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Dive into the research topics where Hao Nguyen is active.

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Featured researches published by Hao Nguyen.


international solid-state circuits conference | 2012

128Gb 3b/cell NAND flash memory in 19nm technology with 18MB/s write rate and 400Mb/s toggle mode

Yan Li; Seungpil Lee; Ken Oowada; Hao Nguyen; Qui Nguyen; Nima Mokhlesi; Cynthia Hsu; Jason Li; Venky Ramachandra; Teruhiko Kamei; Masaaki Higashitani; Tuan Pham; Mitsuaki Honma; Yoshihisa Watanabe; Kazumi Ino; Binh Le; Byungki Woo; Khin Htoo; Tai-Yuan Tseng; Long Pham; Frank Tsai; Kwang-ho Kim; Yi-Chieh Chen; Min She; Jong Yuh; Alex Chu; Chen Chen; Ruchi Puri; Hung-Szu Lin; Yi-Fang Chen

This paper addresses challenges with improvements made over previous NAND generations to achieve high performance while maintaining a low fail-bit count (FBC) and cost savings from an improved architecture and tightly packed peripheral circuits. Air gap [2,3] technology further improves write throughput by reducing neighbor interference and WL RC. A toggle mode 400Mb/s I/O interface reduces system overhead and enhances overall performance.


international solid-state circuits conference | 2009

A 113mm2 32Gb 3b/cell NAND flash memory

Takuya Futatsuyama; Norihiro Fujita; Naoya Tokiwa; Yoshihiko Shindo; Toshiaki Edahiro; Teruhiko Kamei; Hiroaki Nasu; Makoto Iwai; Koji Kato; Yasuyuki Fukuda; Naoaki Kanagawa; Naofumi Abiko; Masahide Matsumoto; Toshihiko Himeno; Toshifumi Hashimoto; Yi-Ching Liu; Hardwell Chibvongodze; Takamitsu Hori; Manabu Sakai; Hong Ding; Yoshiharu Takeuchi; Hitoshi Shiga; Norifumi Kajimura; Yasuyuki Kajitani; Kiyofumi Sakurai; Kosuke Yanagidaira; Toshihiro Suzuki; Yuko Namiki; Tomofumi Fujimura; Man Mui

NAND flash memories are used in digital still cameras, cellular phones, MP3 players and various memory cards. As seen in the growing needs for applications such as solid-state drives and video camcoders, the market demands for larger-capacity storage has continuously increased and NAND Flash memories are enabling a wide range of new applications. In such situations, to achieve larger capacity at low cost per bit, technical improvement in feature-size scaling [1], multi-bit per cell [2,3] and area reduction are essential.


Archive | 2007

Multiple bit line voltages based on distance

Nima Mokhlesi; Dengtao Zhao; Man Mui; Hao Nguyen; Seungpil Lee; Deepak Chandra Sekar; Tapan Samaddar


Archive | 2012

TEMPERATURE BASED COMPENSATION DURING VERIFY OPERATIONS FOR NON-VOLATILE STORAGE

Ken Oowada; Yingda Dong; Gerrit Jan Hemink; Man Lung Mui; Hao Nguyen; Seungpil Lee; Jong Park; Fanglin Zhang


Archive | 2014

Techniques for programming of select gates in NAND memory

Hao Nguyen; Man Mui; Khanh Nguyen; Seungpil Lee; Toru Ishigaki; Yingda Dong


international solid-state circuits conference | 2018

A 512Gb 3b/Cell 3D flash memory on a 96-word-line-layer technology

Hiroshi Maejima; Kazushige Kanda; Susumu Fujimura; Teruo Takagiwa; Susumu Ozawa; Jumpei Sato; Yoshihiko Shindo; Manabu Sato; Naoaki Kanagawa; Junji Musha; Satoshi Inoue; Katsuaki Sakurai; Naohito Morozumi; Ryo Fukuda; Yuui Shimizu; Toshifumi Hashimoto; Xu Li; Yuuki Shimizu; Kenichi Abe; Tadashi Yasufuku; Takatoshi Minamoto; Hiroshi Yoshihara; Takahiro Yamashita; Kazuhiko Satou; Takahiro Sugimoto; Fumihiro Kono; Mitsuhiro Abe; Tomoharu Hashiguchi; Masatsugu Kojima; Yasuhiro Suematsu


Archive | 2017

Voltage generator to compensate for process corner and temperature variations

Amul Desai; Hao Nguyen; Man Mui; Ohwon Kwon


Archive | 2017

GÉNÉRATEUR DE TENSION DE COMPENSATION DE VARIATIONS D'ANGLE DE TRAITEMENT ET DE TEMPÉRATURE

Amul Desai; Hao Nguyen; Man Mui; Ohwon Kwon


Archive | 2014

Segmentation of blocks for faster bit line settling/recovery in non-volatile memory devices

Amul Desai; Hao Nguyen; Seungpil Lee; Man Mui


Archive | 2012

Compensation basée sur la température pendant des opérations de vérification pour système de stockage non volatil

Ken Oowada; Yingda Dong; Gerrit Jan Hemink; Man Lung Mui; Hao Nguyen; Seungpil Lee; Jong Park; Fanglin Zhang

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