Seong-sik Shin

Effects of Plasma Process Induced Damages on Organic Gate Dielectrics of Organic Thin-Film Transistors

The effects of plasma damages on the organic gate dielectric of the organic thin film transistor (OTFT) during the fabrication process are investigated; metal deposition process on the organic gate insulator by the plasma sputtering mainly generates the process induced damage of bottom contact structured OTFT. For this study, two different deposition methods (thermal evaporation and plasma sputtering) have been tested for their damage effects onto poly(4-vinyl phenol) (PVP) as organic gate dielectric. Unlike thermal evaporation, conventional plasma sputtering process induces serious damages onto the organic layer as increasing the surface energy, changing the surface morphology and degrading OTFT performances.

Transflective Liquid Crystal Display with Single Cell Gap in Patterned Vertically Aligned Mode

We propose a novel transflective liquid crystal display (LCD) configuration with a single cell gap in a patterned vertically aligned (PVA) mode. In this work, the optical path difference in a single cell gap is simply compensated by introducing pixel electrode structures between transmissive and reflective parts in a PVA mode. In addition, our transflective LCD was constructed with the same optical configuration such as that of polarizers and retardation films over the whole panel area. The simulated and measured electro-optic characteristics in the transmissive and reflective parts of our novel transflective LCD have shown good agreement with each other over the whole gray scale range.

P-120: Tight Bonding of Two Plastic Substrates for Flexible LCDs

a novel technique to maintain a constant cell gap of the flexible LCD under various external distortions. The two flexible substrates were assembled tightly by the UV curable polymer placed on top of rigid pillar spacer array. In this technique, we designed the columnar micro-structure to lead the self-collected construct of adhesive polymer which promotes the good adhesion and high mechanical stability against the external deformations.