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Scott R Kern

Philips Lumileds Lighting Company

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Featured researches published by Scott R Kern.

Archive | 2001

Formation of ohmic contats in III-Nitride light emitting devices

Changhua Chen; Gina L. Christenson; Michael D. Camras; Werner K. Goetz; Scott R Kern; C. P. Kuo; Paul S. Martin; Daniel A. Steigerwald

Archive | 2002

Gallium-indium smooth structure for iii nitride device

Michael D. Camras; Nathan F. Gardner; Werner Goetz; Scott R Kern; Andrew Y. Kim; Stephen A. Stockman; スコットカーンアール; ワイキムアンドリュー; エイストックマンスチーブン; エフガードナーナザン; ディーカムラスマイケル; ケイゴーツワーナー

Archive | 2002

Light emitting group III-nitride arrangement comprises substrate, an n-region lying on substrate, an active region lying over the n-region, smooth layer containing indium arranged between the substrate and active region, and spacer layer

Werner Goetz; Michael D. Camras; Nathan F. Gardner; Scott R Kern; Andrew Y. Kim; Stephen A. Stockman

Archive | 2002

Light emitting III-nitride arrangement used as light emitting diode comprises a substrate, an n-region lying on substrate, an active region lying on n-region, and a smooth region containing indium between substrate and active region

Werner Goetz; Michael D. Camras; Nathan F. Gardner; Scott R Kern; Andrew Y. Kim; Stephen A. Stockman

Archive | 2002

Licht emittierende III-Nitrid-Anordnungen mit niedriger Ansteuerspannung und Herstellverfahren dafür

Werner Goetz; Nathan F. Gardner; Scott R Kern; Andrew Y. Kim; Anneli Munkholm; Stephen A. Stockman; Christopher P. Kocot; Richard P. Schneider

Archive | 2002

Method of forming ohmic contact in iii-nitride light- emitting device

Michael D. Camras; Changhua Chen; Gina L Christenson; Werner Goetz; Scott R Kern; C. P. Kuo; Paul S. Martin; Daniel A. Steigerwald; スコットカーンアール; エルクリステンソンジーナ; エイスタイガーワルドダニエル; クオチーピング; チェンチャングーア; スコットマーティンポール; ディーカムラスマイケル; ケイゲッツワーナー

Archive | 2002