Shang Haiping

A substrate-free optical readout focal plane array with a heat sink structure

A substrate-free optical readout focal plane array (FPA) operating in 8–12 μm with a heat sink structure (HSS) was fabricated and its performance was tested. The temperature distribution of the FPA with an HSS investigated by using a commercial FLIR IR camera shows excellent uniformity. The thermal cross-talk effect existing in traditional substrate-free FPAs was eliminated effectively. The heat sink is fabricated successfully by electroplating copper, which provides high thermal capacity and high thermal conductivity, on the frame of substrate-free FPA. The FPA was tested in the optical-readout system, the results show that the response and NETD are 13.6 grey/K (F / # = 0.8) and 588 mK, respectively.

Adjustment of NiSi/n-Si SBH by post-silicide of dopant segregation process

The post-silicide of dopant segregation process for adjusting NiSi/n-Si SBH (Schottky barrier height) is described. Adopting the analysis of the I–V characteristic curve and extrapolating the SBH of NiSi/n-Si Schottky junction diodes (NiSi/n-Si SJDs), the effects of different of process parameters dopant segregation, including segregation anneal temperature and dopant implant dose, on the properties of the NiSi/n-Si SJDs have been studied, and the corresponding mechanisms are discussed.

Two-step Ni silicide process and influence of protective N2 gas

A two-step process of Ni silicide formed on bulk silicon, and the effects of different process conditions, including two-step RTA temperature and time, selective etching, and process protective nitrogen gas on the properties of the Ni silicide film have been studied. In particular, the experiments show that the quality of NiSi film is very sensitive to the process conditions of the first RTA. The experiments also show that the quality of the film is very sensitive to the flow of protective nitrogen gas. The corresponding mechanisms are discussed.

SBH adjustment characteristic of the dopant segregation process for NiSi/n-Si SJDs

By means of analyzing theI -V characteristic curve of NiSi/n-Si Schottky junction diodes (NiSi/n-Si SJDs), abstracting the effective Schottky barrier height ( B; eff/ and the ideal factor of NiSi/n-Si SJDs and measuring the sheet resistance of NiSi films (RNiSi/, we study the effects of different dopant segregation process parameters, including impurity implantation dose, segregation annealing temperature and segregation annealing time, on the B; eff of NiSi/ n-Si SJDs and the resistance characteristic of NiSi films. In addition, the changing rules of B; eff andRNiSi are discussed.