Sergey V. Novikov

Liquid phase electroepitaxy of III–V semiconductors

Abstract The basic principles, main results and perspectives of liquid phase electroepitaxy (LPEE) as a growth method for binary and multicomponent III–V semiconductor layers and bulk crystals are analysed.

Liquid phase epitaxy (LPE) of GaAs from the Ga-Bi solutions

Liquid phase epitaxy (LPE) has been carried out from the mixed Ga+Bi solution of different thickness to improve GaAs epilayer surface morphology and the growth process control. The difference between thin and thick solutions has been demonstrated. The process occurring during epitaxy of GaAs layers growth in a non-stationary LPE system from a molten Ga-Bi solution has been studied. Results obtained from thin and thick liquid phase epitaxy has been compared with the diffusion limited compound semiconductor epitaxial growth model. The results revealed that there are two anomalous kinetics growth zones of solvent composition in which the growth rate is unpredictable by diffusion theory of LPE. A model of the LPE growth from Ga-Bi solutions has been suggested, that take into account complex shape of the liquids curve of the Ga-Bi-As system and changes in the mass transfer process occurring in the microinhomogeneous liquid phase. Electrical and optical property of GaAs epitaxial layer grown from mixed Ga-Bi solvent was studied and discussed. The results from two laboratories that used different experimental methods have been compared.