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Dive into the research topics where Shibly S. Ahmed is active.

Publication


Featured researches published by Shibly S. Ahmed.


symposium on vlsi technology | 2003

Strained silicon NMOS with nickel-silicide metal gate

Qi Xiang; Jung-Suk Goo; James Pan; Bin Yu; Shibly S. Ahmed; John Zhang; Ming-Ren Lin

Strained Si NMOS transistors with Lgate down to 35 nm were fabricated using NiSi as a metal gate electrode material for the first time. Compared to poly gate devices, NiSi metal gate devices showed further enhanced performance with good control of short channel effects and no degradation in gate oxide integrity.


international electron devices meeting | 2002

FinFET scaling to 10 nm gate length

Bin Yu; Leland Chang; Shibly S. Ahmed; Haihong Wang; Scott Bell; Chih-Yuh Yang; Cyrus E. Santa Clare Tabery; Chau Ho; Qi Xiang; Tsu-Jae King; Jeffrey Bokor; Chenming Hu; Ming-Ren Lin; David Kyser


Archive | 2003

Double gate semiconductor device having separate gates

Shibly S. Ahmed; HaiHong Wang; Bin Yu


Archive | 2002

Semiconductor device having a U-shaped gate structure

Bin Yu; Shibly S. Ahmed; Judy Xilin An; Srikanteswara Dakshina-Murthy; Zoran Krivokapic; Haihong Wang


Archive | 2002

Method for forming a gate in a FinFET device

Chih-Yuh Yang; Shibly S. Ahmed; Srikanteswara Dakshina-Murthy; Cyrus E. Tabery; HaiHong Wang; Bin Yu


Archive | 2004

Multi-step chemical mechanical polishing of a gate area in a finfet

Krishnashree Achuthan; Shibly S. Ahmed; HaiHong Wang; Bin Yu


Archive | 2002

Damascene gate process with sacrificial oxide in semiconductor devices

Shibly S. Ahmed; HaiHong Wang; Bin Yu


Archive | 2003

Planarizing gate material to improve gate critical dimension in semiconductor devices

Shibly S. Ahmed; Cyrus E. Santa Clare Tabery; Haihong Wang; Bin Yu


Archive | 2003

Double gate semiconductor device having a metal gate

Shibly S. Ahmed; HaiHong Wang; Bin Yu


Archive | 2003

Systems and methods for forming dense n-channel and p-channel fins using shadow implanting

Wiley Eugene Hill; Shibly S. Ahmed; HaiHong Wang; Bin Yu

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Bin Yu

Advanced Micro Devices

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Haihong Wang

University of California

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