoshihiko Kanzawa; Yoshikazu Katoh; Takeki Ninomiya; Ken Kawai; Shunsaku Muraoka; Satoru Mitani; Koji Katayama; Satoru Fujii; Ryoko Miyanaga; Yoshio Kawashima; Takumi Mikawa; Kazuhiko Shimakawa; Kunitoshi Aono

A retention model for both the high resistance state and low resistance state of the bipolar ReRAM is developed. Degradation of resistance is caused by the oxygen vacancy profile in filament changing due to oxygen diffusion.


Archive | 2008

Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using the nonvolatile memory element

Yoshihiko Kanzawa; Koji Katayama; Satoru Fujii; Shunsaku Muraoka; Koichi Osano; Satoru Mitani; Ryoko Miyanaga; Takeshi Takagi; Kazuhiko Shimakawa


Archive | 2008

NONVOLATILE STORAGE ELEMENT, ITS MANUFACTURING METHOD, AND NONVOLATILE SEMICONDUCTOR DEVICE USING THE NONVOLATILE STORAGE ELEMENT

Yoshihiko Kanzawa; Koji Katayama; Satoru Fujii; Shunsaku Muraoka; Koichi Osano; Satoru Mitani; Ryoko Miyanaga; Takeshi Takagi; Kazuhiko Shimakawa


Archive | 2007

NONVOLATILE MEMORY ELEMENT, NONVOLATILE MEMORY DEVICE, NONVOLATILE SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING NONVOLATILE MEMORY ELEMENT

Satoru Fujii; Koji Arita; Satoru Mitani; Takumi Mikawa


Archive | 2006

Electric element, memory device, and semiconductor integrated circuit

Koichi Matsushita Electric Industrial Co. Ltd Osano; Shunsaku Matsushita Electric Industrial Co. Ltd Muraoka; Satoru Mitani; Kumio Nago


Archive | 2009

Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor device incorporating nonvolatile memory element

Satoru Mitani; Yoshihiko Kanzawa; Koji Katayama; Takeshi Takagi


Archive | 2006

Memory device and semiconductor integrated circuit

Shunsaku Muraoka; Koichi Osano; Satoru Mitani; Hiroshi Seki


Archive | 2013

VARIABLE RESISTANCE NONVOLATILE STORAGE DEVICE AND METHOD OF FORMING MEMORY CELL

Shunsaku Muraoka; Yoshihiko Kanzawa; Satoru Mitani; Koji Katayama; Kazuhiko Shimakawa; Satoru Fujii; Takeshi Takagi

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