Sean M. Spillane

Ultra-high-Q toroid microcavities on a chip

The circulation of light within dielectric volumes enables storage of optical power near specific resonant frequencies and is important in a wide range of fields including cavity quantum electrodynamics, photonics, biosensing and nonlinear optics. Optical trajectories occur near the interface of the volume with its surroundings, making their performance strongly dependent upon interface quality. With a nearly atomic-scale surface finish, surface-tension-induced microcavities such as liquid droplets or spheres are superior to all other dielectric microresonant structures when comparing photon lifetime or, equivalently, cavity Q factor. Despite these advantageous properties, the physical characteristics of such systems are not easily controlled during fabrication. It is known that wafer-based processing of resonators can achieve parallel processing and control, as well as integration with other functions. However, such resonators-on-a-chip suffer from Q factors that are many orders of magnitude lower than for surface-tension-induced microcavities, making them unsuitable for ultra-high-Q experiments. Here we demonstrate a process for producing silica toroid-shaped microresonators-on-a-chip with Q factors in excess of 100 million using a combination of lithography, dry etching and a selective reflow process. Such a high Q value was previously attainable only by droplets or microspheres and represents an improvement of nearly four orders of magnitude over previous chip-based resonators.

Ultralow-threshold Raman laser using a spherical dielectric microcavity

The ability to confine and store optical energy in small volumes has implications in fields ranging from cavity quantum electrodynamics to photonics. Of all cavity geometries, micrometre-sized dielectric spherical resonators are the best in terms of their ability to store energy for long periods of time within small volumes. In the sphere, light orbits near the surface, where long confinement times (high Q) effectively wrap a large interaction distance into a tiny volume. This characteristic makes such resonators uniquely suited for studies of nonlinear coupling of light with matter. Early work recognized these attributes through Raman excitation in microdroplets—but microdroplets have not been used in practical applications. Here we demonstrate a micrometre-scale, nonlinear Raman source that has a highly efficient pump–signal conversion (higher than 35%) and pump thresholds nearly 1,000 times lower than shown before. This represents a route to compact, ultralow-threshold sources for numerous wavelength bands that are usually difficult to access. Equally important, this system can provide a compact and simple building block for studying nonlinear optical effects and the quantum aspects of light.

Ultrahigh-Q toroidal microresonators for cavity quantum electrodynamics

We investigate the suitability of toroidal microcavities for strong-coupling cavity quantum electrodynamics (QED). Numerical modeling of the optical modes demonstrate a significant reduction of the modal volume with respect to the whispering gallery modes of dielectric spheres, while retaining the high-quality factors representative of spherical cavities. The extra degree of freedom of toroid microcavities can be used to achieve improved cavity QED characteristics. Numerical results for atom-cavity coupling strength g, critical atom number No, and critical photon number no for cesium are calculated and shown to exceed values currently possible using Fabry-Perot cavities. Modeling predicts coupling rates g/2π exceeding 700 MHz and critical atom numbers approaching 10^(-7) in optimized structures. Furthermore, preliminary experimental measurements of toroidal cavities at a wavelength of 852 nm indicate that quality factors in excess of 108 can be obtained in a 50-µm principal diameter cavity, which would result in strong-coupling values of (g/(2π),n(0),N-0) = (86 MHz, 4.6 x 10^(-4), 1.0 x 10^(-3)).

Modal coupling in traveling-wave resonators

High-Q traveling-wave-resonators can enter a regime in which even minute scattering amplitudes associated with either bulk or surface imperfections can drive the system into the so-called strong modal coupling regime. Resonators that enter this regime have their coupling properties radically altered and can mimic a narrowband reflector. We experimentally confirm recently predicted deviations from criticality in such strongly coupled systems. Observations of resonators that had Q>10(8) and modal coupling parameters as large as 30 were shown to reflect more than 94% of an incoming optical signal within a narrow bandwidth of 40 MHz.

Demonstration of ultra-high-Q small mode volume toroid microcavities on a chip

Optical microcavities confine light spatially and temporally and find application in a wide range of fundamental and applied studies. In many areas, the microcavity figure of merit is not only determined by photon lifetime (or the equivalent quality-factor, Q), but also by simultaneous achievement of small mode volume (V). Here we demonstrate ultra-high Q-factor small mode volume toroid microcavities on-a-chip, which exhibit a Q/V factor of more than 10^6 (lambda/n)^–3. These values are the highest reported to date for any chip-based microcavity. A corresponding Purcell factor in excess of 200,000 and a cavity finesse of > 2.8×10^6 is achieved, demonstrating that toroid microcavities are promising candidates for studies of the Purcell effect, cavity QED or biochemical sensing.

Ultralow-threshold microcavity Raman laser on a microelectronic chip

Using ultrahigh-Q toroid microcavities on a chip, we demonstrate a monolithic microcavity Raman laser. Cavity photon lifetimes in excess of 100 ns combined with mode volumes typically of less than 1000 (microm)3 significantly reduce the threshold for stimulated Raman scattering. In conjunction with the high ideality of a tapered optical fiber coupling junction, stimulated Raman lasing is observed at an ultralow threshold (as low as 74 microW of fiber-launched power at 1550 nm) with high efficiency (up to 45% at the critical coupling point) in good agreement with theoretical modeling. Equally important, the wafer-scale nature of these devices should permit integration with other photonic, mechanical, or electrical functionality on a chip.

Fabrication and coupling to planar high-Q silica disk microcavities

Using standard lithographic techniques, we demonstrate fabrication of silica disk microcavities, which exhibit whispering-gallery-type modes having quality factors (Q) in excess of 1 million. Efficient coupling (high extinction at critical coupling and low, nonresonant insertion loss) to and from the disk structure is achieved by the use of tapered optical fibers. The observed high Q is attributed to the wedged-shaped edge of the disk microcavity, which is believed to isolate modes from the disk perimeter and thereby reduce scattering loss. The mode spectrum is measured and the influence of planar confinement on the mode structure is investigated. We analyze the use of these resonators for very low loss devices, such as add/drop filters.

Erbium-doped and Raman microlasers on a silicon chip fabricated by the sol–gel process

We report high-Q sol–gel microresonators on silicon chips, fabricated directly from a sol–gel layer deposited onto a silicon substrate. Quality factors as high as 2.5×10^7 at 1561 nm were obtained in toroidal microcavities formed of silica sol–gel, which allowed Raman lasing at absorbed pump powers below 1 mW. Additionally, Er3+-doped microlasers were fabricated from Er3+-doped sol–gel layers with control of the laser dynamics possible by varying the erbium concentration of the starting sol–gel material. Continuous lasing with a threshold of 660 nW for erbium-doped microlaser was also obtained.

A Nanophotonic Interconnect for High-Performance Many-Core Computation

Silicon nanophotonics holds the promise of revolutionizing computing by enabling parallel architectures that combine unprecedented performance and ease of use with affordable power consumption. Here we describe the results of a detailed multiyear design study of dense wavelength division multiplexing (DWDM) on-chip and off-chip interconnects and the device technologies that could improve computing performance by a factor of 20 above industry projections over the next decade.

Spontaneous parametric down-conversion in periodically poled KTP waveguides and bulk crystals

We present a theoretical and experimental comparison of spontaneous parametric down-conversion in periodically poled waveguides and bulk KTP crystals. We measured a waveguide pair generation rate of 2.9.10(6) pairs/s per mWof pump in a 1-nm band: more than 50 times higher than the bulk crystal generation rate.