Shaodong Ma

A hybrid silicon single mode laser with a slotted feedback structure

In this paper, a III-V/Silicon hybrid single mode laser operating at a long wavelength for photonic integration circuit is presented. The InGaAlAs gain structure is bonded onto a patterned silicon-on insulator wafer directly. The novel mode selected mechanism based on a slotted silicon waveguide is applied, which only need standard photolithography in the whole technological process. The side mode suppression ratio of larger than 20dB is obtained from experiments.

Hybrid III–V-silicon single-mode laser with periodic microstructures

In this Letter, a III-V/silicon hybrid single-mode laser operating at C band for photonic integration circuit is presented. The InGaAlAs gain structure is bonded onto a patterned silicon-on insulator through wafer to wafer directly. The mode selected mechanism based on a hybrid III-V/silicon straight cavity with periodic microstructures is applied, which only need low cost i-line projection photolithography in the whole technological process. At room temperature, we obtain 0.62 mW output power in continuous-wave. The side mode suppression ratio of larger than 20 dB is obtained from experiments. [corrected].

High-brightness diode laser arrays integrated with a phase shifter designed for single-lobe far-field pattern.

High-brightness 910 nm wavelength edge-emitting laser arrays integrated with a phase-shifter have been designed. Over 450 mW/facet with M2 <; 3 is achieved experimentally. Such devices show bright future for low cost and easy fabrication.

High-brightness laser arrays integrated with a phase-shifter designed for single-lobe far-field pattern

High-brightness 910 nm wavelength edge-emitting laser arrays integrated with a phase-shifter have been designed. Over 450 mW/facet with M2 < 3 is achieved experimentally. Such devices show bright future for low cost and easy fabrication.