Seyed Majid Homayouni

Technology-Independent Non-Quasi-Static Table-Based Nonlinear Model Generation

An analytical extraction of the non-quasi-static nonlinear lookup table FET model at mm-wave frequencies is demonstrated in this study. Frequency dispersion present at mm-wave frequencies is compensated for by introduction of higher order dynamics of nonlinear constituent components. Nonlinear charge- and current-sources are used as the constituent components to represent the nonlinear device where the higher order charge- and current-sources are introduced to compensate for the non-quasi-static effects. The presented approach is validated using SOI Multi-Fin MOSFET transistors, the multiple gate MOSFET structures which have been introduced as an alternative candidate for bulk planar CMOS technology in the nanometer regime. An accurate multibias linear model is employed as the keystone for building the non-quasi-static nonlinear model. Large-signal measurements are used for model validation. Significant improvements are observed over the quasi-static nonlinear model which is demonstrated by excellent agreement between measurements and nonlinear model presented here.

Evaluation of lookup-table non-quasi-static nonlinear models at microwave and mm-wave frequencies

A comparison between two different, yet analytical approaches for lookup-table large-signal model construction is presented in this study. Both approaches use the same linear (small-signal) model as the starting point to construct the large-signal model. The first nonlinear model employs the charge- and current-sources to represent the nonlinearity of the active part of the device where the extended charge- and current-sources are added to compensate for the non-quasi-static (NQS) effects at mm-wave frequencies. The second nonlinear model employs the small-signal model schematic and adapts it to be used directly for large-signal simulations. The study was performed on SOI multi-Fin MOSFET transistors. Both modeling approaches can reproduce the device behavior at microwave and mm-wave frequencies and under highly nonlinear conditions with good accuracy.