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石橋 恵二

Sumitomo Electric Industries

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Publication

Featured researches published by 石橋 恵二.

Archive | 2010

Group-iii nitride crystal substrate, group-iii nitride crystal substrate with epitaxial layer, semiconductor device, and method for manufacturing same

Keiji Ishibashi; 石橋 恵二; Yusuke Yoshizumi; 祐介 善積

Archive | 2004

BONDING TOOL FOR ULTRASONIC BONDING

Akifumi Fujioka; Keiji Ishibashi; Tetsuo Nakai; Yuichiro Seki; Kazuko Yamamoto; 中井 哲男; 山本 佳津子; 石橋 恵二; 藤岡 昭文; 関 裕一郎

Archive | 2013

Silicon carbide substrate, semiconductor device and methods for producing same

Keiji Ishibashi; 石橋 恵二

Archive | 2012

Silicon carbide substrate, semiconductor device, method for producing silicon carbide substrate, and method for manufacturing semiconductor device

Keiji Ishibashi; 石橋 恵二

Archive | 2010

Polishing agent, method for producing compound semiconductor, and method for manufacturing semiconductor device

Keiji Ishibashi; 石橋 恵二; Masashi Futamura; 真史 二村; Takayuki Nishiura; 隆幸 西浦

Archive | 2017

ＩＩＩ族窒化物複合基板およびその製造方法、積層ＩＩＩ族窒化物複合基板、ならびにＩＩＩ族窒化物半導体デバイスおよびその製造方法

石橋 恵二; 八郷 昭広; 廣村 友紀; 松本 直樹; 中畑 成二; 中西 文毅; 善積 祐介; 三上 英則

Archive | 2016

Silicon carbide substrate

石橋 恵二; 恵二 石橋

Archive | 2015

ＩＩＩ族窒化物結晶およびその表面処理方法、ＩＩＩ族窒化物積層体およびその製造方法、ならびにＩＩＩ族窒化物半導体デバイスおよびその製造方法

石橋 恵二; 松本 直樹; 入倉 正登

Archive | 2015

Silicon carbide substrate, semiconductor device, and method for manufacturing them

石橋 恵二; Keiji Ishibashi; 恵二 石橋

Archive | 2015

Substrate, a semiconductor device and a method for their preparation

石橋 恵二; 恵二 石橋

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Keiji Ishibashi

Sumitomo Electric Industries

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Yusuke Yoshizumi

Sumitomo Electric Industries

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祐介 善積

Sumitomo Electric Industries

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松本 直樹

Tokyo Electron

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Fumitake Nakanishi

Sumitomo Electric Industries

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Kosuke Uchida

Sumitomo Electric Industries

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Masashi Futamura

Sumitomo Electric Industries

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Shunsaku Ueta

Sumitomo Electric Industries

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Takayuki Nishiura

Sumitomo Electric Industries

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Tomoki Uemura

Osaka University

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