Seokyong Hong

A multi-mode multi-band CMOS direct-conversion mobile-TV tuner for DVB-H/T and T-DMB/DAB applications

A fully integrated direct-conversion mobile-TV tuner for DVB-H/T and T-DMB/DAB applications was fabricated using 0.18 um CMOS process. This tuner has the good SNR and immunity performance over wide dynamic range for multi-band and multi-mode applications with the automatic gain control and calibration schemes. The power consumption is 127 mW for VHF and UHF, and 135 mW for L-band at 1.8 V supply voltage.

Si-based optical I/O for optical memory interface

Optical interconnects may provide solutions to the capacity-bandwidth trade-off of recent memory interface systems. For cost-effective optical memory interfaces, Samsung Electronics has been developing silicon photonics platforms on memory-compatible bulk-Si 300-mm wafers. The waveguide of 0.6 dB/mm propagation loss, vertical grating coupler of 2.7 dB coupling loss, modulator of 10 Gbps speed, and Ge/Si photodiode of 12.5 Gbps bandwidth have been achieved on the bulk-Si platform. 2x6.4 Gbps electrical driver circuits have been also fabricated using a CMOS process.

A 1.2V 57mW mobile ISDB-T SoC in 90nm CMOS

This paper presents a 1.2 V 57 mW SoC using a 90 nm CMOS process in mobile ISDB-T application. This achieves −98.5 dBm sensitivity at QPSK, CR = −2/3 with 2.5 dB NF of RF tuner block and 5.6 dB C/N of OFDM block at UHF-band. To integrate RF tuner and OFDM in a small single die, a wideband single LC-VCO operating from 1.8 GHz to 3.3 GHz is proposed and OFDM is designed by hard-wired logic.

A Fully Integrated Low-IF Image Reject Receiver for T-DMB and DAB Applications

This paper describes a fully integrated low-IF image reject receiver for triple-band T-DMB and DAB applications. The receiver features an efficient local oscillator (LO) frequency planning using a wideband low phase noise voltage-controlled oscillator (VCO) for improved low-IF receiver performance. The tuning range of the VCO is measured from 2.65 to 3.95GHz covering all the required frequency bands (Band-II, Band-Ill, and L-Band). The receiver shows a measured noise figure (NF) of under 2dB, thereby achieving a sensitivity of lower than -100dBm with 100mW power consumption. The maximum input signal level of the receiver is lOdBm, resulting in HOdB dynamic range. Total image rejection of over 50dB is achieved. The receiver is fabricated in a 0.25-mum BiCMOS process and packaged in a 5mm x 5mm 32-pin MLF package.

A 1.8dB NF 300mW SiP for 2.6GHz diversity S-DMB application

This paper presents a 1.8V 300mW System-In-Package (SiP) solution in mobile S-DMB application. This achieves a 1.8 dB noise figure at 2.6GHz, while the measured sensitivity is −101 dBm at diversity mode. The SiP is integrated RF tuner, demodulator, SDRAM and other passive components. An internal AGC is integrated for over 100dB dynamic range. The SiP is 196 pins LFBGA and the size is 10 mm × 10 mm × 1.3 mm. The SiP consumes 300mW.