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Featured researches published by Seungpil Lee.


international solid-state circuits conference | 2012

128Gb 3b/cell NAND flash memory in 19nm technology with 18MB/s write rate and 400Mb/s toggle mode

Yan Li; Seungpil Lee; Ken Oowada; Hao Nguyen; Qui Nguyen; Nima Mokhlesi; Cynthia Hsu; Jason Li; Venky Ramachandra; Teruhiko Kamei; Masaaki Higashitani; Tuan Pham; Mitsuaki Honma; Yoshihisa Watanabe; Kazumi Ino; Binh Le; Byungki Woo; Khin Htoo; Tai-Yuan Tseng; Long Pham; Frank Tsai; Kwang-ho Kim; Yi-Chieh Chen; Min She; Jong Yuh; Alex Chu; Chen Chen; Ruchi Puri; Hung-Szu Lin; Yi-Fang Chen

This paper addresses challenges with improvements made over previous NAND generations to achieve high performance while maintaining a low fail-bit count (FBC) and cost savings from an improved architecture and tightly packed peripheral circuits. Air gap [2,3] technology further improves write throughput by reducing neighbor interference and WL RC. A toggle mode 400Mb/s I/O interface reduces system overhead and enhances overall performance.


international solid-state circuits conference | 2009

A 113mm2 32Gb 3b/cell NAND flash memory

Takuya Futatsuyama; Norihiro Fujita; Naoya Tokiwa; Yoshihiko Shindo; Toshiaki Edahiro; Teruhiko Kamei; Hiroaki Nasu; Makoto Iwai; Koji Kato; Yasuyuki Fukuda; Naoaki Kanagawa; Naofumi Abiko; Masahide Matsumoto; Toshihiko Himeno; Toshifumi Hashimoto; Yi-Ching Liu; Hardwell Chibvongodze; Takamitsu Hori; Manabu Sakai; Hong Ding; Yoshiharu Takeuchi; Hitoshi Shiga; Norifumi Kajimura; Yasuyuki Kajitani; Kiyofumi Sakurai; Kosuke Yanagidaira; Toshihiro Suzuki; Yuko Namiki; Tomofumi Fujimura; Man Mui

NAND flash memories are used in digital still cameras, cellular phones, MP3 players and various memory cards. As seen in the growing needs for applications such as solid-state drives and video camcoders, the market demands for larger-capacity storage has continuously increased and NAND Flash memories are enabling a wide range of new applications. In such situations, to achieve larger capacity at low cost per bit, technical improvement in feature-size scaling [1], multi-bit per cell [2,3] and area reduction are essential.


Archive | 2005

Non-volatile memory and method with power-saving read and program-verify operations

Yan Li; Seungpil Lee; Siu Lung Chan


Archive | 2011

Selective Word Line Erase In 3D Non-Volatile Memory

Yingda Dong; Alex Mak; Seungpil Lee; Johann Alsmeier


Archive | 2008

Regulation of Recovery Rates in Charge Pumps

Man Lung Lui; Seungpil Lee; Hao Thai Nguyen


Archive | 2007

Multiple bit line voltages based on distance

Nima Mokhlesi; Dengtao Zhao; Man Mui; Hao Nguyen; Seungpil Lee; Deepak Chandra Sekar; Tapan Samaddar


Archive | 2009

Low Noise Sense Amplifier Array and Method for Nonvolatile Memory

Hao Thai Nguyen; Man Lung Mui; Seungpil Lee


Archive | 2011

High Speed Sense Amplifier Array and Method for Non-Volatile Memory

Hao Thai Nguyen; Man Lung Mui; Seungpil Lee; Fanglin Zhang; Chi-Ming Wang


international solid-state circuits conference | 2009

A 16 Gb 3-Bit Per Cell (X3) NAND Flash Memory on 56 nm Technology With 8 MB/s Write Rate

Yan Li; Seungpil Lee; Yupin Fong; Feng Pan; Tien-Chien Kuo; Jongmin Park; Tapan Samaddar; Hao Thai Nguyen; Man L. Mui; Khin Htoo; Teruhiko Kamei; Masaaki Higashitani; Emilio Yero; Gyuwan Kwon; Phil Kliza; Jun Wan; Tetsuya Kaneko; Hiroshi Maejima; Hitoshi Shiga; Makoto Hamada; Norihiro Fujita; Kazunori Kanebako; Eugene Tam; Anne Koh; Iris Lu; Calvin Chia-Hong Kuo; Trung Pham; Jonathan Huynh; Qui Nguyen; Hardwell Chibvongodze


Archive | 2006

Complete word line look ahead with efficient data latch assignment in non-volatile memory read operations

Man Lung Mui; Seungpil Lee

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