Shelby Lacouture

Haptic controlled three-axis MEMS gripper system

In this work, we describe the development and testing of a three degree of freedom meso/micromanipulation system for handling micro-objects, including biological cells and microbeads. Three-axis control is obtained using stepper motors coupled to micromanipulators. The test specimen is placed on a linear X-stage, which is coupled to one stepper motor. The remaining two stepper motors are coupled to the Y and Z axes of a micromanipulator. The stepper motor-micromanipulator arrangement in the Y and Z axes has a minimum step resolution of ∼0.4 μm with a total travel of 12 mm and the stepper motor-X stage arrangement has a minimum resolution of ∼0.3 μm with a total travel of 10 mm. Mechanical backlash error is ∼0.8 μm for ∼750 μm of travel. A MEMS microgripper from Femtotools™ acts as an end-effector in the shaft end of the micromanipulator. The gripping ranges of the grippers used are 0-100 μm (for FT-G100) and 0-60 μm (for FT-G60). As the gripping action is performed, the force sense circuit of FT-G100 measures the handling force. This force feedback is integrated to a commercially available three degree of freedom haptic device (Novint Falcon) allowing the user to receive tactile feedback during the microscale handling. Both mesoscale and microscale controls are important, as mesoscale control is required for the travel motion of the test object whereas microscale control is required for the gripping action. The haptic device is used to control the position of the microgripper, control the actuation of the microgripper, and provide force feedback. A LABVIEW program was developed to interlink communication and control among hardware used in the system. Micro-objects such as SF-9 cells and polystyrene beads (∼45 μm) are handled and handling forces of ∼50 μN were experienced.

Safe Operating Area and Long-Term Reliability of 9-kV Silicon Carbide PNPN Super Gate Turn-Off Thyristors

One of the major requirements for adoption of new silicon carbide (SiC) super gate turn-off thyristors (SGTOs) into high-energy applications is to verify the safe operating area and long-term reliability capabilities of these devices. In this letter, we have developed a unique high-energy testing system that can evaluate the performance limitations with respect to lifetime capabilities of the 9 kV, 1 cm2, SGTOs at ultrahigh pulsed current levels from 1 to 3.5 kA. The test system produces square current pulses with a user specified current amplitude and a 100-μs pulsewidth at a maximum repetition rate of 1 shot/s (>0.1% duty cycle). A lifetime safe operating area with respect to maximum pulsed current was then established that these 1 cm2, 9 kV, SiC SGTOs can perform reliably without significant degradation at pulsed current levels up to 2.0 kA. At current levels above 2.0 kA shifts in the on-state voltage are observed probably due to device over-heating at such high current levels and having not enough time to fully dissipate the heat between any two shots, which results in the device rapidly deteriorating due to increased on-state losses ultimately leading to premature failure.

Automated modular high energy evaluation system for experimental thyristor devices

A high energy, modular, completely automated test bed with integrated data acquisition and characterization systems was successfully designed in order to perform both safe operating area as well as very high volume reliability testing on experimental silicon carbide Super Gate Turn Off (SGTO) thyristors. Although the system follows a modular design philosophy, with each functional block acting as a peripheral to a main control module and can be adapted to arbitrary power and pulse width levels, for the specific SGTO devices initially evaluated it was configured to have the device discharge variable current levels of up to 6 kA into a 0.5 Ω resistive load with a relatively square pulse fixed at 100 μs full width at half maximum delivering energy levels up to 1.8 kJ to the load.

Evaluation of experimental Silicon SGTO devices for Pulsed Power applications

The development of new semiconductor devices requires that extensive testing be completed in order to fully understand the device characteristics and performance capabilities. This paper describes the evaluation of experimental Silicon high power Super Gate Turn Off Thyristors (Si SGTOs) in a unique testing environment. The SGTOs are capable of blocking in the forward direction up to 5kV and are also capable of handling several kA when pulsed. The device structure is asymmetric so the reverse blocking of these devices is only a couple hundred volts. Since these devices are SGTOs special consideration had to be given to the gate trigger circuit so that noise would be minimized on the gate therefore preventing false triggering of the devices.

Analysis of GaN power MOSFET exporsure to pulsed overcurrents

The advancement of wide bandgap semiconductor materials has led to the development of Gallium Nitride (GaN) power semiconductor devices, specifically GaN Power MOSFETs. GaN devices have improved characteristics in carrier mobility and on-state resistance compared to Silicon solid state switches. With the development of these new power semiconductor devices a need was established to understand the behavior of the devices switching performance under stress, with regards to situations in pulsing circuits. Through the examination of the switching characteristics of GaN devices, the results can be used for the improvement of advanced pulsing circuit design with GaN solid state switches. In this paper the authors develop a test bed to expose the GaN Power MOSFETs to single and repetitive pulsed overcurrents. The test bed was developed using a Pulse Ring Down board in a radially symmetric configuration to minimize the total equivalent inductance and resistance. The test bed switches the GaN MOSFET with low impedance between the DC bus and ground to induce the stress the MOSFET experiences during pulsed overcurrents. The DC characteristics were measured between switching sets to reveal characteristic signs of potential degradation and failure modes due to pulsed overcurrents. The single and repetitive pulse switching characteristics are captured, analyzed, and shown.

An evaluation system for experimental silicon and silicon carbide super gate turn off thyristors

This paper describes the design and implementation of a small-scale pulsed power system specifically intended to evaluate the suitability of experimental silicon and silicon carbide high power Super Gate Turn Off thyristors for high action (500 A(2) s and above) pulsed power applications where energy is extracted from a storage element in a rapid and controlled manner. To this end, six of each type of device was placed in a controlled three phase rectifier circuit which was in turn connected to an aircraft ground power motor-generator set and subjected to testing protocols with varying power levels, while parameters such as offset firing angle were varied.

Design of an advanced modular automated evaluation system for experimental high power SGTOs

An advanced evaluation system for experimental high power Super Gate Turn Off Thyristors (SGTOs) with built - in custom data acquisition and characterization electronics was designed and built in a cooperative agreement between engineers at Texas Tech Universitys Center for Pulsed Power and Power electronics (P3 E) laboratory and research scientists at Army Research Lab (ARL). The system consist of a Pulse Forming Network (PFN) energized by a rapid capacitor charger, a data acquisition system which records chosen waveforms for each test cycle and a curve tracing module which the test devices are mechanically switched into to record current and voltage characteristics at arbitrary intervals between high power cycles. Testing is completely automated, with all test parameters including charge level, repetition rate, volume, etc. set within a windows based GUI. The evaluation system has successfully recorded changing I - V characteristics before actual physical failure in several devices. Extremely high volume testing has also been carried out with one device having been cycled over 42,000 times at moderate (2.5 kA) conduction levels.

Analysis of carrier lifetime effects on HV SIC PiN diodes at elevated pulsed switching conditions

Future Army power systems will require utilizing high-power and high-voltage SiC devices in order to meet size, weight, volume, and high power density for fast switching requirements at both component and system levels. This paper presents the modeling and simulation of a high voltage (>12kV) silicon carbide PiN diode for high action pulsed power applications. A model of a high power PiN diode was developed in the Silvaco Atlas software to better understand the extreme electrical stresses in the power diode when subjected to a high-current pulse. The impact of carrier lifetime on pulsed switching performance of silicon carbide (SiC) PiN diode was investigated.

Large chip area SiC PiN diodes demonstrated for thyristor protection in a pulsed system

Asymmetric thyristors require protection from voltage and current reversals in high-inductance capacitor discharge systems. Silicon carbide (SiC) PiN diodes capable of blocking up to 16 kV were demonstrated to have the high-current capability to transmit forward pulse current in a series configuration with a thyristor, and to clamp reverse current in an anti-parallel configuration. In series with a thyristor, diodes were switched 1000 pulses at a single-shot rate at 2000 A peak current (3.8 kA/cm2 over anode area and 2100 A2s per pulse) without any notable increases in forward voltage or reverse leakage current. In the reverse clamp configuration, a parallel pair of PiN diodes was demonstrated to block 12 kV charge on the capacitor bank, then clamp a total of 4200 A current reversal with good parallel current sharing. These evaluations demonstrate that for high current density pulsing above 10 kV, individual 16 kV PiN diodes yield lower on-state voltage loss (16 V at 2000 A) than series-stacked assemblies of 9 kV SiC PiN diodes or 6 kV Si diodes.

Evaluation of High Power Experimental SiC SGTO Devices for Pulsed Power Applications

The development of new semiconductor designs requires that extensive testing be completed in order to fully understand the device’s characteristics and performance capabilities. This paper describes the evaluation of experimental Silicon Carbide high power Super Gate Turn Off Thyristors (SiC SGTOs) in a unique test bed that is capable of stressing the devices with very high energy/power levels while at the same time mimicking a realistic, real world application for such devices.