Chih-Chung Lai

Manipulated Transformation of Filamentary and Homogeneous Resistive Switching on ZnO Thin Film Memristor with Controllable Multistate

A bias polarity-manipulated transformation from filamentary to homogeneous resistive switching was demonstrated on a Pt/ZnO thin film/Pt device. Two types of switching behaviors, exhibiting different resistive switching characteristics and memory performances were investigated in detail. The detailed transformation mechanisms are systematically proposed. By controlling different compliance currents and RESET-stop voltages, controllable multistate resistances in low resistance states and a high resistance states in the ZnO thin film metal-insulator-metal structure under the homogeneous resistive switching were demonstrated. We believe that findings would open up opportunities to explore the resistive switching mechanisms and performance memristor with multistate storage.

Single CuOx Nanowire Memristor: Forming-Free Resistive Switching Behavior

CuOx nanowires were synthesized by a low-cost and large-scale electrochemical process with AAO membranes at room temperature and its resistive switching has been demonstrated. The switching characteristic exhibits forming-free and low electric-field switching operation due to coexistence of significant amount of defects and Cu nanocrystals in the partially oxidized nanowires. The detailed resistive switching characteristics of CuOx nanowire systems have been investigated and possible switching mechanisms are systematically proposed based on the microstructural and chemical analysis via transmission electron microscopy.

Non-antireflective Scheme for Efficiency Enhancement of Cu(In,Ga)Se2 Nanotip Array Solar Cells

We present systematic works in characterization of CIGS nanotip arrays (CIGS NTRs). CIGS NTRs are obtained by a one-step ion-milling process by a direct-sputtering process of CIGS thin films (CIGS TF) without a postselenization process. At the surface of CIGS NTRs, a region extending to 100 nm in depth with a lower copper concentration compared to that of CIGS TF has been discovered. After KCN washing, removal of secondary phases can be achieved and a layer with abundant copper vacancy (V(Cu)) was left. Such compositional changes can be a benefit for a CIGS solar cell by promoting formation of Cd-occupied Cu sites (Cd(Cu)) at the CdS/CIGS interface and creates a type-inversion layer to enhance interface passivation and carrier extraction. The raised V(Cu) concentration and enhanced Cd diffusion in CIGS NTRs have been verified by energy dispersive spectrometry. Strengthened adhesion of Al:ZnO (AZO) thin film on CIGS NTRs capped with CdS has also been observed in SEM images and can explain the suppressed series resistance of the device with CIGS NTRs. Those improvements in electrical characteristics are the main factors for efficiency enhancement rather than antireflection.

RuO2/MnO2 core–shell nanorods for supercapacitors

RuO2/MnO2 NRs as an electrode for supercapacitors show a high electrochemical performance with a specific capacitance of 793 F g−1 (based on MnO2) by cyclic voltammetry (CV) at a scan rate of 2 mV s−1 in 1 M Na2SO4 aqueous solution. A good rate capability with a specific capacitance of 556 F g−1 at a current density of 1 A g−1 and a good cycling stability (20% degradation after 1000 cycles) were also achieved. The enhancement of capacitive behavior can be attributed to the conductive RuO2 template with a series resistance of 0.75 Ω and a charge transfer resistance of 0.75 Ω. The results show that an active material such as a MnO2 hybrid with highly conductive 1D nanowires may greatly improve the electrochemical performance for supercapacitors.

Improved Efficiency of a Large-Area Cu(In,Ga)Se2 Solar Cell by a Nontoxic Hydrogen-Assisted Solid Se Vapor Selenization Process

A nontoxic hydrogen-assisted solid Se vapor selenization process (HASVS) technique to achieve a large-area (40 × 30 cm(2)) Cu(In,Ga)Se2 (CIGS) solar panel with enhanced efficiencies from 7.1 to 10.8% (12.0% for active area) was demonstrated. The remarkable improvement of efficiency and fill factor comes from improved open circuit voltage (Voc) and reduced dark current due to (1) decreased interface recombination raised from the formation of a widened buried homojunction with n-type Cd(Cu) participation and (2) enhanced separation of electron and hole carriers resulting from the accumulation of Na atoms on the surface of the CIGS film. The effects of microstructural, compositional, and electrical characteristics with hydrogen-assisted Se vapor selenization, including interdiffusion of atoms and formation of buried homojunction, were examined in detail. This methodology can be also applied to CIS (CuInSe2) thin film solar cells with enhanced efficiencies from 5.3% to 8.5% (9.4% for active area) and provides a facile approach to improve quality of CIGS and stimulate the nontoxic progress in the large scale CIGS PV industry.

A solar-thermal energy harvesting scheme: enhanced heat capacity of molten HITEC salt mixed with Sn/SiOx core–shell nanoparticles

We demonstrated enhanced solar-thermal storage by releasing the latent heat of Sn/SiO(x) core-shell nanoparticles (NPs) embedded in a eutectic salt. The microstructures and chemical compositions of Sn/SiO(x) core-shell NPs were characterized. In situ heating XRD provides dynamic crystalline information about the Sn/SiO(x) core-shell NPs during cyclic heating processes. The latent heat of ∼29 J g(-1) for Sn/SiO(x) core-shell NPs was measured, and 30% enhanced heat capacity was achieved from 1.57 to 2.03 J g(-1) K(-1) for the HITEC solar salt without and with, respectively, a mixture of 5% Sn/SiO(x) core-shell NPs. In addition, an endurance cycle test was performed to prove a stable operation in practical applications. The approach provides a method to enhance energy storage in solar-thermal power plants.

Plasma-Assisted Synthesis of High-Mobility Atomically Layered Violet Phosphorus

Two-dimensional layered materials such as graphene, transition metal dichalcogenides, and black phosphorus have demonstrated outstanding properties due to electron confinement as the thickness is reduced to atomic scale. Among the phosphorus allotropes, black phosphorus, and violet phosphorus possess layer structure with the potential to be scaled down to atomically thin film. For the first time, the plasma-assisted synthesis of atomically layered violet phosphorus has been achieved. Material characterization supports the formation of violet phosphorus/InN over InP substrate where the layer structure of violet phosphorus is clearly observed. The identification of the crystal structure and lattice constant ratifies the formation of violet phosphorus indeed. The critical concept of this synthesis method is the selective reaction induced by different variations of Gibbs free energy (ΔG) of reactions. Besides, the Hall mobility of the violet phosphorus on the InP substrate greatly increases over the theoretical values of InP bulk material without much reduction in the carrier concentration, suggesting that the mobility enhancement results from the violet phosphorus layers. Furthermore, this study demonstrates a low-cost technique with high compatibility to synthesize the high-mobility atomically layered violet phosphorus and open the space for the study of the fundamental properties of this intriguing material as a new member of the fast growing family of 2D crystals.

Roles of oxygen and nitrogen in control of nonlinear resistive behaviors via filamentary and homogeneous switching in an oxynitride thin film memristor

A TiOxNy thin film, which contains controllable concentrations of oxygen and nitrogen by a single-step reactive sputtering process using a non-symmetric Pt electrode as top electrode and TiN as bottom electrode, exhibiting non-linear I–V behavior, was proposed and demonstrated. A switching model of the non-linear I–V switching was built based on diffusion of oxygen vacancies in the TiOxNy film with different ratios of O and N after the SET process. Effects on the switching relationship between TiOxNy and electrodes were investigated to optimize the best conditions for the non-linear behavior. The origin of the nonlinear property was investigated in detail by changing the compositions of oxygen and nitrogen in the TiOxNy thin film. We believe that these findings would open up opportunities to exploit resistive switching mechanisms and simple memristor stacking in next generation crossbar array applications.

ZnO nanoparticle-decorated HfO2/Sn-doped In2O3 core–shell nanowires by atomic layer deposition: enhancement of field emission behavior by surface modification engineering

Enhanced field emission properties of Sn-doped In2O3 (ITO) nanowires (NWs) after the formation of a heterostructure core–shell configuration, namely ZnO nanoparticle-decorated HfO2/Sn-doped ITO NWs, by the atomic layer deposition (ALD) process were reported and investigated in detail. Island growth of a ZnO layer on the ITO NWs, with a low density, after the ALD process was observed while for the growth of the ZnO layer on the HfO2/ITO core–shell NWs, a ZnO layer with very tiny nanoparticles (NPs) can be achieved along the axial direction throughout the whole nanowire. A turn-on field of ∼10.8 eV with a field enhancement factor (β) of 409 can be found for the ITO NWs while the turn-on field decreases from 10.8 to 6 V μm−1 with an increase in the field enhancement factor (β) from 409 to 753 after the ZnO nanoparticle growth on the ITO NW. By combining the two materials utilizing surface modification engineering, a highly dense ZnO NP decorated on HfO2/ITO core–shell NWs can be achieved, resulting in a significant reduction of the turn-on field to 3.7 V μm−1 with an excellent field enhancement factor of 1677. The findings provide an effective way of improving the field emission properties for nanodevice applications.