Satoshi Haraichi
Hitachi
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Publication
Featured researches published by Satoshi Haraichi.
Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms | 1989
Hiroshi Yamaguchi; Akira Shimase; Satoshi Haraichi; Mitsuo Usami; Takahiko Takahashi
Abstract A comparison was made between laser evaporation-explosion and focused ion beam (FIB) sputter etching for cutting of conductors on VLSI chips. In laser cutting, thin film layers underlying the conductors and the neighboring area are liable to be damaged because of its evaporation-explosion mechanism. FIB etching has not only a submicron focusing ability but also little material dependence in its etching characteristics. Therefore, FIB cutting is more advantageous for applications to fine pattern and multilayer conductor systems in VLSIs. Under these considerations, FIB conductor cutting was successfully carried out for VLSI circuits debugging, and the effectiveness and usefulness of FIB cutting were demonstrated.
International Journal of The Japan Society for Precision Engineering | 1992
Fumikazu Itoh; Akira Shimase; Satoshi Haraichi; Takahiko Takahashi
During debugging logic LSIs, a period to reproduce LSI in order to change the logic design is becoming longer. To reduce the period from several weeks down to one day, an on-chip direct wiring modification system, using the focused ion beam (FIB) milling and the laser CVD, has been developed.This paper describes a precise FIB milling technique for cutting the wirings and making the via holes to the wirings of the LSI. Milling depth control by monitoring the ion induced photo-emissions and the milling strategy to overcome the surface steps of the LSI resulted in the milling depth accuracy of ±0.25μm. The system, consist of the FIB milling described in this paper and the laser CVD, has been applied to the logic modification of the LSIs of Hitachi M880 mainframe computer. Several tens of cuts, vias on an LSI chip were made by FIB, and the several jumper wirings were made by laser CVD. The average yield of modified LSI chips of 91.8% was achieved.
Archive | 2001
Takahiko Takahashi; Funikazu Itoh; Akira Shimase; Hiroshi Yamaguchi; Mikio Hongo; Satoshi Haraichi
Archive | 1989
Satoshi Haraichi; Fumikazu Itoh; Akira Shimase; Takahiko Takahashi
Archive | 1994
Junzou Azuma; Fumikazu Itoh; Satoshi Haraichi; Akira Shimase; Junichi Mori; Takahiko Takahashi; Emiko Uda
Archive | 1987
Hiroshi Yamaguchi; Mikio Hongo; Tateoki Miyauchi; Akira Shimase; Satoshi Haraichi; Takahiko Takahashi; Keiya Saito
Archive | 1990
Takahiko Takahashi; Fumikazu Itoh; Akira Shimase; Mikio Hongo; Satoshi Haraichi; Hiroshi Yamaguchi
Archive | 1989
Fumikazu Itoh; Akira Shimase; Satoshi Haraichi; Takahiko Takahashi; Mikio Hongo
Archive | 1992
Satoshi Haraichi; Fumikazu Itoh; Akira Shimase; Hiroshi Yamaguchi; Junzou Azuma; Yasuhiro Koizumi
Archive | 1985
Akira Shimase; Hiroshi Yamaguchi; Satoshi Haraichi; Tateoki Miyauchi