Shih-Ming Lin

Protein micro arrays immobilized by μ-stamps and -protein wells on PhastGel® pad

This paper reports a novel stamping system, employing μ-stamps and -protein wells to simultaneously transfer proteins onto an array without de-naturalization, cross-contamination, and de-attachment of the proteins. The μ-stamps and -protein wells were successfully fabricated by micro machining and micro molding process. The effect of surface properties of μ-stamp on micro printing has been studied, and results demonstrated the feasibility of printing protein arrays with spot-size of 350 m square and pitch of 100 m. Testing results show that each stamped protein sample can be clearly identified with uniform deposition, and lasts for 6 h under water washing without appreciable de-attachment. This method may be used to transfer numerous different protein samples with the help of pre-filled μ-protein wells.

Single-Step Formation of ZnO/ZnWOx Bilayer Structure via Interfacial Engineering for High Performance and Low Energy Consumption Resistive Memory with Controllable High Resistance States

A spontaneously formed ZnO/ZnWOx bilayer resistive memory via an interfacial engineering by one-step sputtering process with controllable high resistance states was demonstrated. The detailed formation mechanism and microstructure of the ZnWOx layer was explored by X-ray photoemission spectroscopy (XPS) and transmission electron microscope in detail. The reduced trapping depths from 0.46 to 0.29 eV were found after formation of ZnWOx layer, resulting in an asymmetric I-V behavior. In particular, the reduction of compliance current significantly reduces the switching current to reach the stable operation of device, enabling less energy consumption. Furthermore, we demonstrated an excellent performance of the complementary resistive switching (CRS) based on the ZnO/ZnWOx bilayer structure with DC endurance >200 cycles for a possible application in three-dimensional multilayer stacking.

Tunable Multilevel Storage of Complementary Resistive Switching on Single-Step Formation of ZnO/ZnWOx Bilayer Structure via Interfacial Engineering

Tunable multilevel storage of complementary resistive switching (CRS) on single-step formation of ZnO/ZnWOx bilayer structure via interfacial engineering was demonstrated for the first time. In addition, the performance of the ZnO/ZnWOx-based CRS device with the voltage- and current-sweep modes was demonstrated and investigated in detail. The resistance switching behaviors of the ZnO/ZnWOx bilayer ReRAM with adjustable RESET-stop voltages was explained using an electrochemical redox reaction model whose electron-hopping activation energies of 28, 40, and 133 meV can be obtained from Arrhenius equation at RESET-stop voltages of 1.0, 1.3, and 1.5 V, respectively. In the case of the voltage-sweep operation on the ZnO-based CRS device, the maximum array numbers (N) of 9, 15, and 31 at RESET-stop voltages of 1.4, 1.5, and 1.6 V were estimated, while the maximum array numbers increase into 47, 63, and 105 at RESET-stop voltages of 2.0, 2.2, and 2.4 V, operated by the current-sweep mode, respectively. In addition, the endurance tests show a very stable multilevel operation at each RESET-stop voltage under the current-sweep mode.

Dual-Protein Micro Arrays Deposited by µ-Stamps and µ-Wells

This paper reports a novel protein stamping mean, employing µ-stamps and protein wells to simultaneously transfer various proteins onto an array. Testing results have shown that each stamped protein sample can be clearly identified with uniform deposition, within 7% size and 5% gray level variation. This method can be applied for high-throughput disease diagnosis and drug screening.